BFR96TS
Vishay Semiconductors
www.vishay.com
Rev. 5, 22-Jan-01 1 (9)
Document Number 85037
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
94 9308
1
3
2
BFR96TS Marking: BFR96TS
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
13623
Absolute Maximum Ratings
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 15 V
Emitter-base voltage VEBO 2.5 V
Collector current IC100 mA
Total power dissipation Tamb 45
°
C Ptot 700 mW
Junction temperature Tj150
°
C
Storage temperature range Tstg –65 to +150
°
C
Maximum Thermal Resistance
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3
plated with 35
m
m Cu RthJA 150 K/W
BFR96TS
Vishay Semiconductors
www.vishay.com Rev. 5, 22-Jan-01
2 (9) Document Number 85037
Electrical DC Characteristics
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 20 V, VBE = 0 ICES 100
m
A
Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA
Emitter-base cut-off current VEB = 2.5 V, IC = 0 IEBO 10
m
A
Collector-emitter breakdown voltage IC = 5 mA, IB = 0 V(BR)CEO 15 V
DC forward current transfer ratio VCE = 10 V, IC = 70 mA hFE 25 75 150
Electrical AC Characteristics
Tamb = 25
_
C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 10 V, IC = 70 mA, f = 500 MHz fT5 GHz
Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.84 pF
Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce 0.4 pF
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 3.5 pF
Noise figure VCE = 10 V, IC = 70 mA, ZS = 50
W
,
f = 500 MHz F 3.3 dB
VCE = 10 V, IC = 70 mA, ZS = 50
W
,
f = 800 MHz F 4.0 dB
Power gain VCE = 10 V, IC = 70 mA, ZS = 50
W
,
ZL = ZLopt, f = 800 MHz Gpe 11.5 dB
Linear output voltage – two
tone intermodulation test VCE = 10 V, IC = 70 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
W
V1 = V2500 mV
Third order intercept point VCE = 10 V, IC = 70 mA, f = 800 MHz IP337 dBm
BFR96TS
Vishay Semiconductors
www.vishay.com
Rev. 5, 22-Jan-01 3 (9)
Document Number 85037
Common Emitter S–Parameters
Z0 = 50
W,
Tamb = 25
_
C, unless otherwise specified
S11 S21 S12 S22
VCE/V IC/mA f/MHz LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG
deg deg deg deg
100 0.691 –68.6 11.94 137.4 0.044 59.4 0.807 –28.82
300 0.552 –135.5 6.04 100.7 0.071 46.5 0.521 –45.0
500 0.518 –162.6 3.85 84.4 0.087 49.4 0.453 –51.6
800 0.499 173.8 2.47 68.1 0.114 55.7 0.444 –63.0
5 1000 0.488 162.5 1.99 59.7 0.136 58.7 0.458 –71.3
1200 0.477 152.5 1.68 52.3 0.161 60.2 0.478 –79.3
1500 0.459 139.2 1.37 43.1 0.203 60.5 0.515 –91.2
1800 0.446 125.8 1.15 34.7 0.247 59.0 0.553 –102.4
2000 0.427 118.9 1.05 29.9 0.272 57.6 0.577 –109.4
100 0.538 –92.3 17.08 126.6 0.035 57.6 0.672 –38.9
300 0.465 –152.7 7.31 94.9 0.060 57.1 0.389 –51.7
500 0.452 –173.7 4.51 81.7 0.085 61.7 0.341 –57.7
800 0.444 167.6 2.87 67.7 0.125 64.1 0.343 –69.2
5 10 1000 0.436 157.3 2.31 60.3 0.153 64.0 0.359 –77.5
1200 0.429 148.6 1.96 53.5 0.182 63.0 0.379 –85.2
1500 0.413 136.4 1.59 44.7 0.227 60.3 0.415 –96.2
1800 0.403 124.0 1.35 36.5 0.271 57.0 0.451 –106.4
2000 0.387 116.8 1.24 31.8 0.294 54.8 0.474 –112.6
100 0.387 –134.8 22.79 112.9 0.024 65.1 0.467 –52.1
300 0.401 –172.7 8.44 89.5 0.055 71.8 0.255 –60.2
500 0.400 174.0 5.13 79.0 0.088 72.5 0.234 –67.0
800 0.401 160.7 3.25 67.1 0.137 69.9 0.249 –79.7
30 1000 0.392 152.5 2.61 60.5 0.170 67.7 0.269 –87.9
1200 0.390 144.5 2.21 54.2 0.202 64.8 0.291 –95.2
1500 0.375 133.8 1.81 46.1 0.249 60.2 0.326 –105.1
1800 0.365 121.9 1.54 38.3 0.293 55.6 0.362 –113.7
2000 0.351 115.4 1.41 33.6 0.315 52.7 0.383 –119.0
BFR96TS
Vishay Semiconductors
www.vishay.com Rev. 5, 22-Jan-01
4 (9) Document Number 85037
S11 S21 S12 S22
VCE/V IC/mA f/MHz LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG
deg deg deg deg
100 0.370 –150.0 23.94 109.0 0.022 69.6 0.399 –55.7
300 0.395 –177.8 8.62 87.9 0.055 75.4 0.221 –62.3
500 0.396 171.3 5.23 78.1 0.090 74.8 0.208 –69.7
800 0.395 159.1 3.30 66.7 0.140 71.1 0.229 –82.8
50 1000 0.389 150.9 2.66 60.2 0.173 68.2 0.250 –90.8
1200 0.386 143.3 2.25 54.0 0.206 65.1 0.273 –98.0
1500 0.373 133.2 1.83 45.8 0.253 60.1 0.308 –107.5
1800 0.363 121.7 1.56 38.2 0.297 55.4 0.343 –115.7
5
2000 0.348 115.4 1.43 33.5 0.319 52.5 0.364 –120.8
5
100 0.374 –157.4 24.17 107.0 0.021 73.0 0.364 –56.8
300 0.397 179.7 8.60 87.1 0.055 77.4 0.206 –62.5
500 0.399 170.0 5.19 77.7 0.090 75.7 0.197 –70.3
800 0.398 158.4 3.29 66.2 0.141 71.6 0.221 –83.6
70 1000 0.394 150.3 2.65 59.8 0.175 68.6 0.243 –91.7
1200 0.389 143.3 2.24 53.5 0.207 65.3 0.267 –98.8
1500 0.378 132.8 1.82 45.4 0.255 60.3 0.303 –108.2
1800 0.368 121.7 1.55 37.7 0.299 55.4 0.338 –116.3
2000 0.355 114.9 1.42 32.9 0.321 52.5 0.359 –121.3
100 0.710 –62.3 12.15 140.0 0.036 61.8 0.844 –23.2
300 0.542 –129.2 6.46 103.2 0.061 48.7 0.591 –36.7
500 0.497 –157.8 4.14 86.6 0.075 51.4 0.528 –42.4
800 0.479 177.3 2.66 70.2 0.099 58.2 0.519 –52.7
5 1000 0.464 165.3 2.14 61.8 0.118 61.7 0.533 –60.5
1200 0.454 155.0 1.81 54.5 0.141 63.7 0.550 –68.3
1500 0.438 141.0 1.45 45.0 0.178 64.5 0.585 –79.8
1800 0.427 127.6 1.23 36.5 0.219 63.7 0.623 –91.0
10
2000 0.410 119.7 1.11 31.8 0.244 62.4 0.646 –98.1
10
100 0.544 –83.4 17.99 129.3 0.029 60.1 0.722 –31.2
300 0.436 –146.3 7.94 96.9 0.052 58.8 0.463 –40.3
500 0.417 –169.2 4.94 83.4 0.073 63.5 0.419 –45.2
800 0.410 170.8 3.14 69.6 0.109 66.4 0.419 –55.8
10 1000 0.397 160.5 2.52 62.1 0.134 66.8 0.433 –63.6
1200 0.394 151.1 2.13 55.5 0.160 66.1 0.450 –71.3
1500 0.384 139.1 1.73 46.6 0.201 63.8 0.483 –82.5
1800 0.372 125.9 1.46 38.1 0.241 61.1 0.520 –93.0
2000 0.357 118.6 1.33 33.4 0.264 59.0 0.542 –99.6
BFR96TS
Vishay Semiconductors
www.vishay.com
Rev. 5, 22-Jan-01 5 (9)
Document Number 85037
S11 S21 S12 S22
VCE/V IC/mA f/MHz LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG LIN
MAG ANG
deg deg deg deg
100 0.356 –122.3 24.66 115.3 0.021 66.0 0.525 –40.2
300 0.351 –167.1 9.31 90.0 0.048 72.5 0.333 –42.5
500 0.349 178.4 5.65 80.5 0.077 73.6 0.313 –48.0
800 0.351 164.4 3.59 68.7 0.121 71.6 0.323 –60.0
30 1000 0.348 155.5 2.88 62.2 0.150 69.7 0.340 –68.3
1200 0.343 147.4 2.44 56.0 0.179 67.3 0.358 –76.2
1500 0.334 136.6 1.97 47.6 0.222 63.2 0.390 –87.2
1800 0.328 124.7 1.68 39.6 0.262 59.1 0.426 –97.0
2000 0.312 117.3 1.53 35.0 0.283 56.5 0.447 –103.1
100 0.325 –137.8 26.14 110.8 0.019 69.8 0.457 –41.9
300 0.337 –172.8 9.52 89.1 0.049 75.9 0.299 –42.2
500 0.339 174.8 5.78 79.3 0.079 75.7 0.286 –48.2
800 0.343 162.2 3.65 68.1 0.123 72.6 0.300 –61.0
10 50 1000 0.337 154.3 2.94 61.8 0.153 70.1 0.318 –69.7
1200 0.334 146.6 2.48 55.6 0.183 67.4 0.338 –77.6
1500 0.327 136.1 2.02 47.5 0.226 63.0 0.370 –88.5
1800 0.322 124.1 1.70 39.6 0.267 58.7 0.406 –98.2
2000 0.311 118.2 1.55 34.6 0.288 55.9 0.428 –104.1
100 0.323 –145.1 26.39 108.4 0.018 72.0 0.424 –41.8
300 0.339 –175.6 9.46 88.1 0.049 76.9 0.287 –41.1
500 0.339 174.1 5.74 78.8 0.079 76.3 0.278 –47.7
800 0.344 162.0 3.62 67.5 0.124 72.8 0.295 –61.0
70 1000 0.341 153.8 2.92 61.1 0.154 70.4 0.313 –69.7
1200 0.340 146.2 2.46 55.0 0.184 67.6 0.333 –77.6
1500 0.333 135.6 1.99 46.8 0.227 63.0 0.367 –88.7
1800 0.326 14.2 1.68 39.0 0.268 58.6 0.403 –98.4
2000 0.318 117.8 1.54 34.0 0.289 55.9 0.425 –104.4
BFR96TS
Vishay Semiconductors
www.vishay.com Rev. 5, 22-Jan-01
6 (9) Document Number 85037
Typical Characteristics (Tamb = 25
_
C unless otherwise specified)
0
100
200
300
400
500
600
700
800
0 25 50 75 100 125 150
Tamb – Ambient Temperature ( °C )16780
P – Total Power Dissipation ( mW )
tot
Figure 1. Total Power Dissipation vs.
Ambient Temperature
0
1000
2000
3000
4000
5000
6000
7000
0 20406080100
IC – Collector Current ( mA )13597
f – Transition Frequency ( MHz )
T
VCE=10V
f=500MHz
Figure 2. Transition Frequency vs. Collector Current
0
0.4
0.8
1.2
1.6
2.0
0 4 8 12 16 20
VCB – Collector Base Voltage ( V )13598
C – Collector Base Capacitance ( pF )
cb
f=1MHz
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
0
1
2
3
4
5
0 10203040506070
IC – Collector Current ( mA )13599
F – Noise Figure ( dB )
f=800MHz
f=500MHz VCE=10V
ZS=50
W
Figure 4. Noise Figure vs. Collector Current
BFR96TS
Vishay Semiconductors
www.vishay.com
Rev. 5, 22-Jan-01 7 (9)
Document Number 85037
VCE = 10 V, IC = 70 mA , Z0 = 50
W
S11
13 542
–j0.2
–j0.5
–j
–j2
–j5
0
j0.2
j0.5
j
j2
j5
1
ÁÁÁ
ÁÁÁ
0.2
ÁÁ
ÁÁ
1
ÁÁ
ÁÁ
2
ÁÁ
ÁÁ
5
0.5
1.0
0.1
2.0 GHz
Figure 5. Input reflection coefficient
S21
13 544
0°
90°
180°
–90°
20 40
–150°
–120°–60°
–30°
120°
150°
60°
30°
2.0 GHz
1.0
0.3
Figure 6. Forward transmission coefficient
S12
13 543
0°
90°
180°
–90°
0.2 0.4
–150°
–120°–60°
–30°
120°
150°
60°
30°
2.0 GHz
1.0
0.1
Figure 7. Reverse transmission coefficient
S22
95 545
–j0.2
–j0.5
–j
–j2
–j5
0
j0.2
j0.5
j
j2
j5
1
ÁÁÁ
ÁÁÁ
0.2
ÁÁÁ
ÁÁÁ
0.5
ÁÁ
ÁÁ
1
ÁÁ
ÁÁ
2
ÁÁ
ÁÁ
5
2.0 GHz
1.0 0.1
0.3
Figure 8. Output reflection coefficient
BFR96TS
Vishay Semiconductors
www.vishay.com Rev. 5, 22-Jan-01
8 (9) Document Number 85037
Dimensions of BFR96TS in mm
96 12244
BFR96TS
Vishay Semiconductors
www.vishay.com
Rev. 5, 22-Jan-01 9 (9)
Document Number 85037
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423