© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 14
1Publication Order Number:
MBR2535CT/D
MBR2535CTG,
MBR2545CTG
SWITCHMODE
Power Rectifiers
The MBR2535CTG/45CTG series uses the Schottky Barrier
principle with a platinum barrier metal. These state−of−the−art
devices have the following features:
Features
•Guardring for Stress Protection
•Low Forward Voltage
•175°C Operating Junction Temperature
•These are Pb−Free Devices*
Mechanical Characteristics
•Case: Epoxy, Molded
•Epoxy Meets UL 94 V−0 @ 0.125 in
•Weight: 1.9 grams (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220AB
CASE 221A
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
35 and 45 VOLTS
1
3
2, 4
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
B25x5 = Device Code
x = 3 or 4
G = Pb−Free Package
AKA = Diode Polarity
AY WW
B25x5G
AKA
Device Package Shipping
ORDERING INFORMATION
MBR2535CTG TO−220
(Pb−Free)
50 Units/Rail
MBR2545CTG TO−220
(Pb−Free)
50 Units/Rail
http://onsemi.com
MBR2535CTG, MBR2545CTG
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR2535CTG
MBR2545CTG
VRRM
VRWM
VR35
45
V
Average Rectified Forward Current
(Rated VR, TC = 160°C)
Per Device
Per Diode
IF(AV)
30
15
A
Peak Repetitive Forward Current
per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 150°C)
IFRM 30
A
Non−Repetitive Peak Surge Current per Diode Leg
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
IFSM 150
A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature (Note 1) TJ−65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s
ESD Ratings:
Machine Model = C
Human Body Model = 3B
ESD
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Value Unit
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient (Note 2)
RJC
RJA
1.5
50
°C/W
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS (Per Diode)
Symbol Characteristic Condition Min Typ Max Unit
VFInstantaneous Forward Voltage
(Note 3)
IF = 15 Amp, TJ = 25°C
IF = 15 Amp, TJ = 125°C
IF = 30 Amp, TJ = 25°C
IF = 30 Amp, TJ = 125°C
−
−
−
−
−
0.50
−
0.65
0.62
0.57
0.82
0.72
V
IRInstantaneous Reverse Current
(Note 3)
Rated dc Voltage, TJ = 25°C
Rated dc Voltage, TJ = 125°C
−
−
−
9.0
0.2
25
mA
3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%.
MBR2535CTG, MBR2545CTG
http://onsemi.com
3
110
TC, CASE TEMPERATURE (°C)
20
8.0
4.0
0
TA, AMBIENT TEMPERATURE (°C)
200
48
24
16
8.0
0
40
8.0 160
IF, AVERAGE FORWARD CURRENT (AMPS)
32
16
12
8.0
4.0
0
12
I
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
120 130 160 180 60 80 180
P
20 4024
28
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
4.0 28 32 36
20
24
SQUARE WAVE
dc
SQUARE WAVE
dc
16
12
24
48
28 28
20
12
4.0
100 120 140
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
RATED VR APPLIED
SQUARE WAVE
dc
RATED VOLTAGE APPLIED
RJC = 1.5°C/W
RJA = 16°C/W
(With TO-220 Heat Sink)
RJA = 60°C/W
(No Heat Sink)
SQUARE WAVE
dc
TJ = 125°C
(CAPACITATIVELOAD)
IPK
IAV
+5.0
10
20
(RESISTIVELOAD)
IPK
IAV
+
Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg
0.60
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1000
10
VR, REVERSE VOLTAGE (VOLTS)
0
0.2
0.04
0.02
0.002
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
1.0
0.2 0.4 0.8 10 20 30 40
0.1
0.4
1.0
0.1
1.0 50
, REVERSE CURRENT (mA)
R
4.0
2.0
10
20
100
40
200
TJ = 125°C
150°C
25°C
TJ = 150°C
125°C
100°C
100
0.01
0.004
25°C
75°C
1.61.2 1.4 1.8
Figure 3. Current Derating, Per Device Figure 4. Current Derating, Per Device
Figure 5. Forward Power Dissipation
140 150 170
32
36
40
44
160
32
36
40
44
MBR2535CTG, MBR2545CTG
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
MBR2535CT/D
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