2003. 3. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC9013S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Excellent hFE Linearity.
·Complementary to KTC9012S.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC500 mA
Emitter Current IE-500 mA
Collector Power Dissipation PC*350 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1 μA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA
DC Current Gain hFE (Note) VCE=1V, IC=50mA 96 - 246
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Voltage VBE IC=100mA, VCE=1V 0.8 1.0 V
Transition Frequency fTVCE=6V, IC=20mA, f=100MHz 140 - - MHz
Collector Output Capacitance Cob VCB=6V, IE=0, f=1MHz - 7.0 - pF
Note : hFE Classification F:96～135, G:118～166, H:144～202, I:176～246
h Rank
Type Name
Marking
Lot No.
BC
FE
* PC: Package Mounted On 99.5% Alumina (10×8×0.6㎜)
2003. 3. 25 2/2
KTC9013S
Revision No : 1
CE(sat)
COLLECTOR CURRENT I (mA)
V - I
COLLECTOR-EMITTER SATURATION
C
I - V
CCE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
01
100
C
0
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN hFE
500
0.5
COLLECTOR CURRENT I (mA)
C
CFE
h - I
2345
200
300
400
500
I =0.1mA
0.5
1.0
2.0
3.0
4.0
6.0
B
COMMON EMITTER
Ta=25 C
1 3 10 30 1K100 300
10
30
50
100
300
COMMON EMITTER
Ta =100 C Ta =-25 C
Ta =25 C
V =6V
CE
CE
V =1V
C
VOLTAGE V (V)
CE(sat)
Ta =100 C
Ta =25 C
Ta =-25 C
Ta =100 C
Ta =-25 C
Ta =25 C
1
0.5
0.5 1 3 10 30 1K100 300
0.03
0.05
0.1
0.3
COMMON EMITTER
100
BASE CURRENT I (µA)
5
B
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
BBE
0.2 0.4 0.6 0.8 1.0 1.2
10
30
50
300
500
1K
2K COMMON
V =6V
CE
EMITTER
COLLECTOR POWER DISSIPATION
Pc (mW)
0
0
AMBIENT TEMPERATURE Ta
(
C
)
Pc - Ta
25 50 75 100 125 150 175
100
200
300
400
500
MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
Ta=25 C
1
2
1
2
I /I =10
CB
(LOW VOLTAGE REGION)
