TGA2533-SM Ku-Band Power Amplifier Applications Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 12.5 - 15.5 GHz TOI: 43dBm Power: 34.5 dBm Psat, 33 dBm P1dB Gain: 27 dB Return Loss: 13 dB NF: 6 dB Integrated Power Detector Bias: Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical Package Dimensions: 5.0 x 5.0 x 0.85 mm 24 The TriQuint TGA2533-SM is a Ku-Band Packaged Power Amplifier. The TGA2533-SM operates from 12.5 to 15.5 GHz and is designed using TriQuint's power pHEMT production process. The TGA2533-SM typically provides 43dBm of TOI at 20dBm Pout/Tone, 33 dBm of output power at 1dB gain compression, and the small signal gain is 27 dB. The TGA2533-SM is available in a low-cost, surface mount 24 lead 5x5 QFN package and is ideally suited for Point-to-Point Radio, and Ku-Band VSAT Ground Terminal. Lead-free and RoHS compliant. 21 22 20 19 1 18 2 17 3 16 4 15 5 14 6 13 7 General Description 23 8 10 9 11 12 Pin Configuration Pin # Symbol 1, 2, 3, 5, 6, 9, 12, 13, 14, 15, 17 4 7, 8, 23, 24 16 10, 11, 20, 21 18 19 22 N/C RF IN Vg RF OUT Vd Vref Vdet GND Ordering Information Evaluation Boards are available upon request. Part No. TGA2533-SM TGA2533-XCC-500-SM ECCN Description EAR99 Ku-band Power Amplifier TGA2533-SM T/R size = 1000 pieces on a 7" reel. TGA2533-XCC-500-SM T/R size = 500 pieces on a 7" reel. Data Sheet: Rev G 02/22/16 (c) 2016 TriQuint Semiconductor, Inc. - 1 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2533-SM Ku-Band Power Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Drain Voltage,Vd Gate Voltage,Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW, 50,T = 25C Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature +8 V -3 to 0 V 2.24 A -11 to 90 mA 17.9 W 27 dBm 200 oC 260 oC -40 to 150 oC Vd Id Id_drive (Under RF Drive) Vg Min Typical 6 1.3 Max Units 7.5 V A 1.7 A -0.55 V Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C, Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical. Parameter Min Operational Frequency Range Gain 12.7 - 13.3 GHz 14.4 - 15.4 GHz Input Return Loss Output Return Loss Output Power @ Saturation Output Power @ 1 dB Gain Compression 12.7 - 13.3 GHz 14.4 - 15.4 GHz Output TOI @ Pout/Tone = 20 dBm 12.7 - 13.3 GHz 14.4 - 15.4 GHz Noise Figure Gain Temperature Coefficient Power Temperature Coefficient 12.5 24 25 Data Sheet: Rev G 02/22/16 (c) 2016 TriQuint Semiconductor, Inc. Typical Max Units 27 27 13 13 34.5 GHz dB dB dB dB dBm 32 31 33 33 dBm dBm 39.5 39.5 43 43 7 -0.033 -0.005 - 2 of 13 - 15.5 dBm dBm dB dB/C dBm/C Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2533-SM Ku-Band Power Amplifier Specifications Thermal and Reliability Information Parameter Condition Rating Thermal Resistance, JC, measured to back of package Tbase = 85 C Tbase = 85 C, Vd = 6 V, Id = 1.3 A, Pdiss = 7.8 W Tbase = 85 C, Vd = 6 V, Id = 1.7 A, Pout = 34.5 dBm, Pdiss = 7.38 W JC = 5.76 C/W Tch = 130 C Tm = 5.9 E+6 Hours Tch = 128 C Tm = 7.2 E+6 Hours Channel Temperature (Tch), and Median Lifetime (Tm) Channel Temperature (Tch), and Median Lifetime (Tm) Under RF Drive Median Lifetime (Tm) vs. Channel Temperature (Tch) Median Lifetime, Tm, (Hours) 1.E+14 1.E+13 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 FET3 1.E+04 25 50 75 100 125 150 175 200 Channel Temperature, Tch, (C) Data Sheet: Rev G 02/22/16 (c) 2016 TriQuint Semiconductor, Inc. - 3 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2533-SM Ku-Band Power Amplifier 29 28 27 26 25 24 23 22 21 20 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 Gain IRL ORL 12.5 13 13.5 14 14.5 15 15.5 16 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 Gain IRL ORL 10 11 12 13 Frequency (GHz) Power vs. Frequency 12.5 13 Output Power (dBm) Power (dBm, Gain (dB) 13.5 14 16 17 18 Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C Psat P1dB 12 15 Power, Gain, Id vs. Input Power @ 14 GHz Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C 35 34 33 32 31 30 29 28 27 26 25 14 Frequency (GHz) 14.5 15 15.5 36 34 32 30 28 26 24 22 20 18 16 16 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 Power Gain Id -10 -8 -6 -4 -2 Frequency (GHz) 0 2 4 6 Id (A) 12 30 28 26 24 22 20 18 16 14 12 10 Return Loss (dB) S-Parameters vs. Frequency Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C Gain (dB) S-Parameters vs. Frequency Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C Return Loss (dB) Gain (dB) Typical Performance 8 10 12 14 Input Power (dBm) Power Detector vs. Pout vs. Frequency TOI vs. Frequency vs. Pout/Tone Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C 45 10 Output TOI (dBm) 44 Vdiff (V) 1 12.7GHz 13.3GHz 14.4GHz 15.4GHz 0.1 43 Pout/Tone = 21dBm Pout/Tone = 20dBm Pout/Tone = 19dBm 42 41 40 39 38 0.01 -5 0 5 10 15 20 25 30 12 35 Output Power (dBm) Data Sheet: Rev G 02/22/16 (c) 2016 TriQuint Semiconductor, Inc. 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) - 4 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2533-SM Ku-Band Power Amplifier IM3 vs. Pout/Tone vs. Frequency IM5 vs. Pout/Tone vs. Frequency Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 12.7GHz 13.3GHz 14.4GHz 15.4GHz 14 16 18 20 IM5 (dBc) IM3 (dBc) Typical Performance 22 24 26 -30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 12.7GHz 13.30GHz 14.4GHz 15.4GHz 14 28 16 12.5 13 13.5 14 14.5 15 15.5 29 28 27 26 25 24 23 22 21 20 16 12 12.5 13 13.5 14 14.5 15 Frequency (GHz) Saturated Power vs. Frequency vs. Id TOI vs. Frequency vs. Id OTOI @ 20dBm Pout/Tone (dBm) 6V 1.3A 6V 1.2A 6V 1.1A 12.5 13 13.5 14 14.5 15 15.5 16 (c) 2016 TriQuint Semiconductor, Inc. 15.5 16 15.5 16 Vd = 6 V, Id = 1.1 - 1.3 A, +25 0C 45 44 43 42 6V 1.3A 6V 1.2A 6V 1.1A 41 40 39 38 12 Frequency (GHz) Data Sheet: Rev G 02/22/16 28 6V 1.3A 6V 1.2A 6V 1.1A Frequency (GHz) 35 34 33 32 31 30 29 28 27 26 25 26 Vd = 6 V, Id = 1.1 - 1.3 A, +25 0C Gain dB Noise Figure (dB) 24 Gain vs. Frequency vs. Id Vd = 6 V, Id = 1.1 - 1.3 A, +25 0C Psat (dBm) 22 Noise Figure vs. Frequency 10 9 8 7 6 5 4 3 2 1 0 12 20 Pout/Tone (dBm) Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C 12 18 Pout/Tone (dBm) 12.5 13 13.5 14 14.5 15 Frequency (GHz) - 5 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2533-SM Ku-Band Power Amplifier Typical Performance Gain vs. Frequency vs. Temperature Psat vs. Frequency vs. Temperature 31 30 29 28 27 26 25 24 23 22 Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical Psat (dBm) Gain (dB) Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical -40C +25C +85C 12 12.5 13 13.5 14 14.5 15 15.5 36 35 34 33 32 31 30 29 28 27 26 -40C +25C +85C 12 16 12.5 13 Frequency (GHz) 13.5 14 14.5 15 15.5 16 Frequency (GHz) P1dB vs. Frequency vs. Temperature P1dB (dBm) Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical 36 35 34 33 32 31 30 29 28 27 26 -40C +25C +85C 12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) Data Sheet: Rev G 02/22/16 (c) 2016 TriQuint Semiconductor, Inc. - 6 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2533-SM Ku-Band Power Amplifier Application Circuit C1 100 pF C4 1 uF Vdet 24 23 22 21 20 R1 100K Ohms 19 + _ Vdiff R2 18 1 Vref 2533 YYWW XXXX 2 3 4 J1 RF IN 5 6 7 8 9 10 11 6V 100K Ohms 17 16 J2 RF OUT Vd = 6 V Id = 1.3 A 15 14 13 12 Vg = -0.55 V Typical C2 100 pF C5 1 uF C3 100 pF C6 1 uF Vg can be biased from either side (pins 7 and 8 or pins 23 and 24), and the non-biased side can be left open. Vd must be biased from both sides (pins 10, 11, 20, and 21). Bias-up Procedure Bias-down Procedure Vg set to -1.5 V Vd set to +6 V Adjust Vg more positive until quiescent Id is 1.3A. This will be ~ Vg = -0.55 V Apply RF signal to RF Input Turn off RF supply Reduce Vg to -1.5V. Ensure Id ~ 0 mA Turn Vd to 0 V Turn Vg to 0 V The TGA2533-SM will be marked with the "2533" designator and a lot code marked below the part designator. The "YY" represents the last two digits of the year the part was manufactured, the "WW" is the work week, and the "XXXX" is an autogenerated number. Data Sheet: Rev G 02/22/16 (c) 2016 TriQuint Semiconductor, Inc. - 7 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2533-SM Ku-Band Power Amplifier Pin Description 24 23 21 22 20 19 1 18 2 17 16 3 25 4 15 5 14 6 13 7 8 Pin 1, 2, 3, 5, 6, 13, 14, 15, 17 4 9 10 11 12 Symbol Description N/C No internal connection; must be grounded on PCB RF IN Input, matched to 50 ohms Gate voltage. ESD protection included; Bias network is required; can be biased from either side (pins 7 and 8 or pins 23 and 24), and non-biased side can be left opened; see Application Circuit on page 7 as an example. No internal connection. Can be grounded on PCB or left open Drain voltage. Bias network is required; must be biased from both sides; see Application Circuit on page 7 as an example. Output, matched to 50 ohms Reference diode output voltage. Detector diode output voltage. Varies with RF output power. Internal grounding; can be grounded on PCB or left open Backside Paddle. Multiple vias should be employed to minimize inductance and thermal resistance; see Mounting Configuration on page 11 for suggested footprint. 7, 8, 23, 24 Vg 9, 12 N/C 10, 11, 20, 21 Vd 16 18 19 22 RF OUT Vref Vdet GND 25 GND Data Sheet: Rev G 02/22/16 (c) 2016 TriQuint Semiconductor, Inc. - 8 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2533-SM Ku-Band Power Amplifier Applications Information PC Board Layout Top RF layer is 0.008" thick Rogers RO4003, r = 3.38. Metal layers are 1-oz copper. Microstrip 50 line detail: width = 0.0175". The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, refer to the TGA2533-SM Product Information page. Vref Vd NC Vdet C4 R1 R2 C1 C2 GND GND GND GND C6 Vd NC NC Vg C5 C3 Bill of Material Ref Des Value C1, C2, C3 100 pF C4, C5, C6 1 uF R1, R2 Ohms Data Sheet: Rev 100K G 02/22/16 Description Manufacturer Cap, 0402, 50V, 5%, COG Cap, 0603, 25V, 5%, X5R Res, 0603, 1/16W, 5%,- SMD 9 of 13 - various various various Disclaimer: Subject to change without notice (c) 2016 TriQuint Semiconductor, Inc. Part Number Connecting the Digital World to the Global Network(R) TGA2533-SM Ku-Band Power Amplifier Mechanical Information Package Information and Dimensions All dimensions are in millimeters. This package is lead-free/RoHS-compliant with a copper alloy base (CDA194), and the plating material on the leads is 100% matte Sn. It is compatible with both lead-free (maximum 260 C reflow temperature) and tin-lead (maximum 245 C reflow temperature) soldering processes. Data Sheet: Rev G 02/22/16 (c) 2016 TriQuint Semiconductor, Inc. - 10 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2533-SM Ku-Band Power Amplifier Mechanical Information Mounting Configuration All dimensions are in millimeters (inches). Notes: 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. 2. Ground / thermal vias are critical for the proper performance of this device. Vias have a final plated thru diameter of .40 mm (.016"). .675 .675 Tape and Reel Information Tape and reel specifications for this part are also available on the TriQuint website in the "Application Notes" section. Standard T/R size = 500 pieces on a 7 x 0.5" reel. CARRIER AND COVER TAPE DIMENSIONS Part Feature Cavity Length Width Depth Pitch Cavity to Perforation Length Direction Cavity to Perforation Width Direction Width Width Distance Between Centerline Cover Tape Carrier Tape Data Sheet: Rev G 02/22/16 (c) 2016 TriQuint Semiconductor, Inc. - 11 of 13 - Symbol Size (in) Size (mm) A0 B0 K0 P1 0.207 0.207 0.043 0.315 5.25 5.25 1.10 8.00 P2 0.079 2.00 F 0.217 5.50 C W 0.374 0.472 9.5 12.0 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2533-SM Ku-Band Power Amplifier Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260C ESD Rating: Value: Test: Standard: This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). Class 0 200 V and < 250 V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating Level MSL1 at +260 C convection reflow The part is rated Moisture Sensitivity Level MSL1 at 260C per JEDEC standard IPC/JEDEC J-STD-020. This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free ECCN US Department of Commerce: EAR99 Recommended Soldering Temperature Profile Data Sheet: Rev G 02/22/16 (c) 2016 TriQuint Semiconductor, Inc. - 12 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R) TGA2533-SM Ku-Band Power Amplifier Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@tqs.com Tel: Fax: +1.972.994.8465 +1.972.994.8504 For technical questions and application information: Email: info-networks@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev G 02/22/16 (c) 2016 TriQuint Semiconductor, Inc. - 13 of 13 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)