DATA SHEET BCY58, VII, VIII, IX, X BCY59, VII, VIII, IX, X NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BCY58, BCY59 Series types are Silicon NPN Epitaxial Planar Transistors, mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications. MAXIMUM RATINGS (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Collector Current (Peak) ICM Base Current (Peak) IBM Power Dissipation PD Power Dissipation(TC=25C) PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance JA Thermal Resistance JC BCY58 32 32 SYMBOL hFE hFE hFE hFE TEST CONDITIONS VCE=5.0V, IC=10A VCE=5.0V, IC=2.0mA VCE=1.0V, IC=10mA VCE=1.0V, IC=100mA UNITS V V V mA mA mA mW W 7.0 100 200 200 340 1.0 ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS ICBO VCB= Rated VCBO ICBO VCB= Rated VCBO, TA=150C IEBO VEB=5.0V BVCBO IC=10A (BCY58) BVCBO IC=10A (BCY59) BVCEO IC=2.0mA (BCY58) BVCEO IC=2.0mA (BCY59) BVEBO IE=1.0A VCE(SAT) IC=10mA, IB=250A VCE(SAT) IC=100mA, IB=2.5mA VBE(SAT) IC=10mA, IB=250A VBE(SAT) IC=100mA, IB=2.5mA BCY58-VII BCY59-VII MIN MAX 20 TYP 120 220 80 40 BCY59 45 45 BCY58-VIII BCY59-VIII MIN MAX 20 180 310 120 400 45 -65 to +200 450 C C/W 150 C/W MIN MAX 10 10 10 32 45 32 45 7.0 0.60 0.75 0.35 0.70 0.85 1.20 BCY58-IX BCY59-IX MIN MAX 40 250 460 160 630 60 BCY58-X BCY59-X MIN MAX 100 380 630 240 1000 60 UNITS nA A nA V V V V V V V V V (SEE REVERSE SIDE) R1 BCY58/BCY59 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS Continued SYMBOL fT Cob Cib NF ton td tr toff ts tf ton td tr toff ts tf TEST CONDITIONS VCE=5.0V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=200A, RS=2k, f=1.0kHz, B=200Hz VCC=10V, IC=10mA, IB1=-IB2=1.0mA VCC=10V, IC=10mA, IB1=-IB2=1.0mA VCC=10V, IC=10mA, IB1=-IB2=1.0mA VCC=10V, IC=10mA, IB1=-IB2=1.0mA VCC=10V, IC=10mA, IB1=-IB2=1.0mA VCC=10V, IC=10mA, IB1=-IB2=1.0mA VCC=10V, IC=100mA, IB1=-IB2=10mA VCC=10V, IC=100mA, IB1=-IB2=10mA VCC=10V, IC=100mA, IB1=-IB2=10mA VCC=10V, IC=100mA, IB1=-IB2=10mA VCC=10V, IC=100mA, IB1=-IB2=10mA VCC=10V, IC=100mA, IB1=-IB2=10mA MIN 150 TYP 85 35 50 450 400 80 55 5.0 50 450 250 200 MAX 5.0 15 10 150 800 150 800 TO-18 PACKAGE - MECHANICAL OUTLINE A B SYMBOL A (DIA) B (DIA) C D E F (DIA) G (DIA) H I J D C E F LEAD #2 LEAD #1 I 45 G H LEAD #3 J R1 DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.209 0.230 5.31 5.84 0.178 0.195 4.52 4.95 0.030 0.76 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.019 0.41 0.48 0.100 2.54 0.050 1.27 0.036 0.046 0.91 1.17 0.028 0.048 0.71 1.22 TO-18 (REV: R1) UNITS MHz pF pF dB ns ns ns ns ns ns ns ns ns ns ns ns