VARACTOR SELECTOR GUIDE Series Capacitance Qa Max Working Voltage Leakage Current bow Comments 1-100pf | >100pf | 7-50 0-150 >150 10-50 | 50-100 | >100 <10nA | <1.0,A CV830- Replaces MV830-MV840 CVv840 x X X X xX DO-7 Glass CV1006-16- Replaces FV1006-16, FV1106-16 CV1106-16 Xx x x x DO-7 Glass CV1620- Replaces MV1620-MV1650 Cv1650 x x x x x DO-7 Glass CV1652- Replaces MV1652-MV1666 CV1666 Xx xX X xX X DO-14 Glass Cvs000- Low Cost, Hermetic DO-7 Package CV5100 x Xx Xx Xx Xx X | Electrically Equivalent to Plastic MV2101-2115 V7-V100 x Xx V7- V100E xX X X X X xX v900- v982 X x X X X | 5nA Leakage Current V900E- V982E X X X X x xX VA107- Replaces PC107~PC173 VA173 x xX X X X DO-7, DO-14 Glass VA200- VA123 xX Xx X X 150Vo Rating VA300- VA313 Xx X Xx X {| 200Vp Rating VA521- VA824 x x x x Capacitance to 1300 pf VG107- VG339 X xX X x V20G- V100G x xX X X X x 1N950- 1N956 xX xX xX X xX x X | General Purpose, Low Cost 1N4786- 1N4815 X x X X X X | Low Leakage 1N5139 High Q (to 350), 60 Volt Ratings. A Tolerance 1N5148 X X X xX X | JAN, JANTX Qualified. 1N5441- 1N5476 x x xX xX X | Very High Q (up to 600), 30 Volt Ratings 1N5461- B and C Tolerance 1N5476 X xX Xx x X | JAN, JANTX Qualified. VA5139- 90 Volt Breakdown Equivalents to 1N5139-1N5143 VA5143 x xX Xx x High RF Voltage Applications 1N5714- High Voltage (to 20) Volts: High Capacitance 1N5718 x xX x x (to 1300pf), High Q (to 300)GENERAL PURPOSE SILICON EPITAXIAL VARACTRON renee VOLTAGE-VARIAGLE CAPACITANCE DIODES ALL EPITAXIAL CONSTRUCTION (P-+NN-+) MECHANICAL DATA e DC(MWV) RATINGS 00-7, PACKAGE FROM 15-130 VOLTS Dumet Leads, Tinned e VERY LOW LEAKAGE | o.o86-20.011 DIA e ABRUPT JUNCTION | ELECTRICAL DATA AS8SOLUTE MAXIMUM RATINGS PARAMETER SYMBOL | MAXIMUM | UNITS cathode 0.265:0.035 Operating Temperature Toor 65 to +150 26 (wide color band) Storage Temperature Titg 65 to +175 Total Power Dissipation (@ 25C in free air) Pp 400 mW 12.020%0.002 5 < 1.0 MIN. Maximum Working Voltage MWV as specified* VDC | *Bias voltage plus signal voltage should not exceed MWV All Dimensions ia Inches ELECTRICAL CHARACTERISTICS Ta = 25C (UNLESS OTHERWISE STATED) CAPACITANCE MAXIMUM WORKING |TYPICAL CAPACITANCE MAX. INVERSE DIODE (pf) VOLTAGE (MWY) RANGE (pf) Q@ 4VDC, 50 MC CURRENT (,,A DC) TYPE +20% @ 4V, IMC (VDC) (@ 0.1V to MWV) MINIMUM TYPICAL pA Test Volts 1N950 35 130 88 to 6 7 10 130 1N951 90 80 120 to 12 7 1.0 80 1N952 70 60 170 to 20 7 10 60 1N953 100 25 240 to 46 7 1.0 25 1N954 35 25 88 to 14 7 _ 10 25 1N955 50 25 120 to 22 7 _ 10 25 1N956 70 25 170 to 32 7 10 25 1N3627 20.0 to 22.5 20 50 to 10 25 0.01 13.5 1N3628 47.0 to 53.0 20 125 to 25 30 0.01 13.5 V20G 20 20 50 to 10 10 30 0.2 15 V20EG 20 70 50to 5 10 30 0.5 50 V27G 27 20 70 to 14 10 30 0.2 15 V27EG 27 65 70 to 7 10 30 0.5 50 V33G 33 20 85 to 17 10 30 0.2 15 V33EG 33 60 85 to 9 10 30 0.5 45 V39G 39 20 100 to 20 10 30 0.2 15 V39EG 39 59 100 to 10 10 30 0.5 40 V47G 47 20 120 to 24 10 30 0.2 15 V47EG 47 50 120 to 14 10 30 0.5 38 V56G 56 15 145 to 32 10 30 0.2 10 V56EG 56 40 145 to 20 10 30 0.5 30 V68G 68 15 175 to 39 12 30 0.2 10 V82G 82 15 210 to 47 12 30 0.2 10 V100G 100 15 260 to 57 10 30 0.2 10 NOTE: Capacitance values are +20%. Tolerances of +10% and +5%, and matched pairs, are available upon request. Capacitance values can be modified to meet specific requirements. \ TELEDYN 147 Sherman Street, Cambridge, Mass. 02140 CRYSTALONICS Tel: (617) 491-1670 TWX: 710-320-1196 1920 CAPACITANCE unt TUNING RATIO C./C(V) 100 1N950 ~- 956 - V20G 100G Continued A7uut (TYPICAL AT 4 VOLTS BIAS) 10 Corove = C, + Curse yoo K (WV + @) _ O.1 1 4 10 100 REVERSE BIAS VOLTAGE (Vdc) TYPICAL DIODE CAPACITANCE VS BIAS VOLTAGE CHARACTERISTICS AT 25C TYPICAL 4 VOLT CAPACITANCE o 10 20 30 40 50 60 70 80 90 = 100 REVERSE BIAS VOLTAGE (Vdc) RATIO OF DIODE CAPACITANCES AT ZERO AND REVERSE BIAS VOLTAGES AT 25C FOR TYPICAL DIODES 600 @ 4 Vde, 50 Mc 1 FIGURE OF MERIT (Q) 1 2 3 4 56 10 20 30 40 50 60 100 REVERSE BIAS VOLTAGE (Vdc) FIGURE OF MERIT (Q) VS BIAS VOLTAGE AT 25C NR oN ow PERCENT CAPACITANCE | 3 CHANGE FROM 25C VALUE fa ao b ous | N w -40 20 0 20 40 60 80 100 120 140 TEMPERATURE (C) TEMPERATURE COEFFICIENT OF CAPACITANCE IN PERCENT CHANGE OF 25 VALUE Crystalonics 1N950-956 and V20G-100G Varactron Voltage-Variable Capacitance Diodes are designed for applications such as VHF-UHF frequency multiplication, harmonic generation, oscillator tuning, electronic tuning, frequency modulation, parametric amplifiers, auto- matic frequency control, limiting, and switching. These diodes are manufactured by Crystalonics exclusive Epitaxial Junction Process, which provides close parameter tolerances, high parameter stability, extreme ruggedness, and a high product of Q and Maximum Working Voltage. \ TELEDYNE CRYSTALONICS 147 Sherman Street, Cambridge, Mass. 02140 Tel: (617) 491-1670 TWX: 710-320-1196