BFR96TS Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 13623 1 BFR96TS Marking: BFR96TS Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = Base Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Tamb 45 C Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2.5 100 700 150 -65 to +150 Unit V V V mA mW C C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Document Number 85037 Rev. 5, 22-Jan-01 Symbol RthJA Value 150 Unit K/W www.vishay.com 1 (9) BFR96TS Vishay Semiconductors Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions VCE = 20 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 2.5 V, IC = 0 IC = 5 mA, IB = 0 VCE = 10 V, IC = 70 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 10 mA V(BR)CEO 15 V hFE 25 75 150 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Power gain Linear output voltage - two tone intermodulation test Third order intercept point www.vishay.com 2 (9) Test Conditions VCE = 10 V, IC = 70 mA, f = 500 MHz VCB = 10 V, f = 1 MHz VCE = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 10 V, IC = 70 mA, ZS = 50 , f = 500 MHz VCE = 10 V, IC = 70 mA, ZS = 50 , f = 800 MHz VCE = 10 V, IC = 70 mA, ZS = 50 , ZL = ZLopt, f = 800 MHz VCE = 10 V, IC = 70 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 VCE = 10 V, IC = 70 mA, f = 800 MHz W Symbol fT Ccb Cce Ceb F Min Typ 5 0.84 0.4 3.5 3.3 Max Unit GHz pF pF pF dB W F 4.0 dB W Gpe 11.5 dB V1 = V2 500 mV IP3 37 dBm W Document Number 85037 Rev. 5, 22-Jan-01 BFR96TS Vishay Semiconductors Common Emitter S-Parameters Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 VCE/V IC/mA 5 5 10 30 Document Number 85037 Rev. 5, 22-Jan-01 f/MHz 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 LIN MAG 0.691 0.552 0.518 0.499 0.488 0.477 0.459 0.446 0.427 0.538 0.465 0.452 0.444 0.436 0.429 0.413 0.403 0.387 0.387 0.401 0.400 0.401 0.392 0.390 0.375 0.365 0.351 S21 ANG deg -68.6 -135.5 -162.6 173.8 162.5 152.5 139.2 125.8 118.9 -92.3 -152.7 -173.7 167.6 157.3 148.6 136.4 124.0 116.8 -134.8 -172.7 174.0 160.7 152.5 144.5 133.8 121.9 115.4 LIN MAG 11.94 6.04 3.85 2.47 1.99 1.68 1.37 1.15 1.05 17.08 7.31 4.51 2.87 2.31 1.96 1.59 1.35 1.24 22.79 8.44 5.13 3.25 2.61 2.21 1.81 1.54 1.41 S12 ANG deg 137.4 100.7 84.4 68.1 59.7 52.3 43.1 34.7 29.9 126.6 94.9 81.7 67.7 60.3 53.5 44.7 36.5 31.8 112.9 89.5 79.0 67.1 60.5 54.2 46.1 38.3 33.6 LIN MAG 0.044 0.071 0.087 0.114 0.136 0.161 0.203 0.247 0.272 0.035 0.060 0.085 0.125 0.153 0.182 0.227 0.271 0.294 0.024 0.055 0.088 0.137 0.170 0.202 0.249 0.293 0.315 S22 ANG deg 59.4 46.5 49.4 55.7 58.7 60.2 60.5 59.0 57.6 57.6 57.1 61.7 64.1 64.0 63.0 60.3 57.0 54.8 65.1 71.8 72.5 69.9 67.7 64.8 60.2 55.6 52.7 LIN MAG 0.807 0.521 0.453 0.444 0.458 0.478 0.515 0.553 0.577 0.672 0.389 0.341 0.343 0.359 0.379 0.415 0.451 0.474 0.467 0.255 0.234 0.249 0.269 0.291 0.326 0.362 0.383 ANG deg -28.82 -45.0 -51.6 -63.0 -71.3 -79.3 -91.2 -102.4 -109.4 -38.9 -51.7 -57.7 -69.2 -77.5 -85.2 -96.2 -106.4 -112.6 -52.1 -60.2 -67.0 -79.7 -87.9 -95.2 -105.1 -113.7 -119.0 www.vishay.com 3 (9) BFR96TS Vishay Semiconductors S11 VCE/V IC/mA 50 5 70 5 10 10 www.vishay.com 4 (9) f/MHz 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 LIN MAG 0.370 0.395 0.396 0.395 0.389 0.386 0.373 0.363 0.348 0.374 0.397 0.399 0.398 0.394 0.389 0.378 0.368 0.355 0.710 0.542 0.497 0.479 0.464 0.454 0.438 0.427 0.410 0.544 0.436 0.417 0.410 0.397 0.394 0.384 0.372 0.357 S21 ANG deg -150.0 -177.8 171.3 159.1 150.9 143.3 133.2 121.7 115.4 -157.4 179.7 170.0 158.4 150.3 143.3 132.8 121.7 114.9 -62.3 -129.2 -157.8 177.3 165.3 155.0 141.0 127.6 119.7 -83.4 -146.3 -169.2 170.8 160.5 151.1 139.1 125.9 118.6 LIN MAG 23.94 8.62 5.23 3.30 2.66 2.25 1.83 1.56 1.43 24.17 8.60 5.19 3.29 2.65 2.24 1.82 1.55 1.42 12.15 6.46 4.14 2.66 2.14 1.81 1.45 1.23 1.11 17.99 7.94 4.94 3.14 2.52 2.13 1.73 1.46 1.33 S12 ANG deg 109.0 87.9 78.1 66.7 60.2 54.0 45.8 38.2 33.5 107.0 87.1 77.7 66.2 59.8 53.5 45.4 37.7 32.9 140.0 103.2 86.6 70.2 61.8 54.5 45.0 36.5 31.8 129.3 96.9 83.4 69.6 62.1 55.5 46.6 38.1 33.4 LIN MAG 0.022 0.055 0.090 0.140 0.173 0.206 0.253 0.297 0.319 0.021 0.055 0.090 0.141 0.175 0.207 0.255 0.299 0.321 0.036 0.061 0.075 0.099 0.118 0.141 0.178 0.219 0.244 0.029 0.052 0.073 0.109 0.134 0.160 0.201 0.241 0.264 S22 LIN MAG ANG deg 69.6 75.4 74.8 71.1 68.2 65.1 60.1 55.4 52.5 73.0 77.4 75.7 71.6 68.6 65.3 60.3 55.4 52.5 61.8 48.7 51.4 58.2 61.7 63.7 64.5 63.7 62.4 60.1 58.8 63.5 66.4 66.8 66.1 63.8 61.1 59.0 0.399 0.221 0.208 0.229 0.250 0.273 0.308 0.343 0.364 0.364 0.206 0.197 0.221 0.243 0.267 0.303 0.338 0.359 0.844 0.591 0.528 0.519 0.533 0.550 0.585 0.623 0.646 0.722 0.463 0.419 0.419 0.433 0.450 0.483 0.520 0.542 ANG deg -55.7 -62.3 -69.7 -82.8 -90.8 -98.0 -107.5 -115.7 -120.8 -56.8 -62.5 -70.3 -83.6 -91.7 -98.8 -108.2 -116.3 -121.3 -23.2 -36.7 -42.4 -52.7 -60.5 -68.3 -79.8 -91.0 -98.1 -31.2 -40.3 -45.2 -55.8 -63.6 -71.3 -82.5 -93.0 -99.6 Document Number 85037 Rev. 5, 22-Jan-01 BFR96TS Vishay Semiconductors S11 VCE/V IC/mA 30 10 50 70 Document Number 85037 Rev. 5, 22-Jan-01 f/MHz 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 LIN MAG 0.356 0.351 0.349 0.351 0.348 0.343 0.334 0.328 0.312 0.325 0.337 0.339 0.343 0.337 0.334 0.327 0.322 0.311 0.323 0.339 0.339 0.344 0.341 0.340 0.333 0.326 0.318 S21 ANG deg -122.3 -167.1 178.4 164.4 155.5 147.4 136.6 124.7 117.3 -137.8 -172.8 174.8 162.2 154.3 146.6 136.1 124.1 118.2 -145.1 -175.6 174.1 162.0 153.8 146.2 135.6 14.2 117.8 LIN MAG 24.66 9.31 5.65 3.59 2.88 2.44 1.97 1.68 1.53 26.14 9.52 5.78 3.65 2.94 2.48 2.02 1.70 1.55 26.39 9.46 5.74 3.62 2.92 2.46 1.99 1.68 1.54 S12 ANG deg 115.3 90.0 80.5 68.7 62.2 56.0 47.6 39.6 35.0 110.8 89.1 79.3 68.1 61.8 55.6 47.5 39.6 34.6 108.4 88.1 78.8 67.5 61.1 55.0 46.8 39.0 34.0 LIN MAG 0.021 0.048 0.077 0.121 0.150 0.179 0.222 0.262 0.283 0.019 0.049 0.079 0.123 0.153 0.183 0.226 0.267 0.288 0.018 0.049 0.079 0.124 0.154 0.184 0.227 0.268 0.289 S22 ANG deg 66.0 72.5 73.6 71.6 69.7 67.3 63.2 59.1 56.5 69.8 75.9 75.7 72.6 70.1 67.4 63.0 58.7 55.9 72.0 76.9 76.3 72.8 70.4 67.6 63.0 58.6 55.9 LIN MAG 0.525 0.333 0.313 0.323 0.340 0.358 0.390 0.426 0.447 0.457 0.299 0.286 0.300 0.318 0.338 0.370 0.406 0.428 0.424 0.287 0.278 0.295 0.313 0.333 0.367 0.403 0.425 ANG deg -40.2 -42.5 -48.0 -60.0 -68.3 -76.2 -87.2 -97.0 -103.1 -41.9 -42.2 -48.2 -61.0 -69.7 -77.6 -88.5 -98.2 -104.1 -41.8 -41.1 -47.7 -61.0 -69.7 -77.6 -88.7 -98.4 -104.4 www.vishay.com 5 (9) BFR96TS Vishay Semiconductors Typical Characteristics (Tamb = 25_C unless otherwise specified) C cb - Collector Base Capacitance ( pF ) P tot - Total Power Dissipation ( mW ) 800 700 600 500 400 300 200 100 0 0 25 50 75 100 125 1.2 0.8 0.4 f=1MHz 0 0 4 8 12 16 20 VCB - Collector Base Voltage ( V ) 13598 Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 3. Collector Base Capacitance vs. Collector Base Voltage 5 7000 6000 F - Noise Figure ( dB ) f T - Transition Frequency ( MHz ) 1.6 150 Tamb - Ambient Temperature ( C ) 16780 2.0 5000 4000 3000 2000 VCE=10V f=500MHz 1000 0 4 f=800MHz 3 2 f=500MHz 1 VCE=10V ZS=50 W 0 0 13597 20 40 60 80 IC - Collector Current ( mA ) Figure 2. Transition Frequency vs. Collector Current www.vishay.com 6 (9) 0 100 13599 10 20 30 40 50 60 70 IC - Collector Current ( mA ) Figure 4. Noise Figure vs. Collector Current Document Number 85037 Rev. 5, 22-Jan-01 BFR96TS Vishay Semiconductors VCE = 10 V, IC = 70 mA , Z0 = 50 W S12 S11 j 90 120 j0.5 60 j2 150 j0.2 1.0 2.0 GHz AAA AAAAAA AAA AAAAAA 1.0 0 30 2.0 GHz j5 0.2 0.5 1 2 1 5 0.1 180 0.2 0.4 0 0.1 -j0.2 -j5 -150 -j0.5 -30 -j2 -120 -j 13 542 -60 -90 13 543 Figure 5. Input reflection coefficient Figure 7. Reverse transmission coefficient S21 S22 j 90 120 60 j0.5 150 j2 30 1.0 j0.2 0.3 180 2.0 GHz 20 40 0 0 j5 AAA AAA AA AA AA AAA AAA AAAAAA 0.2 0.5 1 2 1 5 0.3 1.0 -j0.2 -150 0.1 2.0 GHz -j5 -30 -j0.5 -120 13 544 -90 Figure 6. Forward transmission coefficient Document Number 85037 Rev. 5, 22-Jan-01 -j2 -60 95 545 -j Figure 8. Output reflection coefficient www.vishay.com 7 (9) BFR96TS Vishay Semiconductors Dimensions of BFR96TS in mm 96 12244 www.vishay.com 8 (9) Document Number 85037 Rev. 5, 22-Jan-01 BFR96TS Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85037 Rev. 5, 22-Jan-01 www.vishay.com 9 (9)