IXTV250N075TS - IXYS - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 175°C75V

VDGR TJ= 25°C to 175°C; RGS = 1 MΩ75 V

VGSM Transient ± 20 V

ID25 TC= 25°C 250 A

ILRMS Lead Current Limit, RMS 75 A

IDM TC= 25°C, pulse width limited by TJM 560 A

IAR TC= 25°C40A

EAS TC= 25°C 1.5 J

dv/dt IS≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ V

DSS 3 V/ns

TJ≤ 175°C, RG = 3.3 Ω

PDTC= 25°C 550 W

TJ-55 ... +175 °C

TJM 175 °C

Tstg -55 ... +175 °C

TL1.6 mm (0.062 in.) from case for 10 s 300 °C

TSOLD Plastic body for 10 seconds 260 °C

FCMounting force (PLUS220) 11...65 /2.5...15 N/lb.

Weight 3g

TrenchMVTM

Power MOSFET

Preliminary Technical Information

N-Channel Enhancement Mode

Avalanche Rated

IXTV250N075T

IXTV250N075TS

VDSS =75 V

ID25 = 250 A

RDS(on) ≤≤

≤≤

≤4.0 mΩΩ

ΩΩ

Ω

DS99696(11/06)

G = Gate D = Drain

S = Source TAB = Drain

G

SD (TAB)

PLUS220SMD (IXTV_S)

G

S

D

PLUS220 (IXTV)

D (TAB)

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0 V, ID = 250 µA75V

VGS(th) VDS = VGS, ID = 250 µA 2.0 4.0 V

IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA

IDSS VDS = VDSS 25 µA

VGS = 0 V TJ = 150°C 250 µA

RDS(on) VGS = 10 V, ID = 50 A, Notes 1, 2 3.3 4.0 m Ω

Features

Ultra-low On Resistance

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

175 °C Operating Temperature

Advantages

Easy to mount

Space savings

High power density

Applications

Automotive

- Motor Drives

- 42V Power Bus

- ABS Systems

 DC/DC Converters and Off-line UPS

Primary Switch for 24V and 48V

Systems

 High Current Switching

Applications

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTV250N075T

IXTV250N075TS

PLUS220SMD (IXTV_S) Outline

PLUS220 (IXTV) Outline

Terminals:

1 - Gate 2 - Drain

3 - Source Tab - Drain

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

gfs VDS= 10 V; ID = 60 A, Note 1 75 122 S

Ciss 9900 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1330 pF

Crss 285 pF

td(on) 32 ns

trVGS = 10 V, VDS = 0.5 VDSS, ID = 50 A 50 ns

td(off) RG = 3.3 Ω (External) 58 ns

tf45 ns

Qg(on) 200 nC

Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A 50 nC

Qgd 60 nC

RthJC 0.27°C/W

RthCS PLUS220 .25 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic

Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.

ISVGS = 0 V 250 A

ISM Pulse width limited by TJM 560 A

VSD IF = 50 A, VGS = 0 V, Note 1 1.0 V

trr IF = 50 A, -di/dt = 100 A/µs80ns

VR = 25 V, VGS = 0 V

Note 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;

2. On through-hole packages, RDS(on) Kelvin test contact

location is 5 mm or less from the package body.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications

offered are derived from data gathered during objective characterizations of preliminary

engineering lots; but also may yet contain some information supplied during a pre-

production design evaluation. IXYS reserves the right to change limits, test conditions,

and dimensions without notice.

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537

IXTV250N075T

IXTV250N075TS

Fig. 1. Output Characteristics

@ 25ºC

0

25

50

75

100

125

150

175

200

225

250

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

6V

5V

7V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

350

00.5 11.5 22.5 33.54

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

6V

7V

5V

Fig. 3. Output Characteristics

@ 150ºC

0

25

50

75

100

125

150

175

200

225

250

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

6V

5V

7V

Fig. 4. RDS(on) Normalized to ID = 125A Value

vs. Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 250A

I

D

= 125A

Fig. 5. RDS(on) Normalized to ID = 125A Value

vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

0 50 100 150 200 250 300 350

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V - - - -

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current vs. Case Temperature

0

10

20

30

40

50

60

70

80

90

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTV250N075T

IXTV250N075TS

Fig. 7. Input Admittance

0

25

50

75

100

125

150

175

200

225

250

33.5 44.5 55.5 66.5

V

GS

- Volts

I

D

- Amperes

T

J

= 150ºC

25ºC

-40ºC

Fig. 8. Transconductance

0

20

40

60

80

100

120

140

160

180

0 25 50 75 100 125 150 175 200 225 250

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

150ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

50

100

150

200

250

300

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3

V

SD

- Volts

I

S

- Amperes

T

J

= 150ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 20 40 60 80 100 120 140 160 180 200

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 37.5V

I

D

= 25A

I

G

= 10mA

Fig. 11. Capacitance

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarad

s

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal

Impedance

0.01

0.10

1.00

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXTV250N075T

IXTV250N075TS

Fig. 14. Resistive Turn-on

Rise Time vs. Drain Current

20

25

30

35

40

45

50

55

24 26 28 30 32 34 36 38 40 42 44 46 48 50

I

D

- Amperes

t

r

- Nanosecond

s

R

G

= 3.3Ω

V

GS

= 10V

V

DS

= 37.5V

T

J

= 125ºC

T

J

= 25ºC

Fig. 15. Resistive Turn-on

Switching Times vs. Gate Resistance

0

20

40

60

80

100

120

140

160

180

200

2 4 6 8 10 12 14 16 18 20

R

G

- Ohms

t

r

- Nanoseconds

35

40

45

50

55

60

65

70

75

80

85

t

d ( o n )

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 37.5V I

D

= 50A, 25A

Fig. 16. Resistive Turn-off

Switching Times vs. Junction Temperature

40

41

42

43

44

45

46

47

48

49

50

51

52

53

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanosecond

s

50

54

58

62

66

70

74

78

82

86

90

94

98

102

t

d ( o f f )

- Nanosecond

s

t

f

t

d(off)

- - - -

R

G

= 3.3Ω, V

GS

= 10V

V

DS

= 37.5V

I

D

= 25A

I

D

= 50A

Fig. 17. Resistive Turn-off

Switching Times vs. Drain Current

36

38

40

42

44

46

48

50

52

54

56

24 26 28 30 32 34 36 38 40 42 44 46 48 50

I

D

- Amperes

t

f

- Nanoseconds

50

55

60

65

70

75

80

85

90

95

100

t

d ( o f f )

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 3.3Ω, V

GS

= 10V

V

DS

= 37.5V

T

J

= 25ºC, 125ºC

Fig. 13. Resistive Turn-on

Rise Time vs. Junction Temperature

20

23

26

29

32

35

38

41

44

47

50

53

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanosecond

s

R

G

= 3.3Ω

V

GS

= 10V

V

DS

= 37.5V

I

D

= 50A

I

D

= 25A

Fig. 18. Resistive Turn-off

Switching Times vs. Gate Resistance

20

40

60

80

100

120

140

160

180

200

220

240

2 4 6 8 10 12 14 16 18 20

R

G

- Ohms

t

f

- Nanoseconds

60

90

120

150

180

210

240

270

300

330

360

390

t

d ( o f f )

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 37.5V

I

D

= 50A

I

D

= 25A

IXYS REF: T_250N075T (6V) 8-31-08-A.xls