2SB1260 / 2SB1181 / 2SB1241
Transistors
Rev.C 1/3
Power T ransistor (−80V, −1A)
2SB1260 / 2SB1181 / 2SB1241
zFeatures
1) Hight breakdown volt age and high current.
BV
CEO
= −80V, I
C
= −1A
2) Good h
FE
linearty.
3) Low V
CE(sat)
.
4) Complements the 2SD1898 / 2SD1863 /
2SD1733.
zStructure
Epitaxial planar type
PNP silicon transistor
zExternal dimensions (Unit : mm)
2SB1260
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
−0.1
+
0.2
−0.05
+
0.1
−0.1
+
0.2
+
0.2
−0.1
(3)(2)(1)
4.0
1.0±0.2 0.5±0.1
2.5
3.0±0.2 1.5±0.1
1.5±0.1
0.4±0.1 0.5±0.1 0.4±0.1
0.4
1.5
4.5
1.6±0.1
±0.3
2SB1241
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
1.0
6.8±0.2 2.5±0.2
1.05 0.45±0.1
2.54 2.54
0.5±0.1
0.9
4.4±0.2
14.5±0.5
(1) (2) (3)
0.65Max.
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
2SB1181
−
0.1
+
0.2
−
0.1
+
0.2
+
0.3
−
0.1
2.3
±
0.22.3
±
0.2
0.65
±
0.1
0.9
0.75
1.0
±
0.2
0.55
±
0.1
9.5
±
0.5
5.5 1.5
±
0.3
2.5
1.5
2.3
0.5
±
0.1
6.5
±
0.2
5.1 C0.5
(3)
(2)
(1)
0.9
∗
Denotes hFE
Abbreviated
symbol: BE
∗
zA bsolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
1 2SB1260 : Pw=20ms duty=1/2
2SB1241 : Single pulse, Pw=100ms
∗
2 2SB1260 : When mounted on a 40
×
40
×
0.7 mm ceramic board.
∗
3 2SB1241 :
Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
−80 V
V
V
A (DC)
W
°C
°C
−80
−5
−1
I
CP
A (Pulse)−2∗1
0.5
2∗2
1∗3
10
2SB1260
2SB1241, 2SB1181
2SB1181
150
−55 to 150
Symbol Limits Unit
W (Tc=25
°C
)
2SB1260 / 2SB1181 / 2SB1241
Transistors
Rev.C 2/3
zElectrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Parameter Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Cob
Min.
−80
−80
−5
−
−
822SB1260, 2SB1181
2SB1181, 2SB1241
2SB1241
2SB1181
2SB1260
−
−
−
−
−
−
−
−
−
−
100
25
−
−
−
−1
−1
390
−0.4
−
−
VI
C= −50µA
IC= −1mA
IE= −50µA
VCB= −60V
VEB= −4V
VCE= −3V, IC= −0.1A
IC/IB= −500mA/ −50mA
VCE= −10V, IE=50mA, f=100MHz
VCB= −10V
IE=0A
f=1MHz
V
V
µA
µA
−
120 −390 −
V
MHzfT
pF
−20 −pF
Typ. Max. Unit Conditions
zPackaging specifications and h
FE
Package
Code
Taping
Basic ordering
unit (pieces) 2500 2500 1000
−
PQR
h
FE
2SB1260
TL
−
−
QR
2SB1241
PQR
2SB1181 −
TV2
−
−
T100
Type
h
FE
values are classified as follows :
Item P Q R
h
FE
82 to 180 120 to 270 180 to 390
zElectrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
0
−0.1
−1
−100
−1000
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
−0.8 −1.2 −1.
6
−10
−0.2 −0.4 −1.0 −1.4
−0.6
Ta
=
25°C
V
CE
= −5V
Fig.2 Grounded emitter output
characteristics
0
0
−0.2
−0.8
−1.0
−0.4 −0.8 −1.2 −1.6
−0.4
−0.6
−2.0
−0.2 −0.6 −1.0 −1.4 −1.8
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V
)
Ta=25°C
−0.5mA
IB=0mA
−1mA
−1.5mA
−2mA
−2.5mA
−3mA
−3.5mA
−4mA
−4.5mA
Fig.3 DC current gain vs.
collector current
−1−2−5−10 −20 −50 −100 −200 −500 −200
0
COLLECTOR CURRENT : I
C
(mA)
10
DC CURRENT GAIN : h
FE
−1000
20
50
100
200
500
1000
V
CE
= −3V
−1V
Ta=25°C
2SB1260 / 2SB1181 / 2SB1241
Transistors
Rev.C 3/3
Fig.4 Collector-emitter saturatio
n
voltage vs. collector curren
t
−0.01
−0.02
−0.05
−0.1
−0.2
−0.5
−1
−2
Ta=25°C
IC/IB=20
−
1
−
2
−
5
−
10
−
20
−
50
−
100
−
200
−
500
−
200
0
−
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V
)
COLLECTOR CURRENT : IC (mA)
10
Fig.5 Gain bandwidth product
vs. emitter current
1 2 5 10 20 50 100 200 500 100
0
1
2
5
10
20
50
100
200
500
1000
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Ta
=
25°C
V
CE
= −5V
Fig.6 Collector output capacitanc
e
vs. collector-base voltage
-0.2−0.1 −0.5 -1 −2−5−10 −20 −50 −10
0
1
2
5
10
20
50
100
200
500
1000
Ta=25°C
f=1MHz
IE=0A
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : VCB (V
)
Fig. 7 Emitter input capacitance
vs. emitter-base voltage
−0.1
10
20
−0.2 −0.5 −1−2
200
1000
−5−1
500
100
50
Ta
=
25°C
f
=
1MHz
I
C
=
0A
EMITTER INPUT CAPACITANCE : Cib
(pF
)
EMITTER TO BASE VOLTAGE : V
EB
(V)
−0.1 −1−10 −100
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V
)
Fig.8 Safe operating area
(2SB1260)
−0.001
−0.01
−0.1
−1
−10
Ta=25°C
∗Single
nonrepetitive
pulse
I
C Max
.(Pulse)
I
C Max
.
P
W
=10ms
P
W
=
100
ms
DC
Fig.9 Safe operating area
(2SB1241)
12 50.1 0.2 0.5 10 20 50 100200 500100
0
COLLECTOR CURRENT : I
C (A)
COLLECTOR TO EMITTER VOLTAGE : V
CE (V
)
10
5
2
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
Ta=25°C
∗
Single
nonrepetitive
pulse
I
C Max
.(Pulse)
P
W
=10ms
P
W
=100ms
DC
∗
Printed circuit board:
1.7 mm thick with collector
copper plating at least 1 cm
2
.
−0.5−0.2−0.1 −1−2−20−10−5−50 −100
−0.01
−0.05
−0.02
−0.1
−0.5
−0.2
−1
−5
−2
P
W
=
100ms
Ta=25°C
∗Single
nonrepetitive
pulse
COLLECTOR CURRENT : I
C (A)
COLLECTOR TO EMITTER VOLTAGE : V
CE (V
)
Fig.10 Safe operating area
(2SB1181)
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.