MOTOROLA Order this document by MRF174/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. * Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50% (Min) * Excellent Thermal Stability, Ideally Suited For Class A Operation * Facilitates Manual Gain Control, ALC and Modulation Techniques * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR * Low Noise Figure -- 3.0 dB Typ at 2.0 A, 150 MHz 125 W, to 200 MHz N-CHANNEL MOS BROADBAND RF POWER FET D G S CASE 211-11, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc VGS 40 Vdc Drain Current -- Continuous ID 13 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 270 1.54 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.65 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 RF DEVICE DATA Motorola, Inc. 1997 MRF174 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (VGS = 0, ID = 50 mA) V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS -- -- 10 mAdc Gate-Source Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 1.0 Adc Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 6.0 Vdc Forward Transconductance (VDS = 10 V, ID = 3.0 A) gfs 1.75 2.5 -- mhos Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss -- 175 -- pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss -- 190 -- pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss -- 40 -- pF Noise Figure (VDD = 28 Vdc, ID = 2.0 A, f = 150 MHz) NF -- 3.0 -- dB Common Source Power Gain (VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA) Gps 9.0 11.8 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA) 50 60 -- % Electrical Ruggedness (VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA, VSWR 30:1 at all Phase Angles) OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS (Figure 1) No Degradation in Output Power L4 R2 BIAS ADJUST R3 + C9 - C12 C13 R1 C10 D1 C14 C11 + VDD = 28 V - RFC1 R4 C3 RF INPUT C1 C2 C8 L1 L2 C4 C5 RF OUTPUT L3 DUT C1 -- 15 pF Unelco C2 -- Arco 462, 5.0 - 80 pF C3 -- 100 pF Unelco C4 -- 25 pF Unelco C6 -- 40 pF Unelco C7 -- Arco 461, 2.7 - 30 pF C5, C8 -- Arco 463, 9.0 - 180 pF C9, C11, C14 -- 0.1 F Erie Redcap C10 -- 50 F, 50 V C12, C13 -- 680 pF Feedthru D1 -- 1N5925A Motorola Zener C6 C7 L1 -- #16 AWG, 1-1/4 Turns, 0.213 ID L2 -- #16 AWG, Hairpin 0.25 0.062 0.47 0.2 L4 -- 10 Turns #16 AWG Enameled Wire on R1 RFC1 -- 18 Turns #16 AWG Enameled Wire, 0.3 ID R1 -- 10 , 2.0 W R2 -- 1.8 k, 1/2 W R3 -- 10 k, 10 Turn Bourns R4 -- 10 k, 1/4 W L3 -- #14 AWG, Hairpin Figure 1. 150 MHz Test Circuit MRF174 2 RF DEVICE DATA 140 80 150 MHz f = 100 MHz 120 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) f = 100 MHz 200 MHz 100 80 60 40 VDD = 28 V IDQ = 100 mA 20 0 4 2 6 8 10 12 200 MHz 50 40 30 VDD = 13.5 V IDQ = 100 mA 20 0 14 0 4 2 6 8 10 12 14 Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power 160 16 160 IDQ = 100 mA f = 100 MHz 140 Pin = 6 W Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 60 10 0 120 4W 100 80 2W 60 40 20 140 IDQ = 100 mA f = 150 MHz Pin = 12 W 120 8W 100 80 4W 60 40 20 0 0 12 14 16 18 20 22 24 26 28 12 14 16 18 20 22 24 26 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 160 28 22 140 IDQ = 100 mA f = 200 MHz 20 120 Pin = 16 W 100 12 W 80 8W Pout = 125 W VDD = 28 V IDQ = 100 mA 18 G PS , POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) 150 MHz 70 60 40 16 14 12 10 8 6 20 4 0 12 14 16 18 20 22 24 26 28 2 20 40 60 80 100 120 140 160 180 200 VDD, SUPPLY VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 6. Output Power versus Supply Voltage Figure 7. Power Gain versus Frequency RF DEVICE DATA 220 MRF174 3 5 f = 150 MHz Pin = CONSTANT IDQ = 100 mA VDD = 28 V 140 120 I D, DRAIN CURRENT (AMPS) Pout , OUTPUT POWER (WATTS) 160 100 80 60 40 4 VDS = 10 V 3 2 TYPICAL DEVICE SHOWN, VGS(th) = 3 V 1 20 TYPICAL DEVICE SHOWN, VGS(th) = 3 V -12 -10 -8 -6 -4 -2 2 0 4 0 6 1 2 3 4 5 6 VGS, GATE-SOURCE VOLTAGE (VOLTS) VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 8. Output Power versus Gate Voltage Figure 9. Drain Current versus Gate Voltage (Transfer Characteristics) 1000 1.2 900 VDD = 28 V 1.1 ID = 4 A 1 3A 2A 0.9 100 mA 0.8 - 25 0 25 50 75 100 125 VGS = 0 V f = 1 MHz 800 C, CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 0 -14 150 175 TC, CASE TEMPERATURE (C) Figure 10. Gate-Source Voltage versus Case Temperature 700 600 500 400 300 Coss 200 Ciss 100 Crss 0 0 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 24 28 Figure 11. Capacitance versus Drain Voltage 20 I D, DRAIN CURRENT (AMPS) 10 6 4 TC = 25C 2 1 0.6 0.4 0.2 1 2 4 6 10 20 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 60 100 Figure 12. DC Safe Operating Area MRF174 4 RF DEVICE DATA f (MHz) S11 S21 S12 S22 2.0 |S11| 0.932 - 133 |S21| 74.0 112 |S12| 0.011 23 |S22| 0.835 - 151 5.0 0.923 - 160 31.6 98 0.011 12 0.886 - 168 10 0.921 - 170 16.0 93 0.011 10 0.896 - 174 20 0.921 - 175 8.00 88 0.011 12 0.899 - 177 30 0.921 - 177 5.32 86 0.011 16 0.900 - 178 40 0.921 - 177 3.98 83 0.012 21 0.901 - 178 50 0.922 - 178 3.17 81 0.012 26 0.902 - 178 60 0.923 - 178 2.63 79 0.012 30 0.903 - 178 70 0.924 - 178 2.24 77 0.013 34 0.904 - 178 80 0.925 - 178 1.95 75 0.013 39 0.906 - 178 90 0.927 - 178 1.72 73 0.014 43 0.907 - 178 100 0.930 - 178 1.50 71 0.016 45 0.910 - 178 110 0.930 - 178 1.31 70 0.018 46 0.912 - 178 120 0.931 - 178 1.19 68 0.019 47 0.914 - 178 130 0.942 - 178 1.10 67 0.019 49 0.919 - 178 140 0.936 - 178 1.01 66 0.021 50 0.921 - 178 150 0.938 - 178 0.936 65 0.021 53 0.922 - 178 160 0.938 - 178 0.879 64 0.022 53 0.923 - 178 170 0.940 - 178 0.830 63 0.023 54 0.923 - 177 180 0.942 - 178 0.780 61 0.024 56 0.924 - 177 190 0.942 - 178 0.737 60 0.026 59 0.928 - 177 200 0.952 - 178 0.705 59 0.027 58 0.929 - 177 210 0.950 - 178 0.668 57 0.029 61 0.934 - 177 220 0.942 - 178 0.626 56 0.030 61 0.933 - 177 230 0.943 - 178 0.592 56 0.032 62 0.939 - 177 240 0.946 - 177 0.566 55 0.033 64 0.941 - 177 250 0.952 - 177 0.545 54 0.035 64 0.943 - 177 260 0.958 - 177 0.523 53 0.036 65 0.946 - 177 270 0.956 - 177 0.500 52 0.038 67 0.943 - 177 280 0.960 - 177 0.481 52 0.039 68 0.946 - 177 290 0.956 - 178 0.460 51 0.042 68 0.944 - 177 300 0.955 - 178 0.443 50 0.043 68 0.947 - 177 Table 1. Common Source Scattering Parameters VDS = 28 V, ID = 3.0 A RF DEVICE DATA MRF174 5 + j50 + 90 + j25 + j100 + 60 +120 300 + j150 + j10 250 +150 + j250 + j500 10 300 0 25 50 100 150 .05 250 500 180 f = 30 MHz .04 .03 .02 + 30 200 150 100 50 f = 30 MHz .01 0 - j500 - j250 - j10 - 30 -150 - j150 - j100 - j25 - 60 -120 - j50 - 90 Figure 13. S11, Input Reflection Coefficient versus Frequency VDS = 28 V, ID = 3.0 A Figure 14. S12, Reverse Transmission Coefficient versus Frequency VDS = 28 V, ID = 3.0 A + j50 + 90 f = 30 MHz + j25 + 60 +120 + j100 + j150 50 + 30 +150 180 5 4 3 2 1 100 150 300 + j10 + j250 + j500 0 0 f = 30 MHz 25 50 100 150 250 500 300 - j500 - j250 - j10 - 30 -150 - 60 -120 - j150 - j100 - j25 - 90 - j50 Figure 15. S21, Forward Transmission Coefficient versus Frequency VDS = 28 V, ID = 3.0 A Figure 16. S22, Output Reflection Coefficient versus Frequency VDS = 28 V, ID = 3.0 A MRF174 6 RF DEVICE DATA 150 f = 200 MHz f = 200 MHz 100 100 Zin Pout = 125 W, VDD = 28 V IDQ = 100 mA ZOL* 30 30 150 Zo = 10 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. f MHz Zin Ohms ZOL* Ohms 30 100 150 200 2.90 - j3.95 1.25 - j2.90 1.18 - j1.40 1.30 - j0.90 2.95 - j3.90 1.85 - j1.05 1.72 - j0.05 1.70 + j0.25 Figure 17. Series Equivalent Input/Output Impedance, Zin, ZOL* RF DEVICE DATA MRF174 7 DESIGN CONSIDERATIONS The MRF174 is a RF power N-Channel enhancement mode field-effect transistor (FET) designed especially for UHF power amplifier and oscillator applications. Motorola RF MOSFETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V- groove vertical power FETs. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitating manual gain control, ALC and modulation. DC BIAS The MRF174 is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. See Figure 9 for a typical plot of drain current versus gate voltage. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF174 was charac- MRF174 8 terized at IDQ = 100 mA, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF174 may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. (See Figure 8.) AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar UHF transistors are suitable for MRF174. See Motorola Application Note AN721, Impedance Matching Networks Applied to RF Power Transistors. The higher input impedance of RF MOSFETs helps ease the task of broadband network design. Both small signal scattering parameters and large signal impedances are provided. While the s-parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is an additional advantage of RF MOS power FETs. RF DEVICE DATA PACKAGE DIMENSIONS A U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M 1 M Q DIM A B C D E H J K M Q R U 4 R 2 B 3 D K J H C E SEATING PLANE INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --- 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 STYLE 2: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --- 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 SOURCE GATE SOURCE DRAIN CASE 211-11 ISSUE N RF DEVICE DATA MRF174 9 NOTES MRF174 10 RF DEVICE DATA NOTES RF DEVICE DATA MRF174 11 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF174 12 *MRF174/D* MRF174/D RF DEVICE DATA