APTC60BBM24T3G
APTC60BBM24T3G– Rev 0 May, 2011
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Char ac teristics (per CoolMOS)
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 600V Tj = 25°C 350
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V Tj = 125°C 600 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 47.5A 24 mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 2.1 3 3.9 V
IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 200 nA
Dynamic Characteristics (per CoolMOS)
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 14.4
Coss Output Capacitance VGS = 0V ; VDS = 25V
f = 1MHz 17 nF
Qg Total gate Charge 300
Qgs Gate – Source Charge 68
Qgd Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 95A 102
nC
Td(on) Turn-on Delay Time 21
Tr Rise Time 30
Td(off) Turn-off Delay Time 100
Tf Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 95A
RG = 2.5Ω 45
ns
Eon Turn-on Switching Energy 1350
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω 1040 µJ
Eon Turn-on Switching Energy 2200
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω 1270 µJ
Chopper diode ratings and characteristics (per diode)
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Volt age 600 V
Tj = 25°C 500
IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 1000 µA
IF DC Forward Current Tc = 80°C 120 A
IF = 120A 1.6 1.8
IF = 240A Tj = 25°C 1.9
VF Diode Forw ard Voltage IF = 120A Tj = 125°C 1.4 V
Tj = 25°C 130
trr Reverse Recovery Time Tj = 125°C 170 ns
Tj = 25°C 440
Qrr Reverse Recovery Charge
IF = 120A
VR = 400V
di/dt = 400A/µs
Tj = 125°C 1840 nC