1. Product profile
1.1 General description
120 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
[1] ACPR400 at 30 kHz resolution bandwidth
[2] ACPR600 at 30 kHz resolution bandwidth
1.2 Features
■Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply
voltage of 28 V and an IDq of 650 mA
◆Load power = 48 W (AV)
◆Gain = 19 dB (typ)
◆Efficiency = 40 % (typ)
◆ACPR400 =−61 dBc (typ)
◆ACPR600 =−72 dBc (typ)
◆EVMrms = 1.5 % (typ)
■Easy power control
■Excellent ruggedness
■High efficiency
■Excellent thermal stability
■Designed for broadband operation (800 MHz to 1000 MHz)
■Internally matched for ease of use
BLF4G10LS-120
UHF power LDMOS transistor
Rev. 01 — 10 January 2006 Product data sheet
Table 1: Typical performance
f = 920 MHz to 960 MHz; T
h
=25
°
C; in a class-AB production test circuit; typical values.
Mode of operation VDS
(V) PL
(W) Gp
(dB) ηD
(%) ACPR400
(dBc) ACPR600
(dBc) EVM
(%) IMD3
(dBc)
CW 28 120 19 57 - - - -
GSM EDGE 28 48 (AV) 19 40 −61[1] −72[2] 1.5 -
2-tone 28 120 (PEP) 19 46 - - - −31
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
9397 750 14547 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 2 of 13
Philips Semiconductors BLF4G10LS-120
UHF power LDMOS transistor
1.3 Applications
■RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier
applications in the 868 MHz to 961 MHz frequency range.
2. Pinning information
[1] Connected to flange
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2: Pinning
Pin Description Simplified outline Symbol
1 drain
2 gate
3 source [1] 3
2
11
3
2
sym039
Table 3: Ordering information
Type number Package
Name Description Version
BLF4G10LS-120 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +15 V
IDdrain current - 12 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
Table 5: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-case) thermal resistance from
junction to case Tcase =80°C
PL= 60 W - 0.62 0.71 K/W
PL= 120 W - 0.52 0.61 K/W
9397 750 14547 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 3 of 13
Philips Semiconductors BLF4G10LS-120
UHF power LDMOS transistor
6. Characteristics
7. Application information
7.1 Ruggedness in class-AB operation
The BLF4G10LS-120 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;
IDq = 650 mA; PL= 120 W (CW); f = 960 MHz.
Table 6: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D= 0.9 mA 65 - - V
VGS(th) gate-source threshold
voltage VDS =10V; I
D= 180 mA 2.5 3.1 3.5 V
VGSq gate-source quiescent
voltage VDS =28V; I
D= 900 mA 2.70 3.20 3.70 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 2.5 µA
IDSX drain cut-off current VGS =V
GS(th) +9V;
VDS =10V 27 30 - A
IGSS gate leakage current VGS =15V; V
DS = 0 V - - 300 nA
gfs forward
transconductance VDS =10V; I
D= 10 A - 9.0 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) +6V;
ID=6A -90-mΩ
Crs feedback capacitance VGS =0V; V
DS =28V;
f = 1 MHz - 2.5 - pF
Table 7: Application information
Mode of operation: GSM EDGE; f = 920 MHz and 960 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 650 mA; T
case
=25
°
C; unless otherwise specified, in a class AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 48 W 17.5 19 - dB
IRL input return loss PL(AV) = 48 W - −8.0 −5.5 dB
ηDdrain efficiency PL(AV) = 48 W 35.8 40 - %
ACPR400 adjacent channel power ratio (400 kHz) PL(AV) = 48 W - −61 −58 dBc
ACPR600 adjacent channel power ratio (600 kHz) PL(AV) = 48 W - −72 −68 dBc
EVMrms rms EDGE signal distortion error PL(AV) = 48 W - 1.5 2.5 %
EVMMpeak EDGE signal distortion error PL(AV) = 48 W - 5 8.5 %
9397 750 14547 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 4 of 13
Philips Semiconductors BLF4G10LS-120
UHF power LDMOS transistor
VDS = 28 V; IDq = 650 mA; Tcase =25°C;
f = 960 MHz VDS =28V; I
Dq = 650 mA; Tcase =25°C;
f = 960 MHz
Fig 1. One-tone CW power gain and drain efficiency
as functions of load power; typical values Fig 2. Two-tone CW power gain and drain efficiency
as functions of average load power; typical
values
VDS = 28 V; IDq = 650 mA; Tcase =25°C;
f = 960 MHz VDS =28V; T
case =25°C; f = 960 MHz
(1) IDq = 550 mA
(2) IDq = 650 mA
(3) IDq = 750 mA
(4) IDq = 850 mA
Fig 3. Intermodulation distortion as a function of
average load power; typical values Fig 4. Third order intermodulation distortion as a
function of average load power; typical values
PL (W)
0 18014080 1004020 60 120 160
001aac410
14
16
12
18
20
Gp
(dB)
10
20
30
10
40
50
60
70 ηD
(%)
0
Gp
ηD
PL(AV) (W)
0907040 502010 30 60 80
001aac411
14
16
12
18
20
Gp
(dB)
10
20
30
10
40
50
60 ηD
(%)
0
Gp
ηD
PL(AV) (W)
0806020 40
001aac412
−40
−60
−20
0
IMD
(dBc)
−80
IMD3
IMD5
IMD7
PL(AV) (W)
0806020 40
001aac413
−40
−60
−20
0
IMD3
(dBc)
−80
(3)
(4)
(2)
(1)
9397 750 14547 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 5 of 13
Philips Semiconductors BLF4G10LS-120
UHF power LDMOS transistor
VDS =28V; I
Dq = 650 mA; Tcase =25°C;
f = 960 MHz VDS =28V; I
Dq = 650 mA; Tcase =25°C;
f = 960 MHz
Fig 5. GSM EDGE power gain and drain efficiency as
functions of average load power; typical values Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
a function of average load power; typical values
VDS = 28 V; IDq = 650 mA; Tcase =25°C;
f = 960 MHz VDS =28V; I
Dq = 650 mA; Tcase =25°C;
f = 960 MHz
Fig 7. GSM EDGE rms EVM and peak EVM as
functions of average load power; typical values Fig 8. GSM EDGE ACPR at 400 kHz and rms EVM as
functions of drain efficiency; typical values
PL(AV) (W)
0806020 40
001aac414
17
18
16
19
20
15
Gp
ηD
20
10
40
50
30
ηD
(%)
0
Gp
(dB)
PL(AV) (W)
0806020 40
001aac415
−70
−80
−60
−50
ACPR
(dBc)
−90
ACPR400
ACPR600
PL(AV) (W)
0806020 40
001aac416
4
6
2
8
10
EVM
(%)
0
EVMM
EVMrms
ηD (%)
0504020 3010
001aac417
−64
−68
−60
−56
ACPR
(dBc)
−72
ACPR400
EVMrms
2
1
3
4
3
2
1
EVM
(%)
0
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9397 750 14547 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 6 of 13
Philips Semiconductors BLF4G10LS-120
UHF power LDMOS transistor
8. Test information
See Table 8 for list of components.
Fig 9. Class-AB test circuit at f = 960 MHz
C9
C5
R1
C1 C4
C2 C3
C10C8C7C6
VDS
VGS
RF in RF out
001aad830
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xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
9397 750 14547 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 7 of 13
Philips Semiconductors BLF4G10LS-120
UHF power LDMOS transistor
Striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) (εr= 6.2); thickness = 0.025 inches.
See Table 8 for list of components.
Fig 10. Component layout for 960 MHz test circuit
C1 C2
C5 C6 C7 C8 C10
C3 C4
R1
C9
VGS
001aad831
PHILIPS
BLF4G10-120 rev.1 in PHILIPS
BLF4G10-120 rev.1 out
VDS
9397 750 14547 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 8 of 13
Philips Semiconductors BLF4G10LS-120
UHF power LDMOS transistor
[1] American Technical Ceramics type 100B or capacitor of same quality.
Table 8: List of components (see Figure 9 and Figure 10)
Component Description Value Dimensions Catalogue number
C1, C4, C5, C6 multilayerceramic chip
capacitor [1] 68 pF
C2 multilayerceramic chip
capacitor [1] 5.1 pF
C3 multilayerceramic chip
capacitor [1] 3.0 pF
C7 multilayerceramic chip
capacitor 1µF 1812X7R105KL2AB
C8, C9 tantalum capacitor 10 µF; 35 V
C10 Philips electrolytic
capacitor 220 µF
R1 Philips chip resistor 5.1 Ω0603
9397 750 14547 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 9 of 13
Philips Semiconductors BLF4G10LS-120
UHF power LDMOS transistor
9. Package outline
Fig 11. Package outline SOT502B
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502B 99-12-28
03-01-10
0 5 10 mm
scale
Earless flanged LDMOST ceramic package; 2 leads SOT502B
AF
b
D
U2
L
H
Q
c
1
3
2
D1
E
D
U1
D
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25
w2
F
1.14
0.89
U1
20.70
20.45
L
5.33
4.32
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.010
0.045
0.035 0.815
0.805
0.210
0.170 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
9397 750 14547 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 10 of 13
Philips Semiconductors BLF4G10LS-120
UHF power LDMOS transistor
10. Abbreviations
Table 9: Abbreviations
Acronym Description
CDMA Code Division Multiple Access
CW Continuous Wave
EDGE Enhanced Data rates for GSM Evolution
ESR Equivalent Series Resistance
EVM Error Vector Magnitude
GSM Global System for Mobile communications
IDq quiescent drain current
LDMOS Laterally Diffused Metal Oxide Semiconductor
PEP Peak Envelope Power
RF Radio Frequency
SMD Surface Mount Device
VSWR Voltage Standing Wave Ratio
Philips Semiconductors BLF4G10LS-120
UHF power LDMOS transistor
9397 750 14547 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 11 of 13
11. Revision history
Table 10: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
BLF4G10LS-120_1 20060110 Product data sheet - 9397 750 14547 -
Philips Semiconductors BLF4G10LS-120
UHF power LDMOS transistor
9397 750 14547 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 10 January 2006 12 of 13
12. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
15. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.Date of release: 10 January 2006
Document number: 9397 750 14547
Published in The Netherlands
Philips Semiconductors BLF4G10LS-120
UHF power LDMOS transistor
17. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
12 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 12
13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
16 Contact information . . . . . . . . . . . . . . . . . . . . 12
