IXFX180N10 - IXYS - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 100 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ 100 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C ( Chip Capabitlty) 180 A

ILRMS Leads Current Limit, RMS 160 A

IDM TC= 25°C, Pulse Width Limited by TJM 720 A

IATC= 25°C 180 A

EAS TC= 25°C3J

dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns

PDTC= 25°C 560 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Force (PLUS247) 20..120/4.5..27 N/lb.

MountingTorque (TO-264) 1.13/10 Nm/lb.in.

Weight PLUS247 6 g

TO-264 10 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 3mA 100 V

VGS(th) VDS = VGS, ID = 8mA 2.0 4.0 V

IGSS VGS = ±20V, VDS = 0V ±100 nA

IDSS VDS = VDSS 100 μA

VGS = 0V TJ = 125°C 2 mA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 8 mΩ

HiperFETTM Power

MOSFETs

Single MOSFET Die

IXFK180N10

IXFX180N10

VDSS = 100V

ID25 = 180A

RDS(on) ≤≤

≤≤

≤ 8mΩΩ

ΩΩ

Ω

G = Gate D = Drain

S = Source TAB = Drain

(TAB)

GDS

TO-264 (IXFK)

PLUS247 (IXFX)

(TAB)

DS98552D(02/09)

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

zInternational Standard Packages

zHigh Current Handling Capability

zAvalanche Rated

zLow RDS(on) HDMOSTM Process

zFast intrinsic diode

zLow Package Inductance

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

Applications

zDC-DC Converters

zBattery Chargers

zSwitched-Mode and Resonant-Mode

Power Supplies

zDC Choppers

zAC Motor Drives

zTemperature and Lighting Controls

IXFK180N10

IXFX180N10

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 10V, ID = 60A, Note 1 45 76 S

Ciss 10.90 nF

Coss VGS = 0V, VDS = 25V, f = 1MHz 3.55 nF

Crss 1.94 nF

td(on) 50 ns

tr 90 ns

td(off) 140 ns

tf 65 ns

Qg(on) 390 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 55 nC

Qgd 195 nC

RthJC 0.22 °C/W

RthCS 0.15 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 180 A

ISM Repetitive, Pulse Width Limited by TJM 720 A

VSD IF = 100A, VGS = 0V, Note 1 1.5 V

trr 250 ns

QRM 1.1 μC

IRM 13 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 1Ω (External)

IF = 90A, -di/dt = 100A/μs

VR = 50V, VGS = 0V

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

PLUS 247TM (IXFX) Outline

TO-264 (IXFK) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A12.29 2.54 .090 .100

A21.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b11.91 2.13 .075 .084

b22.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

IXFK180N10

IXFX180N10

IXYS REF: F_180N10(9X)2-24-09-B

Fig. 1. Outpu t C h ar acteri sti cs

@ 25ºC

0

20

40

60

80

100

120

140

160

180

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V

DS

- Volts

I

D

- A mpe res

V

GS

= 10V

9V

8V

7V

5V

6V

Fig. 2. Extended Output Characteristics

@ 25º C

0

50

100

150

200

250

300

350

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V

DS

- Volts

I

D

- A mpe res

V

GS

= 10V

9V

5V

6V

7V

8V

Fi g . 3. Ou tp u t C h ar acter isti cs

@ 125ºC

0

20

40

60

80

100

120

140

160

180

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

V

DS

- Volts

I

D

- A mpe res

V

GS

= 10V

9V

8V

5V

6V

7V

Fig. 4. R

DS(on)

Normalized to I

D

= 90A Value

vs. Junction Temp erature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- N orma lize d

V

GS

= 10V

I

D

= 180A

I

D

= 90A

Fig. 5. R

DS(on)

Normalized to I

D

= 90A Value

vs. Drain Current

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2.0

0 30 60 90 120 150 180 210 240 270 300 330

I

D

- Ampe res

R

DS(on)

- N orma lize d

V

GS

= 10V

15V

- - - - -

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temp er atur e

0

20

40

60

80

100

120

140

160

180

-50 -25 0 25 50 75 100 125 150

T

C

- Deg rees Centigrade

I

D

- Am peres

Ext er nal Lead Current Limit

IXFK180N10

IXFX180N10

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 7. Input Admittance

0

25

50

75

100

125

150

175

200

225

250

275

300

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0

V

GS

- Volts

I

D

- Am peres

T

J

= - 40ºC

25ºC

125ºC

Fig. 8. Tr anscon ductance

0

10

20

30

40

50

60

70

80

90

100

110

120

130

140

0 50 100 150 200 250 300

I

D

- A mp ere s

g f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

50

100

150

200

250

300

350

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

V

SD

- Vo lts

I

S

- Am peres

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 50 100 150 200 250 300 350 400

Q

G

- Nan oCoulombs

V

GS

- V o lts

V

DS

= 50V

I

D

= 90A

I

G

= 10mA

Fig. 11. Capacitance

1

10

100

0 5 10 15 20 25 30 35 40

V

DS

- Vo lts

Capacitance - NanoFarad

s

f

= 1 MHz

Ciss

Crss

Coss

Fi g. 12. Maximu m Transi en t Th er mal

Impedance

0.001

0.010

0.100

1.000

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXFK180N10

IXFX180N10

Fig. 13. Forward-Bias Safe Operating Area

@ TC = 25ºC

1

10

100

1,000

1 10 100

V

DS

- V olts

I

D

- Am peres

TJ = 150ºC

TC = 25ºC

Sing le Pulse

25µs

1ms

100µs

RDS(on) Limit

10ms

DC

100ms

Ext ernal Lead Limit

Fig. 14. Forward-Bias Safe Operating Area

@ TC = 75ºC

1

10

100

1,000

1 10 100

V

DS

- V olts

I

D

- Am peres

TJ = 150ºC

TC = 75ºC

Single Pulse

25µs

1ms

100µs

RDS(on) Limit

10ms

DC

100ms