TGA2533-SM
Ku-Band Power Amplifier
Data Sheet: Rev G 02/22/16
- 1 of 13 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Applications
Point-to-Point Radio
Ku-Band VSAT
QFN 5x5mm 24L
Product Features
Functional Block Diagram
Frequency Range: 12.5 15.5 GHz
TOI: 43dBm
Power: 34.5 dBm Psat, 33 dBm P1dB
Gain: 27 dB
Return Loss: 13 dB
NF: 6 dB
Integrated Power Detector
Bias: Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical
Package Dimensions: 5.0 x 5.0 x 0.85 mm
General Description
Pin Configuration
The TriQuint TGA2533-SM is a Ku-Band Packaged
Power Amplifier. The TGA2533-SM operates from 12.5
to 15.5 GHz and is designed using TriQuint’s power
pHEMT production process.
The TGA2533-SM typically provides 43dBm of TOI at
20dBm Pout/Tone, 33 dBm of output power at 1dB gain
compression, and the small signal gain is 27 dB.
The TGA2533-SM is available in a low-cost, surface
mount 24 lead 5x5 QFN package and is ideally suited for
Point-to-Point Radio, and Ku-Band VSAT Ground
Terminal.
Lead-free and RoHS compliant.
Evaluation Boards are available upon request.
Pin #
1, 2, 3, 5, 6, 9, 12, 13, 14,
15, 17
N/C
4
RF IN
7, 8, 23, 24
Vg
16
RF OUT
10, 11, 20, 21
Vd
18
Vref
19
Vdet
22
GND
Ordering Information
Part No.
ECCN
Description
TGA2533-SM
EAR99
Ku-band Power
Amplifier
TGA2533-XCC-500-SM
TGA2533-SM T/R size = 1000 pieces on a 7reel.
TGA2533-XCC-500-SM T/R size = 500 pieces on a 7” reel.
1
2
3
9
8
7
4
5
6
12
11
10
18
17
16
15
14
13
22
23
24 19
20
21
TGA2533-SM
Ku-Band Power Amplifier
Data Sheet: Rev G 02/22/16
- 2 of 13 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Specifications
Absolute Maximum Ratings
Parameter
Rating
Drain Voltage,Vd
+8 V
Gate Voltage,Vg
-3 to 0 V
Drain Current, Id
2.24 A
Gate Current, Ig
-11 to 90 mA
Power Dissipation, Pdiss
17.9 W
RF Input Power, CW, 50Ω,T = 25ºC
27 dBm
Channel Temperature, Tch
200 oC
Mounting Temperature (30 Seconds)
260 oC
Storage Temperature
-40 to 150 oC
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Recommended Operating Conditions
Parameter
Min
Typical
Max
Units
Vd
6
7.5
V
Id
1.3
A
Id_drive (Under RF
Drive)
1.7
A
Vg
-0.55
V
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25ºC, Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical.
Parameter
Min
Typical
Max
Units
Operational Frequency Range
12.5
15.5
GHz
Gain 12.7 13.3 GHz
14.4 15.4 GHz
24
25
27
27
dB
dB
Input Return Loss
13
dB
Output Return Loss
13
dB
Output Power @ Saturation
34.5
dBm
Output Power @ 1 dB Gain Compression
12.7 13.3 GHz
14.4 15.4 GHz
32
31
33
33
dBm
dBm
Output TOI @ Pout/Tone = 20 dBm
12.7 13.3 GHz
14.4 15.4 GHz
39.5
39.5
43
43
dBm
dBm
Noise Figure
7
dB
Gain Temperature Coefficient
-0.033
dB/°C
Power Temperature Coefficient
-0.005
dBm/°C
TGA2533-SM
Ku-Band Power Amplifier
Data Sheet: Rev G 02/22/16
- 3 of 13 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Specifications
Thermal and Reliability Information
Parameter
Condition
Rating
Thermal Resistance, θJC, measured to back of package
Tbase = 85 °C
θJC = 5.76 °C/W
Channel Temperature (Tch), and Median Lifetime (Tm)
Tbase = 85 °C, Vd = 6 V, Id = 1.3 A,
Pdiss = 7.8 W
Tch = 130 °C
Tm = 5.9 E+6 Hours
Channel Temperature (Tch), and Median Lifetime (Tm)
Under RF Drive
Tbase = 85 °C, Vd = 6 V, Id = 1.7 A,
Pout = 34.5 dBm, Pdiss = 7.38 W
Tch = 128 °C
Tm = 7.2 E+6 Hours
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.E+12
1.E+13
1.E+14
25 50 75 100 125 150 175 200
Median Lifetime, Tm, (Hours)
Channel Temperature, Tch, C)
Median Lifetime (Tm) vs. Channel Temperature (Tch)
FET3
TGA2533-SM
Ku-Band Power Amplifier
Data Sheet: Rev G 02/22/16
- 4 of 13 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
25
26
27
28
29
30
31
32
33
34
35
12 12.5 13 13.5 14 14.5 15 15.5 16
Output Power (dBm)
Frequency (GHz)
Power vs. Frequency
Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C
Psat
P1dB
38
39
40
41
42
43
44
45
12 12.5 13 13.5 14 14.5 15 15.5 16
Output TOI (dBm)
Frequency (GHz)
TOI vs. Frequency vs. Pout/Tone
Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C
Pout/Tone = 21dBm
Pout/Tone = 20dBm
Pout/Tone = 19dBm
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
16
18
20
22
24
26
28
30
32
34
36
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14
Id (A)
Power (dBm, Gain (dB)
Input Power (dBm)
Power, Gain, Id vs. Input Power @ 14 GHz
Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C
Power
Gain
Id
0.01
0.1
1
10
-5 0 5 10 15 20 25 30 35
Vdiff (V)
Output Power (dBm)
Power Detector vs. Pout vs. Frequency
Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C
12.7GHz
13.3GHz
14.4GHz
15.4GHz
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
20
21
22
23
24
25
26
27
28
29
12 12.5 13 13.5 14 14.5 15 15.5 16
Return Loss (dB)
Gain (dB)
Frequency (GHz)
S-Parameters vs. Frequency
Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C
Gain
IRL
ORL
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
10
12
14
16
18
20
22
24
26
28
30
10 11 12 13 14 15 16 17 18
Return Loss (dB)
Gain (dB)
Frequency (GHz)
S-Parameters vs. Frequency
Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C
Gain
IRL
ORL
TGA2533-SM
Ku-Band Power Amplifier
Data Sheet: Rev G 02/22/16
- 5 of 13 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
14 16 18 20 22 24 26 28
IM3 (dBc)
Pout/Tone (dBm)
IM3 vs. Pout/Tone vs. Frequency
Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C
12.7GHz
13.3GHz
14.4GHz
15.4GHz
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
14 16 18 20 22 24 26 28
IM5 (dBc)
Pout/Tone (dBm)
IM5 vs. Pout/Tone vs. Frequency
Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C
12.7GHz
13.30GHz
14.4GHz
15.4GHz
0
1
2
3
4
5
6
7
8
9
10
12 12.5 13 13.5 14 14.5 15 15.5 16
Noise Figure (dB)
Frequency (GHz)
Noise Figure vs. Frequency
Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical, +25 0C
20
21
22
23
24
25
26
27
28
29
12 12.5 13 13.5 14 14.5 15 15.5 16
Gain dB
Frequency (GHz)
Gain vs. Frequency vs. Id
Vd = 6 V, Id = 1.1 - 1.3 A, +25 0C
6V 1.3A
6V 1.2A
6V 1.1A
25
26
27
28
29
30
31
32
33
34
35
12 12.5 13 13.5 14 14.5 15 15.5 16
Psat (dBm)
Frequency (GHz)
Saturated Power vs. Frequency vs. Id
Vd = 6 V, Id = 1.1 - 1.3 A, +25 0C
6V 1.3A
6V 1.2A
6V 1.1A
38
39
40
41
42
43
44
45
12 12.5 13 13.5 14 14.5 15 15.5 16
OTOI @ 20dBm Pout/Tone (dBm)
Frequency (GHz)
TOI vs. Frequency vs. Id
Vd = 6 V, Id = 1.1 - 1.3 A, +25 0C
6V 1.3A
6V 1.2A
6V 1.1A
TGA2533-SM
Ku-Band Power Amplifier
Data Sheet: Rev G 02/22/16
- 6 of 13 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
22
23
24
25
26
27
28
29
30
31
12 12.5 13 13.5 14 14.5 15 15.5 16
Gain (dB)
Frequency (GHz)
Gain vs. Frequency vs. Temperature
Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical
-40C
+25C
+85C
26
27
28
29
30
31
32
33
34
35
36
12 12.5 13 13.5 14 14.5 15 15.5 16
Psat (dBm)
Frequency (GHz)
Psat vs. Frequency vs. Temperature
Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical
-40C
+25C
+85C
26
27
28
29
30
31
32
33
34
35
36
12 12.5 13 13.5 14 14.5 15 15.5 16
P1dB (dBm)
Frequency (GHz)
P1dB vs. Frequency vs. Temperature
Vd = 6 V, Id = 1.3 A, Vg = -0.55 V Typical
-40C
+25C
+85C
TGA2533-SM
Ku-Band Power Amplifier
Data Sheet: Rev G 02/22/16
- 7 of 13 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Application Circuit
Vg can be biased from either side (pins 7 and 8 or pins 23 and 24), and the non-biased side can be left open.
Vd must be biased from both sides (pins 10, 11, 20, and 21).
Bias-up Procedure
Bias-down Procedure
Vg set to -1.5 V
Turn off RF supply
Vd set to +6 V
Reduce Vg to -1.5V. Ensure Id ~ 0 mA
Adjust Vg more positive until quiescent Id is 1.3A.
This will be ~ Vg = -0.55 V
Turn Vd to 0 V
Apply RF signal to RF Input
Turn Vg to 0 V
The TGA2533-SM will be marked with the “2533” designator and a lot code marked below the part designator. The “YY”
represents the last two digits of the year the part was manufactured, the “WW” is the work week, and the “XXXX” is an auto-
generated number.
1
2
3
9
8
7
4
5
6
12
11
10
18
17
16
15
14
13
22
23
24 19
20
21 100K Ohms
R1
RF IN
J1
RF OUT
J2
Vg = -0.55 V
Typical
C2 1 uF100 pF C5 100 pF
C3
Vd = 6 V
Id = 1.3 A
C1 1 uF100 pF C4
100K Ohms
R2
+
_6 V
Vdiff
Vdet
Vref
1 uF
C6
2533
YYWW
XXXX
TGA2533-SM
Ku-Band Power Amplifier
Data Sheet: Rev G 02/22/16
- 8 of 13 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Pin Description
1
2
3
9
8
7
4
5
6
12
11
10
18
17
16
15
14
13
22
23
24 19
20
21
25
Pin
Symbol
Description
1, 2, 3, 5, 6, 13, 14,
15, 17
N/C
No internal connection; must be grounded on PCB
4
RF IN
Input, matched to 50 ohms
7, 8, 23, 24
Vg
Gate voltage. ESD protection included; Bias network is required; can be biased
from either side (pins 7 and 8 or pins 23 and 24), and non-biased side can be left
opened; see Application Circuit on page 7 as an example.
9, 12
N/C
No internal connection. Can be grounded on PCB or left open
10, 11, 20, 21
Vd
Drain voltage. Bias network is required; must be biased from both sides; see
Application Circuit on page 7 as an example.
16
RF OUT
Output, matched to 50 ohms
18
Vref
Reference diode output voltage.
19
Vdet
Detector diode output voltage. Varies with RF output power.
22
GND
Internal grounding; can be grounded on PCB or left open
25
GND
Backside Paddle. Multiple vias should be employed to minimize inductance
and thermal resistance; see Mounting Configuration on page 11 for suggested
footprint.
TGA2533-SM
Ku-Band Power Amplifier
Data Sheet: Rev G 02/22/16
- 9 of 13 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Applications Information
PC Board Layout
Top RF layer is 0.008” thick Rogers RO4003, єr = 3.38. Metal layers are 1-oz copper.
Microstrip 50 Ω line detail: width = 0.0175”.
The pad pattern shown has been developed and tested for optimized assembly at TriQuint
Semiconductor. The PCB land pattern has been developed to accommodate lead and
package tolerances. Since surface mount processes vary from company to company, careful
process development is recommended.
For further technical information, refer to the TGA2533-SM Product Information page.
C1
C4
C5
C6
R1
R2
Vg
GND
NC
Vd
GND
NC
Vd
Vref
NC
Vdet
GND
GND
C2
C3
Bill of Material
Ref Des
Value
Description
Manufacturer
Part Number
C1, C2, C3
100 pF
Cap, 0402, 50V, 5%, COG
various
C4, C5, C6
1 uF
Cap, 0603, 25V, 5%, X5R
various
R1, R2
100K Ohms
Res, 0603, 1/16W, 5%, SMD
various
TGA2533-SM
Ku-Band Power Amplifier
Data Sheet: Rev G 02/22/16
- 10 of 13 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Mechanical Information
Package Information and Dimensions
All dimensions are in millimeters.
This package is lead-free/RoHS-compliant with a copper alloy base (CDA194), and the plating material on the leads is 100%
matte Sn. It is compatible with both lead-free (maximum 260 °C reflow temperature) and tin-lead (maximum 245 °C reflow
temperature) soldering processes.
TGA2533-SM
Ku-Band Power Amplifier
Data Sheet: Rev G 02/22/16
- 11 of 13 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
.675
.675
Mechanical Information
Mounting Configuration
All dimensions are in millimeters (inches).
Notes:
1. A heatsink underneath the area of the PCB for the mounted device
is recommended for proper thermal operation.
2. Ground / thermal vias are critical for the proper performance of this device.
Vias have a final plated thru diameter of .40 mm (.016”).
Tape and Reel Information
Tape and reel specifications for this part are also available on the TriQuint website in the “Application Notes” section.
Standard T/R size = 500 pieces on a 7 x 0.5 reel.
CARRIER AND COVER TAPE DIMENSIONS
Part
Feature
Symbol
Size (in)
Size (mm)
Cavity
Length
A0
0.207
5.25
Width
B0
0.207
5.25
Depth
K0
0.043
1.10
Pitch
P1
0.315
8.00
Distance Between Centerline
Cavity to Perforation
Length Direction
P2
0.079
2.00
Cavity to Perforation
Width Direction
F
0.217
5.50
Cover Tape
Width
C
0.374
9.5
Carrier Tape
Width
W
0.472
12.0
TGA2533-SM
Ku-Band Power Amplifier
Data Sheet: Rev G 02/22/16
- 12 of 13 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Product Compliance Information
ESD Information
ESD Rating: Class 0
Value: ≥ 200 V and < 250 V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°C
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
MSL Rating
Level MSL1 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level MSL1 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce: EAR99
Recommended Soldering Temperature Profile
TGA2533-SM
Ku-Band Power Amplifier
Data Sheet: Rev G 02/22/16
- 13 of 13 -
Disclaimer: Subject to change without notice
© 2016 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com Tel: +1.972.994.8465
Email: info-sales@tqs.com Fax: +1.972.994.8504
For technical questions and application information:
Email: info-networks@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.