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1
2
4
3
Low Noise Silicon Bipolar RF Transistor
• For highest gain and low noise amplifier
Outstanding Gms = 22.5 dB at 1.8 GHz
Minimum noise figure NFmin = 0.95 dB at 1.8 GHz
• For oscillators up to 15 GHz
• Transition frequency fT = 45 GHz
• Pb-free (RoHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP520F APs 1=B 2=E 3=C 4=E - - TSFP-4
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage
TA = 25 °C
T
A
= -55 °C
VCEO
2.5
2.4
V
Collector-emitter voltage VCES 10
Collector-base voltage VCBO 10
Emitter-base voltage VEBO 1
Collector current IC50 mA
Base current IB5
Total power dissipation1)
TS ≤ 98 °C
Ptot 120 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
1TS is measured on the emitter lead at the soldering point to pcb
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 430 K/W
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Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 2.5 3 3.5 V
Collector-emitter cutoff current
VCE = 10 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 200 mA
Emitter-base cutoff current
VEB = 1 V, IC = 0
IEBO - - 35 µA
DC current gain
IC = 20 mA, VCE = 2 V, pulse measured
hFE 70 110 170 -
1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 2 V, f = 2 GHz
fT32 45 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.07 0.14 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.25 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.31 -
Minimum noise figure
IC = 2 mA, VCE = 2 V, ZS = ZSopt ,
f = 1.8 GHz
NFmin - 0.95 - dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
Gms - 22.5 - dB
Insertion power gain
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
|S21|2- 20.5 -
Third order intercept point at output
VCE = 2 V, IC = 20 mA, f = 1.8 GHz,
ZS = ZSopt, ZL = ZLopt
IP3 - 23.5 - dBm
1dB compression point
IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
P-1dB - 10.5 -
1Gms = |S21 / S12|
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Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
110
mW
130
Ptot
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Package TSFP-4
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BFP520F
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
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For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
Technologies Office.
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