CAT28C64B 64K-Bit CMOS PARALLEL E2PROM FEATURES Fast Read Access Times: Commercial, Industrial and Automotive - 120/150ns Temperature Ranges Low Power CMOS Dissipation: Automatic Page Write Operation: - Active: 25 mA Max. - Standby: 100 A Max. - 1 to 32 Bytes in 5ms - Page Load Timer Simple Write Operation: End of Write Detection: - On-Chip Address and Data Latches - Self-Timed Write Cycle with Auto-Clear - Toggle Bit - DATA Polling Fast Write Cycle Time: 100,000 Program/Erase Cycles - 5ms Max. 100 Year Data Retention CMOS and TTL Compatible I/O Hardware and Software Write Protection DESCRIPTION The CAT28C64B is manufactured using Catalyst's advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 100 years. The device is available in JEDECapproved 28-pin DIP, 28-pin TSOP, 28-pin SOIC, or, 32pin PLCC package . The CAT28C64B is a fast, low power, 5V-only CMOS Parallel E2PROM organized as 8K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-clear and VCC power up/down write protection eliminate additional timing and protection hardware. DATA Polling and Toggle status bits signal the start and end of the self-timed write cycle. Additionally, the CAT28C64B features hardware and software write protection. BLOCK DIAGRAM A5-A12 ADDR. BUFFER & LATCHES ROW DECODER VCC INADVERTENT WRITE PROTECTION HIGH VOLTAGE GENERATOR CE OE WE CONTROL LOGIC 32 BYTE PAGE REGISTER I/O BUFFERS TIMER A0-A4 8,192 x 8 E2PROM ARRAY DATA POLLING AND TOGGLE BIT ADDR. BUFFER & LATCHES I/O0-I/O7 COLUMN DECODER 5094 FHD F02 (c) 1999 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice 1 Doc. No. 25006-0A 2/98 P-1 CAT28C64B PIN CONFIGURATION DIP Package (P) NC 1 28 SOIC Package (J, K) VCC A12 2 27 WE A7 A6 3 4 26 25 NC A8 A5 5 24 A9 A4 A3 6 23 22 A11 OE 21 A10 A2 7 8 A1 9 20 CE A0 10 I/O0 I/O1 11 12 19 18 17 I/O7 I/O6 I/O5 I/O2 VSS 13 14 16 15 I/O4 I/O3 NC 1 28 VCC A12 A7 A6 A5 A4 2 3 4 5 6 27 26 25 24 23 WE NC A8 A9 A11 A3 A2 A1 A0 7 8 9 10 11 22 21 20 19 18 OE 12 13 14 17 A10 CE I/O7 I/O6 I/O5 16 15 I/O4 I/O3 I/O0 I/O1 I/O2 VSS TSOP Package (8mm x 13.4mm) (T13) A7 A12 NC NC VCC WE NC PLCC Package (N) 4 3 2 1 32 31 30 A6 A5 A4 A3 A2 A1 A0 NC 29 28 27 26 9 10 11 12 TOP VIEW 25 24 23 22 13 21 14 15 16 17 18 19 20 A8 A9 A11 NC OE A10 CE I/O7 I/O6 28 27 26 25 24 23 22 21 20 19 18 17 16 15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 I/O1 I/O2 VSS NC I/O3 I/O4 I/O5 I/O0 5 6 7 8 OE A11 A9 A8 NC WE VCC NC A12 A7 A6 A5 A4 A3 28C64B F03 5094 FHD F01 PIN FUNCTIONS Pin Name Function Pin Name Function A0-A12 Address Inputs WE Write Enable I/O0-I/O7 Data Inputs/Outputs VCC 5 V Supply CE Chip Enable VSS Ground OE Output Enable NC No Connect Doc. No. 25006-0A 2/98 P-1 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 2 CAT28C64B ABSOLUTE MAXIMUM RATINGS* *COMMENT Temperature Under Bias ................. -55C to +125C Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. Storage Temperature ....................... -65C to +150C Voltage on Any Pin with Respect to Ground(2) ........... -2.0V to +VCC + 2.0V VCC with Respect to Ground ............... -2.0V to +7.0V Package Power Dissipation Capability (Ta = 25C) ................................... 1.0W Lead Soldering Temperature (10 secs) ............ 300C Output Short Circuit Current(3) ........................ 100 mA RELIABILITY CHARACTERISTICS Symbol NEND(1) TDR (1) VZAP(1) ILTH (1)(4) Parameter Min. Max. Units Test Method Endurance 105 Cycles/Byte MIL-STD-883, Test Method 1033 Data Retention 100 Years MIL-STD-883, Test Method 1008 ESD Susceptibility 2000 Volts MIL-STD-883, Test Method 3015 Latch-Up 100 mA J