OPTDELECTRONICS PACKAGE DIMENSIONS | HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 The H11DxX is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. High voltage H11D1-D2, BVcer=300 V H11D3, BVcea=200 V @ High isolation voltage 5300 VAC RMS1 minute 7500 VAC PEAK1 minute @ Minimum current transfer ratio of H11D1, H11D2, H11D320% @ Underwriters Laboratory (UL) recognized File #E90700 Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls 040 DIMENSIONS IN mm PACKAGE CODE K STI603A AnoDe(1| BASE caTH(2 s|coL, Lae B lem. TOTAL PACKAGE Storage temperature .............. 55C to 150C Operating temperature ............ 55C to 100C Lead temperature (soldering, 10 sec) .................0 000. 260C Total package power dissipation at 25C (LED plus detector) ................... 260 mW Derate linearly from 25C ............... 3.5 mw/C INPUT DIODE Forward DC current ..........0.. 00 eee eee 60 mA Reverse voltage .......... 0... eee eee 6V Peak forward current (1 ws pulse, 300 pps) ..............-2.0005 3.0A Power dissipation 25C ambient .........-. 100 mw Derate linearly from 25C ............... 1.8 mw/Cc OUTPUT TRANSISTOR Power dissipation at 25C ................ 300 mW Derate linearly from 25C ............... 4.0 mW/C H11D1-D2. H11D3 Veen cee eee eee ee eee 300V ... 200V VeBO cette cece ees 300V_... 200V VicO vette n eee ete ees 6V 6vV Collector current (continuous). 100 mA 100 mAeS HIGH-VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS i ~ CHARACTERISTIC SYMBOL MIN. TEST CONDITIONS INPUT DIODE Forward voltage VE | 1.50 Vv I=10mA Forward voltage temp. AV, coefficient aT, 1.8 mv/C Reverse breakdown voltage Va 3.0 25 V In=10 pA Junction capacitance Cc, 50 pF V.=0 V, f=1 MHz 65 pF V-=1V, f=1 MHz Reverse leakage current ln 0.35 10 BA Va=3.0 V OUTPUT TRANSISTOR Breakdown voltage Collector to emitter BV cen H11D1, H11D2, 300 Vv Ik=1 mA; I|-=0, H11D3 200 Vv Rae=1 meg Collector to base BV ceo H11D1, H11D2, 300 Vv I;=100 wA; =O H11D3 200 Vv Emitter to base BV exo 5 7 Vv le=100 pA, |-=0 Leakage current Collector to emitter | (Rec=1 meg.) CER H11D1, H11D2, 100 nA Voce=200V; |-=0; T,=25C 250 BA Voe=200V; |-=0; T,= 100C H11D3 loen 100 nA Voe=100V; |-=0; T,=25C 250 pA Voe= 100V; |-=0; T,=100C SYMBOL = TYP. MAX. UNITS TEST CONDITIONS {ANSFER CH DC CHARACTERISTICS Current Transfer Ratio, collector to emitter CTR p=10 MA; Ve =10V H11D1, H11D2, H11D3 20 % Ree=1 meg Saturation voltage Veesan 0.1 40 Vv l=10 mA; l=0.5 mA Ree=1 meg eee Paeiet e : cee : Jee : : . SYMBOL MIN. TYP. MAX. UNITS TEST CONDITIONS ISFER CHAF CHARACTERISTICS SWITCHING TIMES Non-saturated Turn-on ton 5 BS Vee=10V, loe=2mA, Turn-off time tort 5 BS L=1000 CHARACTERISTICS SYMBOL |. 5 . TEST CONDITIONS Isolation voltage Viso loS1 BA, 1 minute Viso los BA, 4 minute Isolation resistance Riso V.0=500 VDC Isolation capacitance Ciso . f=1 MHz& HIGH-VOLTAGE OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS VcE=10 VOLTS, I=10mA IMM, Ta=25C Vce=10 VOLTS IF=1OmMA Ree=1 meg IcER--NORMALIZED OUTPUT CURRENT IcERNORMALIZED OUTPUT CURRENT 85 -40 -20 0 +20 +40 +60 +80+100 1 2 4 6810 20 40 60.80 100 TaAMBIENT TEMPERATURE C IFINPUT CURRENTmA C1770 C1771 Fig. 1. Output Current vs. input Current Fig. 2. Output Current vs. Temperature 1.4 ke oO z 10 5 LL ce Oo 13 1 x = T = -58C | a 3 > 42 1 a 5 | La & 1 uu Ln > Cou 7 ~ 425 La! 5 5 | a N Z 10 Let | _ 3 4 a T=+100C 1 << x Law le 2 a "1 {5} ra 10 VOL = 09 o VE oo lrF=10mA & iT 2 Oo 3 L 1meg re 0.8 Lj o 01 0.102 05 1 2 5 10 20 50 100 .01 J 1 10 100 = 1000 FORWARD CURRENT Ir (mA) VceCOLLECTOR TO EMITTER VOLTAGEVOLTS C1686 C1773 Fig. 3. Input Characteristics Fig. 4. Output Characteristics 800 700 600 500 400 300 Vce=200 VOLTS tF=0 Ree=1 meg Ta=+25C 200 100 icER-NORMALIZED DARK CURRENT IcBno--COLLECTOR BASE CURRENT nA +75 = +100 = +125 50 -25 QO +25 +50 +75 +100 TaAMBIENT TEMPERATURE* C TaAMBIENT TEMPERATURE GC C1774 C1775 Fig. 5. Normalized Dark Current vs. Temperature Fig. 6. Collector Base Current vs. Temperature 1-89