2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor (-80V, -1A) 2SB1260 / 2SB1181 / 2SB1241 zExternal dimensions (Unit : mm) 2SB1260 2SB1181 (3) 0.4+0.1 -0.05 0.50.1 0.40.1 1.50.1 9.50.5 0.9 0.550.1 2.30.2 0.40.1 1.50.1 1.5 0.9 0.3 5.5+ -0.1 4.0 0.3 2.5+0.2 -0.1 (2) 0.50.1 0.650.1 0.75 (1) 2.3+-0.2 0.1 C0.5 2.5 1.5 +0.2 -0.1 1.60.1 6.50.2 5.1+-0.2 0.1 1.50.3 0.50.1 4.5+0.2 -0.1 1.00.2 zFeatures 1) Hight breakdown voltage and high current. BVCEO= -80V, IC = -1A 2) Good hFE linearty. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. 2.30.2 1.00.2 3.00.2 (1) (2) (3) zStructure Epitaxial planar type PNP silicon transistor (1) Base (2) Collector (3) Emitter Abbreviated symbol: BE ROHM : MPT3 EIAJ : SC-62 ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter 2SB1241 2.50.2 0.65Max. 0.50.1 (1) (2) 4.40.2 14.50.5 1.0 0.9 6.80.2 (3) 2.54 2.54 1.05 ROHM : ATV 0.450.1 (1) Emitter (2) Collector (3) Base Denotes h FE zAbsolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V IC -1 A (DC) ICP -2 Collector current 2SB1260 Collector power dissipation 2SB1241, 2SB1181 1 A (Pulse) 2 2 W 1 3 0.5 PC 2SB1181 10 W (Tc=25C) Junction temperature Tj 150 C Storage temperature Tstg -55 to 150 C 1 2SB1260 : Pw=20ms duty=1/2 2SB1241 : Single pulse, Pw=100ms 2 2SB1260 : When mounted on a 40x40x0.7 mm ceramic board. 3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Rev.C 1/3 2SB1260 / 2SB1181 / 2SB1241 Transistors zElectrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO -80 - - V IC= -50A Collector-emitter breakdown voltage BVCEO -80 - - V IC= -1mA Emitter-base breakdown voltage BVEBO -5 - - V IE= -50A ICBO - - -1 A VCB= -60V IEBO - - -1 A VEB= -4V VCE(sat) - - -0.4 V IC/IB= -500mA/ -50mA Parameter Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio 2SB1260, 2SB1181 hFE 2SB1241 Transition frequency 2SB1181 Output capacitance fT 2SB1260 Cob 2SB1181, 2SB1241 82 - 390 - 120 - 390 - - 100 - MHz - 20 - pF - 25 - pF Conditions VCE= -3V, IC= -0.1A VCE= -10V, IE=50mA, f=100MHz VCB= -10V IE=0A f=1MHz zPackaging specifications and hFE Package Taping Code Basic ordering unit (pieces) TL TV2 T100 2500 2500 1000 - Type hFE 2SB1260 PQR - 2SB1241 QR - 2SB1181 PQR - - - hFE values are classified as follows : Item P Q R hFE 82 to 180 120 to 270 180 to 390 Ta=25C VCE= -5V -100 -10 -1 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics -1.0 Ta=25C -4.5mA -0.8 -4mA -3.5mA -0.6 -3mA -2.5mA -0.4 -2mA -1.5mA -0.2 -1mA -0.5mA IB=0mA 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics 1000 Ta=25C 500 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) -1000 COLLECTOR CURRENT : IC (A) zElectrical characteristic curves 200 VCE= -3V 100 -1V 50 20 10 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 -2000 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current Rev.C 2/3 2SB1260 / 2SB1181 / 2SB1241 -2 -1 -0.5 -0.2 IC/IB=20 10 -0.05 -0.02 -0.01 - 1 -2 500 200 100 50 20 10 5 2 1 -5 -10 -20 -50 -100 -200 -500 -1000 -2000 1 2 COLLECTOR CURRENT : IC (mA) Fig.5 200 100 50 20 10 5 2 1 -0.1 -0.2 Collector output capacitance vs. collector-base voltage 10 2 1 500m Ta=25C Single nonrepetitive pulse 5 IC Max.(Pulse) DC s 200m s ms -0.01 20 -50 -100 0m 00 -5 -10 -20 0m =1 -0.1 =1 -2 0 =1 PW DC -0.5 -1 PW 50 PW s 100 -1 Fig.6 Ta=25C Single nonrepetitive pulse IC Max.(Pulse) IC Max. Ta=25C f=1MHz IE=0A 500 COLLECTOR TO BASE VOLTAGE : VCB (V) 0m 200 100m 50m 20m 10m 5m Printed circuit board: 1.7 mm thick with collector 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 EMITTER TO BASE VOLTAGE : VEB (V) Fig. 7 Emitter input capacitance vs. emitter-base voltage -5 -0.001 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operating area (2SB1260) 2m 2 1m copper plating at least 1 cm . 0.1 0.2 0.5 1 2 5 10 20 50 100200 5001000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SB1241) Ta=25C Single nonrepetitive pulse -2 -1 =1 PW -0.5 ms 00 COLLECTOR CURRENT : IC (A) 500 1000 Gain bandwidth product vs. emitter current -10 COLLECTOR CURRENT : IC (A) Ta=25C f=1MHz IC=0A 500 50 100 200 1000 EMITTER CURRENT : IE (mA) Collector-emitter saturation voltage vs. collector current 1000 10 20 =1 PW EMITTER INPUT CAPACITANCE : Cib (pF) Fig.4 5 COLLECTOR CURRENT : IC (A) -0.1 Ta=25C VCE= -5V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 Ta=25C TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors -0.2 -0.1 -0.05 -0.02 -0.01 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SB1181) Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1