VTB Process Photodiodes VTB5051UVJH PACKAGE DIMENSIONS inch (mm) CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a three lead TO-5 package with a UV transmitting "flat" window. Chip is isolated from the case. The third lead allows case to be grounded. These diodes have very high shunt resistance and have good blue response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40C to 110C -40C to 110C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22) SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CHARACTERISTIC Short Circuit Current VTB5051UVJH TEST CONDITIONS H = 100 fc, 2850 K Min. Typ. 85 130 ISC Temperature Coefficient 2850 K .12 Open Circuit Voltage H = 100 fc, 2850 K 490 VOC Temperature Coefficient 2850 K -2.0 Dark Current H = 0, VR = 2.0 V UNITS Max. A .23 %/C mV mV/C 250 pA Shunt Resistance H = 0, V = -10 mV .56 G RSH Temperature Coefficient H = 0, V = -10 mV -8.0 %/C CJ Junction Capacitance H = 0, V = 0 3.0 nF SR Sensitivity 365 nm 0.1 A/W SR Sensitivity 220 nm range Spectral Application Range .038 A/W 200 1100 nm p Spectral Response - Peak VBR Breakdown Voltage 1/2 Angular Resp. - 50% Resp. Pt. 50 Degrees NEP Noise Equivalent Power 2.1 x 10-14 (Typ.) Specific Detectivity 1.8 x 10 13 (Typ.) W Hz cm Hz W D* 2 PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 33 920 nm 40 V Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto