S74 SGS-THOMSON MICROELECTRONICS BTA12 B/C BTB12 B/C STANDARD TRIACS FEATURES a HIGH SURGE CURRENT CAPABILITY se COMMUTATION : (dV/adt)c > 5 V/us a BTA Family : INSULATING VOLTAGE = 2500V(RMs) 8 (UL RECOGNIZED : 81734) hs DESCRIPTION The BTA/BTB12 B/C triac family are high perfor- mance glass passivated PNPN devices. A hy These parts are suitables for general purpose ap- G plications where high surge current capability is re- TO 220 AB quired. Application such as phase control and (Plastic) static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current BTA Te = 75C 12 A (360 conduction angie) BTB Te = 80C ITSM Non repetitive surge peak on-state current tp = 8.3 ms 125 A (Tj initial = 25C ) tp = 10 ms 120 12 2t value tp = 10 ms 72 A2s di/dt Critical rate of rise of on-state current Repetitive 10 Aus Gate supply :lG = 500mA dig/dt = 1A/us F = 50 Hz Non 50 Repetitive Tstg Storage and operating junction temperature range - 40 to + 150 i 07 Tj - 40 to+ 125 i 0 Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 230 C from case Symbol Parameter BTA / BTB12-... B/C Unit 400 600 700 800 VDRM Repetitive peak off-state voltage 400 600 700 800 v VRRM Tj = 125C July 1991 1/5 355BTA12 B/C / BTB12 B/C THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a}) | Junction to ambient 60 C/W Rth (j-c) DC | Junction to case for DC BTA 3.3 Ciw BTB 2.7 Ath (j-c) AC | Junction to case for 360 conduction angle BTA 2.5 Ciw ( F= 50 Hz) BTB 2.0 GATE CHARACTERISTICS (maximum values) PG (AV) = 1W so PGm = 40W (tp = 20 us) IGM =4A(tp=20us) VGM = 16V (tp = 20 ps). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suftix Unit 8B c IGT Vp=12V (DC) RL=332 Tj=25C I-11 MAX 50 25 mA IV MAX 100 50 VGT Vp=12V (DC) R_=330N Tj=25C 1-H-HIIV MAX 1.5 VGD Vb=VORM AL=3.3kQ Tj=110C 1--HI-IV MIN 0.2 v tgt Vp=VpRM_ Ig = 500mA Tj=25C | t-U-l-Iv. | TyP 2 us dig/dt = 3A/ps IL ig=1.2 IGT Tj=25C I-UI-IV TYP 40 20 mA NW 70 35 iH * lT= 500mA gate open Tj=25C MAX 50 25 mA VTm * ItM= 17A_ tp= 380pus Tj=25C MAX 15 Vv IDRM Vorm Rated Tj=25C MAX 0.01 mA IRRM VRRM Rated Tj=110C MAX 0.5 dvidt * Linear slope up to Vp=67%VDRM Tj=110C MIN 250 100 Vius gate open (dV/dt)e * | (di/dt)c = .3A/ms Tj=110C MIN 10 5 Vias * For either polarity of electrode Az voltage with reference to electrode Ai. 2s 356 G77 $&S-THOMSON YA isncnoruecrnomesBTA12 B/C / BTB12 B/C ORDERING INFORMATION Package / v BTA 400 (Insulated) 600 700 800 BTB 400 (Uninsulated) 600 700 800 Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (di/dt)c limitation) P (Ww) 16 180 14 4 val fat) 10 Ol: 1 Ql: 120 OQ: a: nH 1 (A) o o 412 3 4 6 6 7 6 9 10 11 12 Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (BTB). P (W) Tcase (C) 16 O c/w 14 ow 12 4 crew 1780 6 Crew 10 8 90 6 4 100 2[ Tamb (C) 0 110 0 20 40 60 80 100 120 140 f SGS-THOMSON VA imenczLecmmomes x [KL PK LOK | KK P< | oO x [KK LK XX TX TK LO Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (BTA). P (WwW) Tcase (C) 16 Rth=_ 0 c/w 14 2 Cw 12 4 c/w 1780 6C/w 10 8 90 100 Tamb (C) Oo NM FS DD 110 oO 20 40 60 80 100 120 140 Fig.4 : RMS on-state current versus case temperature. 'TRMs) (A) Tcase(C 0 0 10 20 30 40 50 60 70 80 90 100110120 3/5 357BTA12 B/C / BTB12 B/C Fig.5 : Thermal transient impedance junction to case and junction to ambient versus pulse duration. (Zth j-c : BTA version only) Zth ( C/W) 1.0E-01 TOE-03 10E-02 10E-01 10E+00 1.0E+01 10+02 10E-03 Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. its fA) Tj initial - 25C 100 80 60 40 20 Number of cycles 1 10 100 1000 Fig.9 : On-state characteristics (maximum values}. Vay (A) 1000 Tj initial 25C 100 Tj max 10 Vto = 0.9V Rt -0.0340 Vim (Vv) oO 1 2 3 4 5 4/5 358 ST Denson Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. (gt Tj] thi Tj] : IgtlTj-25C th Tj=25 C 2.5 2 Igt 1.6 Ty 9 =i Ty" SSC | | oer 0.5 T T Ti CC) 0 -40-90-20-10 0 10 20 30 40 60 60 70 60 90 100110 Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t < 10ms, and corresponding value of It. IgufA). It (A's) Tj initial = 25C 'TsM 100BTA12 B/C / BTB12 B/C PACKAGE MECHANICAL DATA (in millimeters) TO 220 AB Plastic 14.7 max 1H 2.4%0.3 Ay Ag G Cooling method : by conduction (method C) Marking : type number Weight : 2g Polarity NA S/S SGS-THOMSON SE inicRoELecrnoMes 359