Symbol
V
DS
V
GS
I
DM
I
AS
E
AS
T
J
, T
STG
Symbol
Typ
Max
15 20
45 60
R
θJC
1.1 1.5
1.3
W
Junction and Storage Temperature Range
P
D
°C
83
33
-55 to 150
T
C
=100°C 2.1 W
Continuous Drain
Current
B,G
Maximum UnitsParameter
T
C
=25°C
T
C
=100°C
30
I
D
Maximum Junction-to-Ambient
A
Steady-State
85
67
Avalanche Current 85
Power Dissipation
A
T
A
=25°C P
DSM
T
A
=70°C
Drain-Source Voltage
Single avalanche energy L=0.1mH
Pulsed Drain Current
Continuous Drain
Current
A
R
θJA
°C/W
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±20
Power Dissipation
B
T
C
=25°C
Gate-Source Voltage
361 mJ
Maximum Junction-to-Case
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s
160 A
T
A
=70°C 20
T
A
=25°C I
DSM
25
AON6404
30V N-Channel MOSFET
Product Summary
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 2.2mΩ (V
GS
= 10V)
R
DS(ON)
< 3.8mΩ (V
GS
= 4.5V)
ESD protected
100% UIS Tested
100% Rg Tested
General Description
The AON6404 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
DS(ON).
This device is ideal for load
switch and battery protection applications.
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View Bottom View
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6404
Symbol Min Typ Max Units
BV
DSS
30 34 V
1
T
J
=55°C 5
I
GSS
10
V
GS(th)
1.4 1.7 2 V
I
D(ON)
160 A
1.8 2.2
T
J
=125°C 2.5 3.1
3 3.8 mΩ
g
FS
75 S
V
SD
0.87 1.3 V
I
S
85 A
C
iss
7420 9000 pF
C
oss
1045 pF
C
rss
720 pF
R
g
1.2 1.8 Ω
Q
g
(10V) 118 155 nC
Q
g
(4.5V) 54 nC
Q
gs
29 nC
Q
gd
22 nC
t
D(on)
17 ns
t
r
18 ns
t
D(off)
67 ns
t
f
25 ns
t
rr
60 80 ns
Q
rr
66 nC
Continuous Drain Current
B
25
20
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
Turn-Off Fall Time
Turn-On DelayTime
mΩ
V
GS
=4.5V, I
D
=20A
I
S
=85A,V
GS
=0V
V
DS
=5V, I
D
=20A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
uA
Gate Threshold Voltage V
DS
=V
GS
I
D
=250µA
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
= ±16V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=100A/µs
A: The value of RθJA is measured with the device in a still air environment with T A =25°C, with the device mounted on 1 in2 FR-4 board with
2oz. Copper, in a still air environment with T A=25°
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsink is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. Maximum current is limited by the package.
Rev4: May 2011
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
120
140
160
0 1 2 3 4 5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
3.5V
V
GS
=10V,6V,4.5V,4V
3V
2V 0
20
40
60
80
100
1.5 2 2.5 3 3.5 4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
1.5
2
2.5
3
3.5
0 5 10 15 20 25 30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0.0 0.2 0.4 0.6 0.8 1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25°C
125°C
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
I
D
=20A
V
GS
=4.5V
V
GS
=10V
1
2
3
4
5
6
2 5 8 11 14 17 20
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=20A
25°C
125°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 20 40 60 80 100 120
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
2000
4000
6000
8000
10000
12000
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
10
100
1000
10000
100000
1.00E-06 1.00E-04 1.00E-02 1.00E+00
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
C
oss
C
rss
1
10
100
1000
0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
100us
10us
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
1ms
10ms
V
DS
=15V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJc
.R
θJc
R
θJC
=1.5°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max
)
=150°C
T
C
=25°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6404
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
70
90
110
130
150
1.000E-06 1.000E-05 1.000E-04 1.000E-03
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A), Peak Avalanche Current
0
10
20
30
40
50
60
70
80
90
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W)
T
A
=25°C
0
10
20
30
40
50
60
70
80
90
100
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 14: Current De-rating (Note B,G)
Current rating I
D
(A)
1
10
100
1000
10000
1.00E-03 1.00E-01 1.00E+01 1.00E+03
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note A)
Power (W)
0.001
0.01
0.1
1
10
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note A)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6404
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t tr
d(on)
t
on
t
d(off)
tf
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Alpha & Omega Semiconductor, Ltd. www.aosmd.com