Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 8
1Publication Order Number:
MURB1660CT/D
MURB1660CTG,
MURB1660CTT4G,
NRVUB1660CTT4G
SWITCHMODE
Power Rectifier
D2PAK Power Surface Mount Package
These state−of−the−art devices are designed for use in switching
power supplies, inverters, and as free wheeling diodes.
Features
Package Designed for Power Surface Mount Applications
Ultrafast 60 Nanosecond Recovery Times
175C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
High Temperature Glass Passivated Junction
High Voltage Capability to 600 V
Low Leakage Specified @ 150C Case Temperature
Short Heat Sink Tab Manufactured − Not Sheared!
Similar in Size to Industrial Standard TO−220 Package
AEC−Q101 Qualified and PPAP Capable
NRVU Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
Pb−Free Packages*
Mechanical Characteristics:
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 1.7 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Ratings:
Machine Model, C > 400 V
Human Body Model, 3B > 8000 V
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
D2PAK
CASE 418B
STYLE 3
ULTRAFAST RECTIFIER
16 AMPERES, 600 VOLTS
1
3
4
MARKING DIAGRAM
AY WW
U1660G
AKA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
U1660 = Specific Device Code
G = Pb−Free Package
AKA = Diode Polarity
MURB1660CTT4G D2PAK
(Pb−Free)
800 /
Tape & Reel
MURB1660CTG D2PAK
(Pb−Free)
50 Units/Rail
NRVUB1660CTT4G D2PAK
(Pb−Free)
800 /
Tape & Reel
MURB1660CTG, MURB1660CTT4G, NRVUB1660CTT4G
http://onsemi.com
2
MAXIMUM RATINGS (Per Leg)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
600 V
Average Rectified Forward Current
(Rated VR, TC = 150C) Total Device
IF(AV) 8.0
16
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 150C)
IFM 16
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM 100
A
Operating Junction and Storage Temperature Range TJ, Tstg −65 to +175 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Rating Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case RqJC 2.0 C/W
Maximum Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 50 C/W
Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds TL260 C
1. See Chapter 7 for mounting conditions.
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 8.0 Amp, TC = 150C)
(iF = 8.0 Amp, TC = 25C)
vF1.20
1.50
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 150C)
(Rated dc Voltage, TC = 25C)
iR500
10
mA
Maximum Reverse Recovery Time
(IF = 1.0 Amp, di/dt = 50 Amp/ms)
(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)
trr 60
50
ns
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (A)
0.01
0.04
0.4
2.0
10
40
400
1.0 K
600500400300200100
100
50
20
, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF
10
5.0
2.0
1.0
0.1 0.4 0.6 1 1.2 1.6 1.8
vF, INSTANTANEOUS VOLTAGE (V)
0.3
100C
25C
TJ = 150C
0.8 1.4
100C
TJ = 150C
25C100
0.1
1.0
10 K
Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg
MURB1660CTG, MURB1660CTT4G, NRVUB1660CTT4G
http://onsemi.com
3
TC, CASE TEMPERATURE (C)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
180
170160150140
RATED VR APPLIED
RqJC = 2C/W
DC
SQUARE WAVE
PF(AV), AVERAGE POWER DISSIPATION (WATT
S
14
12
8.0
6.0
2.0
10
09876543210
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
13
11
7.0
4.0
1.0
DC
SQUARE WAVE
3.0
5.0
9.0
10
TJ = 175C
0
Figure 3. Current Derating, Case, Per Leg Figure 4. Power Dissipation, Per Leg
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZE
D
0.01
0.02
0.05
0.1
0.2
0.5
1.0
1K100 200 50010 20 5012 50.1 0.2 0.50.01 0.02 0.05
t, TIME (ms)
P(pk)
t1t2
ZqJC(t) = r(t) RqJC
D curves apply for power
pulse train shown
read time at T1
Duty Cycle, D = t1/t2TJ(pk) - TC = P(pk) ZqJC(t)
D = 0.5
0.1
0.05
0.01
SINGLE PULSE
Figure 5. Thermal Response
Figure 6. Typical Capacitance, Per Leg
VR, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
10 1 10 100
30
100
300
1 K
TJ = 25C
MURB1660CTG, MURB1660CTT4G, NRVUB1660CTT4G
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4
PACKAGE DIMENSIONS
SEATING
PLANE
S
G
D
−T−
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
−B−
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
F0.310 0.350 7.87 8.89
L0.052 0.072 1.32 1.83
M0.280 0.320 7.11 8.13
N0.197 REF 5.00 REF
P0.079 REF 2.00 REF
R0.039 REF 0.99 REF
M
L
F
M
L
F
M
L
F
VARIABLE
CONFIGURATION
ZONE RN P
U
VIEW W−W VIEW W−W VIEW W−W
123
D
2
PAK 3
CASE 418B−04
ISSUE K
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
8.38
5.080
DIMENSIONS: MILLIMETERS
PITCH
2X
16.155
1.016
2X
10.49
3.504
MURB1660CTG, MURB1660CTT4G, NRVUB1660CTT4G
http://onsemi.com
5
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
MURB1660CT/D
LITERATURE FULFILLMENT:
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