Feb. 2009
Tc measured point
E1 E2 G2
G1
CM
C1
E2
C2E1
LABEL
4-φ6. 5 MOUNTING HOLES
3-M6 NUTS
108
29
+1.0
–0.5
62
18 7 18 7 18
8.5
22
4
93
±0.25
48
±0.25
2.8
4
7.5
6
(8.25)
(18)
15
15.85
6
0.5
0.5 0.5
0.5
14 14 14
25 2.521.525
RTC
RTC
CIRCUIT DIAGRAM
C2E1
E2 C1
G2E2
E1
G1
CM200DU-24F
APPLICATION
General purpose inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM200DU-24F
HIGH POWER SWITCHING USE
¡IC ...................................................................200A
¡VCES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Feb. 2009
2
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
VCC = 600V, IC = 200A, VGE = 15V
VCC = 600V, IC = 200A
VGE = ±15V
RG = 1.6Ω, Inductive load
IE = 200A
IE = 200A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound applied
*2
(1/2 module)
Case temperature measured point is just under the chips
IC = 20mA, VCE = 10V
IC = 200A, VGE = 15V
VCE = 10V
VGE = 0V
1200
±20
200
400
200
400
830
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
MITSUBISHI IGBT MODULES
CM200DU-24F
HIGH POWER SWITCHING USE
V
V
W
°C
°C
Vrms
N • m
N • m
g
A
A
1
40
2.4
—
78
3.4
2.0
—
300
80
500
300
200
—
3.2
0.15
0.18
—
0.091*3
16
mA
µA
nF
nC
µC
V
K/W
Ω
—
—
1.8
1.9
—
—
—
2200
—
—
—
—
—
12.2
—
—
—
0.04
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
6V
V
ns
57
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance*1
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Symbol Parameter
VGE(th)
VCE(sat)
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
TC = 25°C
Pulse (Note 2)
TC = 25°C
Pulse (Note 2)
TC = 25°C
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
—
Unit
Typ.
Limits
Min. Max.
—
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Test conditions
Tj = 25°C
Tj = 125°C
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM200DU-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
VGE = 20V
Tj = 25°C
15
11
10
9.5
9
8.5
8
400
200
100
250
300
350
150
50
00 0.5 1 1.5 2 2.5 3 3.5 4
3
2.5
2
1.5
0.5
1
00 200100 400300
Tj = 25°C
Tj = 125°C
VGE = 15V
101
102
2
3
5
7
103
2
3
5
7
0.5 1 1.5 2 2.5 3 3.5
Tj = 25°C
5
4
3
2
1
02068 12 1610 14 18
IC = 400A
IC = 200A
IC = 80A
Tj = 25°C
10–1
10–1
100
2
3
5
7
101
2
3
5
7
102
2
3
5
7
2100
357 2 101
357 2 102
357
VGE = 0V
Cies
Coes
Cres
101102
57 103
23 57
101
2
3
5
7
102
2
3
5
7
103
2
3
5
7
100
Conditions:
VCC = 600V
VGE = ±15V
RG = 1.6Ω
Tj = 125°C
Inductive load
23
td(off)
td(on)
tf
tr
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
SWITCHING TIMES (ns)
COLLECTOR CURRENT IC (A)
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM200DU-24F
HIGH POWER SWITCHING USE
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
trr
Irr
0
6
4
2
10
8
16
14
12
20
18
0 500 1500 2500 30001000 2000
VCC = 400V
VCC = 600V
IC = 200A
10
1
10
–3
10–5 10–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10–3
23 57 23 57 23 57 23 57
101
10–2 10–1 100
10–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
Single Pulse
TC = 25°C
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.6Ω
T
j
= 25
°C
Inductive load
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
TIME (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
IGBT part:
Per unit base = Rth(j–c) = 0.15K/W
FWDi part:
Per unit base = Rth(j–c) = 0.18K/W
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
