-e@5C D MM 62395605 OOO4840 1. MMSIEG _ NPN Silicon Power Transistors BU 208 Loo ; BU 208A STEMENS AKTIENGESELLSCHAF +840 DF 33-077 BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case (3 B 2 DIN 41872). They are outstanding for short switching times and high dielectric strength and are intended for use in horizontal deflection output stages for color TV receivers. The collector is electrically connected to the case. E $42max B i Type | Ordering code BU 208 Q68000-A494 BU 208A Q68000-A5163 ~eloz0dmax he--995 max | Bem 109 128 19,5 26,6max - max max Approx. weight 18 g Dimensions in mm Maximum ratings | BU 208 BU 208A Collector-emitter voltage (Veg = 0) Vcesm 1500 1500 vi Collector-emitter voltage Veeo 700 700 Collector current Ig 5 5 A?) Collector peak current Tom 78 75 A Base peak current Iam 4 4 A Negative base current -h 0.1 0.1 A Negative base peak current at turning off + J5m 2.5 2.5 A Junction temperature qj 115 118 G Storage temperature range Tstg -65 to +115 C Total power dissipation (Tzase2 95C) Prt | 12.5 | 12.5 Ww Thermal resistance Junction to case Ringe | 51.6 | $1.6 | KAW 1) Max. 1650 V are permitted in case of picture tube spark-avers. 2) Max. 5 A are parmitted in case of picture tube spark-overs. 886 2202 C-132e5C D MM 4235605 0004841 3 MASTIEG Ae OTH S3- or SIEMENS AKTIENGESELLSCHAF - BU 208 BU 208 A Static characteristics BU 208 BU 208 A Collector cutoff current (Vce = 1500 V; Vag = 0} Ices S31 81 mA Ernitter-base breakdown voltage (Ue =10 mA; Ig = 0) VigrieRO 25 25 Vv (Ue = 100 mA, Ig = 0) VipriEBO 27 27 Vv Collector-emitter breakdawn voltage (Ig = 100 mA, Jp = 0, L = 25 mH) Vierjceo | 2700 2700 Vv Collector-emitter saturation voltage (Ig = 4.5 A, Ip = 2A) Veesat $6 $1 Vv Base-emitter saturation voltage Uc = 4.5 A; Ip = 2A) Voesat $1.5 $1.5 Vv DC current gain (Vee = 5 V, Ie = 4.5 A) Are 22.25 22,25 - Dynamic characteristics Transition frequency (Vee =5V; le =0.1 A) fr 1 _ MHz (Vee = 5 V3 Ig = 0.1 A; f = 5 MHz) fr - 7 MHz Collector-base capacitance (Veg = 10 V, Ie = 0, f = 1 MHz) CcBo 150 125 pF Switching times: Uc = 4.5 A, Jp = 1.8 A, Lg = 10 pH) tr 0.7 0.7 HS (lo =4.5 A, Ig = 1.8 A, Lg = 10 pH) ts 10 10 us 2203 C14 887esc D MM 8235605 goo4a4e SIEMENS AKTIENGESELLSCHAF Tota! perm. power dissipation versus temperature Prot = f (Tease) W rot 0 6 0 % 100 125% asa DC current gain Neg = f (ic) Tease = parameter 10 h t 5 10 5 10 10? 5 107 5 10 5 1A p_ Ie 888 2204 0-01 5.M@MESIEG Ic BU 208A Permissible operating range le=# (Vee): Tease = 95C =4 kHz 95C 10 S 10 S 10? 5 1V Ne Output characteristics J, = f (Vee) Ig = parameter 5 0 2 4 6 8 nV Veesc > Me 8235605 0004843 7 MBSIEG _ _ 620 04845 Collector-amitter saturation voltage Vogsat = f Ue) A. fee = 33 Teasy = parameter 40! 3 10 107 107 0 05 4,0 45V Veesat Collector-emitter saturation voftage Veceat = f (fa) A Tease = 28C; Ig = parameter 20 18 t 16 0 1 2 3 4 5 6V Vee sat 2205 = p=gp DTG B-07. STEMENS AKTIENGESELLSCHAF BU 208 BU 208A Base-emitter saturation voltage Vatsat = f Uch A bre = 3: Teege = parameter 10 40 10% 6 05 40 45V Vee sot 889