Rev.5.00 Sep 07, 2005 page 1 of 8
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET
High Speed Power Switching REJ03G1039-0500
(Previous: ADE-208-454B)
Rev.5.00
Sep 07, 2005
Features
• Low on-resistance
RDS = 0.060 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
123
4
123
4D
G
S
2SK2925(L),2SK2925(S)
Rev.5.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 10 A
Drain peak current ID(pulse)Note1 40 A
Body-drain diode reverse drain current IDR 10 A
Avalanche current IAP Note3 10 A
Avalanche energy EAR Note3 8.5 mJ
Channel dissipation Pch Note2 20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1 mA, VDS = 10 V
RDS(on) — 0.060 0.080 Ω I
D = 5 A, VGS = 10 VNote4
Static drain to source on state
resistance RDS(on) — 0.095 0.160 Ω I
D = 5 A, VGS = 4 V Note4
Forward transfer admittance |yfs| 5 8 — S ID = 5 A, VDS = 10 V Note4
Input capacitance Ciss — 350 — pF
Output capacitance Coss — 190 — pF
Reverse transfer capacitance Crss — 70 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 10 — ns
Rise time tr — 55 — ns
Turn-off delay time td(off) — 60 — ns
Fall time tf — 70 — ns
ID = 5 A, VGS = 10 V,
RL = 6 Ω
Body–drain diode forward voltage VDF — 0.9 — V IF = 10 A, VGS = 0
Body–drain diode reverse
recovery time trr — 50 — ns
IF = 10 A, VGS = 0,
diF/ dt =50A/µs
Note: 4. Pulse test
2SK2925(L),2SK2925(S)
Rev.5.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Case Temperature T
C
(°C)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
Drain Current I
D
(A)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
40
30
20
10
050 100 150 200
1000
300
100
30
3
10
0.1 0.3 1 310 30 100
20
16
12
8
4
0246810
20
16
12
8
4
0246810
0.3
0.1
1
10 µs
1 ms
PW = 10 ms (1shot)
Ta = 25°C
100 µs
10 V
Operation in
this area is
limited by RDS(on)
DC Operation (Tc = 25°C)
6 V
5 V
4 V
3 V
V
GS
= 2.5 V
Pulse Test
Tc = –25°C
25°C
V
DS = 10 V
Pulse Test
75°C
2.0
1.6
1.2
0.8
0.4
048
12 16 20 5 20 100110502
1.0
0.2
0.5
0.1
0.02
0.01
0.05
Pulse Test
5 A
ID = 10 A
2 A
V
GS
= 4 V
Pulse Test
10 V
2SK2925(L),2SK2925(S)
Rev.5.00 Sep 07, 2005 page 4 of 8
Case Temperature T
C
(°C)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D
(A)
0.5
0.4
0.3
0.2
0.1
–40 0 40 80 120 160
0
0.1 0.2 1 5 20
20
2
5
1
0.5
0.5 2
I
D
= 10 A
V
GS
= 4 V
10 V
5 A
Pulse Test
10 A
10
10
2 A
2, 5 A
V
DS
= 10 V
Pulse Test
25°C
Tc = –25°C
75°C
0.1 0.5 1 2 100.2 5 01020304050
1000
200
500
100
10
20
50
100
80
60
40
20
0
20
16
12
8
4
4 8 12 16 20
0
1000
300
100
30
10
0.1 0.2 1 5 10
V
DD
= 50 V
25 V
10 V
500
200
100
20
50
10
5
I
D
= 10 A
V
GS
V
DS
3
1
0.5 220
20
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
V
DD
= 50 V
25 V
10 V
tr
V
GS
= 10 V, V
DD
= 30 V
PW = 5 µs, duty < 1 %
tf
td(on)
td(off)
2SK2925(L),2SK2925(S)
Rev.5.00 Sep 07, 2005 page 5 of 8
Pulse Width PW (S)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
15 V
0
ID
V
DS
I
AP
V
(BR)DSS
L
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
Avalanche Test Circuit Avalanche Waveform
00.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150
0
V
GS
= 0, –5 V
10 V
5 V
20
16
12
8
4
Pulse Test
10
8
6
4
2
I
AP= 10 A
V
DD = 25 V
duty < 0.1 %
Rg > 50 Ω
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 6.25°C/W, Tc = 25°C
θ γ θ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot Pulse
Tc = 25°C
2SK2925(L),2SK2925(S)
Rev.5.00 Sep 07, 2005 page 6 of 8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DD
= 30 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50 Ω
90%
10%
tf
Switching Time Test Circuit Switching Time Waveforms
2SK2925(L),2SK2925(S)
Rev.5.00 Sep 07, 2005 page 7 of 8
Package Dimensions
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
4.7 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
3.1 ± 0.5
(0.7)
Package Name
PRSS0004ZD-B DPAK(L)-(2) / DPAK(L)-(2)V
MASS[Typ.]
0.42g
RENESAS CodeJEITA Package Code
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
1.0 Max.
(0.1)(0.1)
Package Name
PRSS0004ZD-C DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28gSC-63
RENESAS CodeJEITA Package Code
Unit: mm
2SK2925(L),2SK2925(S)
Rev.5.00 Sep 07, 2005 page 8 of 8
Ordering Information
Part Name Quantity Shipping Container
2SK2925L-E 3200 pcs Box (Sack)
2SK292ST5L-E 3000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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