DATA SH EET
Product data sheet
Supersedes data of 1997 Jun 16
1999 May 21
DISCRETE SEMICONDUCTORS
PZTA42
NPN high-voltage transistor
db
ook, halfpage
M3D087
1999 May 21 2
NXP Semiconductors Product data sheet
NPN high-voltage transistor PZTA42
FEATURES
•Low current (ma x. 10 0 mA)
•High voltage (max. 300 V).
APPLICATIONS
•Telephony and p rofessional communica tion equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT223 plastic package.
PNP complement: PZTA92.
PINNING
PIN DESCRIPTION
1base
2,4 collector
3emitter
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
123
MAM287
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating S ystem (IEC 134).
Note
1. Device mounted on a pr inted-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Ther mal c onsiderations for SOT223 in the Gen eral Part of associated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −300 V
VCEO collector-emitter voltage open base −300 V
VEBO emitter-base vo ltage open collector −6 V
ICcollector current (DC) −100 mA
ICM peak collector current −200 mA
IBM peak base current −100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −1.2 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 May 21 3
NXP Semiconductors Pr oduct data sheet
NPN high-voltage transistor PZTA42
THERMAL CHARACTE RISTICS
Note
1. Device mounted on a pr inted-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Ther mal c onsiderations for SOT223 in the Gen eral Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 104 K/W
Rth j-s thermal resistance from junction to soldering point 23 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 200 V −20 nA
IEBO emitter cut-off current IC = 0; VBE = 6 V −100 nA
hFE DC current gain VCE = 10 V
IC = 1 mA 25 −
IC = 10 mA 40 −
IC = 30 mA 40 −
VCEsat collector-emitter saturation
voltage IC = 20 mA; IB = 2 mA −500 mV
VBEsat base-emitt er saturatio n voltage IC = 20 mA; IB = 2 mA −900 mV
Cre feedback capacitance IC = ic = 0; VCB = 20 V; f = 1 MHz −3pF
fTtransition freque ncy IC = 10 mA; VCE = 20 V; f = 100 MHz 50 −MHz
1999 May 21 4
NXP Semiconductors Pr oduct data sheet
NPN high-voltage transistor PZTA42
PACKAGE OUTLINE
UNIT A1bpcDEe1HELpQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 97-02-28
99-09-13
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
P
lastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22
3
1999 May 21 5
NXP Semiconductors Pr oduct data sheet
NPN high-voltage transistor PZTA42
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s ) described in this do cument may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the produc t s pecification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such informa tio n.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to informa tion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereo f.
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not designed, au thorized or warran ted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any incons istency or conflict between information
in this document an d such terms and conditio ns, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for accept ance or the grant, conveyance or
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other industr i al or inte llectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document does not fo rm p art o f an y q uot ation or co ntract, is believed to be accurate a nd reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other ind ustrial or intellectual property right s.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the tech nical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands 115002/00/03/pp6 Date of releas e: 1999 May 21 Document orde r number: 9397 750 05939
