Philips Semiconductors Product specification High-speed diode BAL99 FEATURES DESCRIPTION PINNING Small plastic SMD package The BAL99 is a high-speed switching PIN DESCRIPTION * High switchi eed: max. 4 ns diode fabricated in planar technology, : - 9 , 99 SP and encapsulated in the small plastic 1 not connected * Continuous reverse voltage: SMD SOT23 package 2 cathode max. 70 V , 3 anode td Repetitive peak reverse voltage: max. 70 V Repetitive peak forward current: max. 500 mA . APPLICATIONS e High-speed switching in e.g. surface mounted circuits. Marking code: JFp. Fig.1 Simplified outline (SOT23) and symbol. 2 ( It } ne. 3 MAM237 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VarRm repetitive peak reverse voltage - 70 Vv Vr continuous reverse voltage . - 70 Vv lr continuous forward current see Fig.2; note 1 - 215 mA lram repetitive peak forward current - 500 mA lesm non-repetitive peak forward current | square wave; T| = 25 C prior to surge; see Fig.4 t=1ps - 4 A t=1ms ~ 1 A t=i1s - 05 |jA Prot total power dissipation Tamb = 25 C; note 1 ~ 250 mw Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10Philips Semiconductors Product specification High-speed diode BAL99 ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ve forward voltage see Fig.3 IrF=1mA - 715 mV Ir =10 mA - 855 mV Ir = 50 mA - 1 Vv ir = 150 mA ~ 1.25 1V In reverse current see Fig.5 Va =25V - 30 nA Va=70V - 1 pA Vp = 25 V; Tj = 150 C - 30 pA VR = 70 V; Tj = 150 C; - 50 pA Ca diode capacitance f= 1 MHz; Vp = 0; see Fig.6 - 1.5 |pF tr reverse recovery time when switched from I; = 10 mA to - 4 ns In = 10 mA; Ry = 100 2; measured at ip = 1 mA; see Fig.7 Vir forward recovery voltage when switched from Ir = 10 mA; - 1.75 |V t, = 20 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Pin j-tp thermal resistance from junction to tie-point 360 Kw Rin ja thermal resistance from junction to ambient | note 1 500 K/W Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10Philips Semiconductors Product specification High-speed diode BAL99 GRAPHICAL DATA 250 300 Ie (ma) ip 200 (mA) 200 150 100 100 50 0 0 50 100 150 200 Tamb CC) Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current.as a function of ambient temperature. 0 1 Ve (V) 2 (1) T, = 150 C; typical values. (2) 7) = 25 C; typical values. (3) T; = 25 C; maximum values. Fig.3 Forward current as a function of forward voltage. lesm (A) 10 107 1 10 Based on square wave currents. T; = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 104 102 10 tb (us) 1996 Sep 10 1-85Philips Semiconductors Product specification High-speed diode BAL99 408 MBH182 os MeaG44s Ip Cg (na) (pF} 104 10 102 10 0 100 Tj (C) 200 (1) V_ = 70 V; maximum vaiues. (2) Va =70 V; typical values. (3) Vp = 25 V; typical values. Fig.5 Reverse current as a function of junction temperature. 06 0.4 0.2 0 4 8 12 Va w) 16 f= 1 MHz; T; = 25C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 10Philps Semiconductors Product specification High-speed diode BAL99 t my UT. , 10% . 7 sr [tf J | eStMeeG oe / 1 Th VeVatiexAg R,=50Q T | ee (> MGAga1 input signal output signal (1) {p= 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. J, 1ka@ 450 Q ~ | v 90% - Fig= 50 9 OSCILLOSCOPE Vir J | , R;=500 10% MGABE2 | t t rl ty tp __. input output signal signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 10 1-87