© Semiconductor Components Industries, LLC, 2008
August, 2008 − Rev. 0
1Publication Order Number:
NTUD3169CZ/D
NTUD3169CZ
Small Signal MOSFET
20 V, 220 mA / −200 mA, Complementary,
1.0 x 1.0 mm SOT−963 Package
Features
•Complementary MOSFET Device
•Offers a Low RDS(on) Solution in the Ultra Small 1.0x1.0 mm
Package
•1.5 V Gate Voltage Rating
•Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely
Thin Environments such as Portable Electronics.
•This is a Pb−Free Device
Applications
•Load Switch with Level Shift
•Optimized for Power Management in Ultra Portable Equipment
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 20 V
Gate−to−Source Voltage VGS ±8 V
N−Channel
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
ID
220
mA
TA = 85°C 160
t v 5 s TA = 25°C 280
P−Channel
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C−200
TA = 85°C−140
t v 5 s TA = 25°C−250
Power Dissipation
(Note 1)
Steady
State TA = 25°C PD
125
mW
t v 5 s 200
Pulsed Drain Current N−Channel
tp = 10 msIDM
800
mA
P−Channel −600
Operating Junction and Storage Temperature TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode) (Note 2) IS200 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s) TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
1 oz. Cu.
2. Pulse Test: pulse width v300 ms, duty cycle v2%
MARKING
DIAGRAM
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V(BR)DSS RDS(on) Max ID Max
N−Channel
20 V
5.0 W @ −4.5 V
6.0 W @ −2.5 V −0.2 A
P−Channel
20 V
1.5 W @ 4.5 V
2.0 W @ 2.5 V
0.22 A
7.0 W @ −1.8 V
3.0 W @ 1.8 V
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Top View
D1
G2
S2
S1
G1
6
5
4
1
2
3D2
PINOUT: SOT−963
NTUD3169CZT5G SOT−963
(Pb−Free)
8000 /
Tape & Reel
2 = Specific Device Code
M = Date Code
G= Pb−Free Package
10 W @ −1.5 V
4.5 W @ 1.5 V
SOT−963
CASE 527AD
2 M G
1
NTUD3169CZ
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2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State, Minimum Pad (Note 3) RqJA 1000 °C/W
Junction−to−Ambient – t v 5 s (Note 3) 600
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol N/P Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
N
VGS = 0 V
ID = 250 mA20
V
PID = −250 mA−20
Zero Gate Voltage Drain Current
IDSS
N VGS = 0 V, VDS = 5.0 V
TJ = 25°C 50
nA
TJ = 85°C 200
P VGS = 0 V, VDS = −5.0 V
TJ = 25°C−50
TJ = 85°C−200
Zero Gate Voltage Drain Current
IDSS
N VGS = 0 V, VDS = 16 V
TJ = 25°C
100
nA
P VGS = 0 V, VDS= −16 V −100
Gate−to−Source Leakage Current
IGSS
N
VDS = 0 V, VGS = ±5.0 V
±100
nA
P±100
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(TH)
NVGS = VDS ID = 250 mA0.4 1.0 V
PID = −250 mA−0.4 −1.0
Drain−to−Source On Resistance
RDS(on)
N VGS = 4.5 V, ID = 100 mA 0.75 1.5
W
P VGS = −4.5V, ID = −100 mA 2.0 5.0
N VGS = 2.5 V, ID = 50 mA 1.0 2.0
P VGS = −2.5V, ID = −50 mA 2.6 6.0
N VGS = 1.8 V, ID = 20 mA 1.4 3.0
P VGS = −1.8V, ID = −20 mA 3.4 7.0
N VGS = 1.5 V, ID = 10 mA 1.8 4.5
P VGS = −1.5 V, ID = −10 mA 4.0 10
N VGS = 1.2 V, ID = 1.0 mA 2.8
P VGS = −1.2 V, ID = −1.0 mA 6.0
Forward Transconductance
gFS
N VDS = 5.0 V, ID = 125 mA 0.48
S
P VDS = −5.0 V, ID = −125 mA 0.35
Source−Drain Diode Voltage VSD N VGS = 0 V, IS = 10 mA TJ = 25°C0.6 1.0 V
P VGS = 0 V, IS = −10 mA −0.6 −1.0
CAPACITANCES
Input Capacitance CISS
Nf = 1 MHz, VGS = 0 V
VDS = 15 V
12.5
pF
Output Capacitance COSS 3.6
Reverse Transfer Capacitance CRSS 2.6
Input Capacitance CISS
Pf = 1 MHz, VGS = 0 V
VDS = −15 V
13.5
Output Capacitance COSS 3.8
Reverse Transfer Capacitance CRSS 2.0
4. Switching characteristics are independent of operating junction temperatures
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3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionN/PSymbol
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time td(ON)
NVGS = 4.5 V, VDD = 10 V, ID = 200 mA,
RG = 2.0 W
16.5
ns
Rise Time tr25.5
Turn−Off Delay Time td(OFF) 142
Fall Time tf80
Turn−On Delay Time td(ON)
PVGS = −4.5 V, VDD = −15 V,
ID = −200 mA, RG = 2.0 W
26
Rise Time tr46
Turn−Off Delay Time td(OFF) 196
Fall Time tf145
4. Switching characteristics are independent of operating junction temperatures
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4
TYPICAL CHARACTERISTICS (N−CHANNEL)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
543210
0
0.1
0.2
0.3
0.4
3210
0
0.1
0.2
0.3
0.4
Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
543210
0
1
2
3
4
0.350.30 0.400.250.200.150.100.05
0
0.25
0.50
0.75
1.00
1.25
1.50
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.50
0.75
1.00
1.25
1.50
1.75
201612840
10
100
1000
10,000
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
IDSS, LEAKAGE (nA)
VGS = 2 thru 5 V TJ = 25°C
1.8 V
1.6 V
1.4 V
1.2 V
TJ = 25°CTJ = 125°C
TJ = −55°C
VDS ≥ 5 V
ID = 220 mA
TJ = 25°C
TJ = 25°C
VGS = 2.5 V
VGS = 4.5 V
VGS = 4.5 V
ID = 100 mA VGS = 0 V
TJ = 125°C
TJ = 150°C
150
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5
TYPICAL CHARACTERISTICS (N−CHANNEL)
Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
GATE−TO−SOURCE AND DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W)
20151050
0
2.50
5.00
7.50
10.0
12.5
15.0
20.0
100101
1
10
100
1000
Figure 9. Diode Forward Voltage vs. Current
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
10.80.60.40.20
0
0.025
0.050
0.075
0.100
0.125
0.175
0.200
C, CAPACITANCE (pF)
t, TIME (ns)
IS, SOURCE CURRENT (A)
17.5
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
VDD = 10 V
ID = 200 mA
VGS = 4.5 V
td(off)
td(on)
tr
tf
0.150
VGS = 0 V
TJ = 25°C
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6
TYPICAL CHARACTERISTICS (P−CHANNEL)
Figure 10. On−Region Characteristics Figure 11. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
543210
0
0.04
0.20
0.28
0.36
4210
0
0.04
0.16
0.28
0.36
Figure 12. On−Resistance vs. Gate Voltage Figure 13. On−Resistance vs. Drain Current
and Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
54321
0
4
8
12
0.350.300.250.200.150.100.05
0
1
2
3
4
Figure 14. On−Resistance Variation with
Temperature
Figure 15. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.50
0.75
1.00
1.25
1.50
1.75
201612840
10
100
1000
10,000
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
IDSS, LEAKAGE (nA)
VGS = 2.2 thru 5 V
TJ = 25°C
1.8 V
1.6 V
1.4 V
1.2 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
VDS ≥ 5 V
ID = 200 mA
TJ = 25°C
TJ = 25°C
VGS = 2.5 V
VGS = 4.5 V
VGS = 4.5 V
ID = 200 mA VGS = 0 V
TJ = 125°C
TJ = 150°C
150
0.08
0.12
0.16
0.24
0.32
2.0 V
3
0.08
0.12
0.20
0.24
0.32
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7
TYPICAL CHARACTERISTICS (P−CHANNEL)
Figure 16. Capacitance Variation Figure 17. Resistive Switching Time Variation
vs. Gate Resistance
DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W)
20121020
0
2
4
6
10
12
14
18
100101
1
10
100
1000
Figure 18. Diode Forward Voltage vs. Current
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
10.80.60.40.20
0
0.02
0.04
0.06
0.08
0.12
0.16
0.18
C, CAPACITANCE (pF)
t, TIME (ns)
IS, SOURCE CURRENT (A)
16
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
VDD = 10 V
ID = 200 mA
VGS = 4.5 V
td(off)
td(on)
tr
tf
0.14
VGS = 0 V
TJ = 25°C
8
0.10
468 141618
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8
PACKAGE DIMENSIONS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.35
0.014
0.20
0.008
ǒmm
inchesǓ
SCALE 20:1
0.90
0.0354
0.35
0.014
0.20
0.008
DIM MIN NOM MAX
MILLIMETERS
A0.34 0.37 0.40
b0.10 0.15 0.20
C0.07 0.12 0.17
D0.95 1.00 1.05
E0.75 0.80 0.85
e0.35 BSC
L0.05 0.10 0.15
0.95 1.00 1.05
HE
e
b
E
D
C
AL
C0.08
HE
6X
A
12 3
456
0.004 0.006 0.008
0.003 0.005 0.007
0.037 0.039 0.041
0.03 0.032 0.034
0.014 BSC
0.002 0.004 0.006
0.037 0.039 0.041
MIN NOM MAX
INCHES
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
B
B
C
SOT−963
CASE 527AD−01
ISSUE D
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NTUD3169CZ/D
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