AH322 2W High Linearity InGaP HBT Amplifier Applications Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC-8 Package Product Features Functional Block Diagram Pin 1 Reference Mark 400-2700 MHz 13.7 dB Gain at 2140 MHz +33 dBm P1dB +50 dBm Output IP3 500 mA Quiescent Current +5 V Single Supply MTTF > 100 Years Lead-free/RoHS-compliant SOIC-8 Package Vbias 1 8 Iref N/C 2 7 RF_Out RF_In 3 6 RF_Out N/C 4 5 N/C Backside Paddle - RF/DC GND General Description Pin Configuration The AH322 is a high dynamic range driver amplifier in a low-cost surface-mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +50 dBm OIP3 and +33 dBm of compressed 1dB power. The integrated active bias circuitry in the devices enables excellent stable linearity performance over temperature. It is housed in a lead-free/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. Pin # Symbol 1 2, 4, 5 3 6, 7 8 Backside Paddle Vbias N/C RF_in RF_Out Iref RF/DC GND The AH322 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. The AH322 is ideal for the final stage of small repeaters or as driver stages for high power amplifiers. In addition, the amplifier can be used for a wide variety of other applications within the 400 to 2700 MHz frequency band. Not Recommended for New Designs Recommended Replacement Part: TQP7M9104 Ordering Information Part No. AH322-S8G Description 2W High Linearity Amplifier Standard T/R size = 1000 pieces on a 7" reel. Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. - 1 of 20 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Storage Temperature RF Input Power, CW, 50, T=25C Device Voltage,Vcc, Vbias Device Current Device Power -65 to 150 C +10 dBm +8 V 1400 mA +8 W Parameter Min Typ Vcc Tcase TJ (for >106 hours MTTF) +4.5 -40 +5 Max Units +5.25 +85 +200 V C C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: Vcc = +5 V, Icq = 500 mA, T = +25 C, in a tuned application circuit. Parameter Conditions Operational Frequency Range Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 WCDMA Channel Power at -50 dBc ACLR Noise Figure Vcc, Vbias Quiescent Current, Icq Iref Thermal Resistance (jnc. to case) jc Min Typical 400 +31.4 +45 See Note 1 See Note 2 See Note 3 435 2140 13.7 10.2 14 +32.6 +50.0 +23.4 4.7 +5 500 30 Max Units 2700 MHz MHz dB dB dB dBm dBm dBm dB V mA mA C/W 600 18.6 Notes: 1. OIP3 measured with two tones at an output power of +24 dBm / tone separated by 1 MHz, 2140 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule. 3GPP WCDMA, 164DPCH, 5 MHz, no clipping, PAR = 10.2 dB at 0.01% Probability. This corresponds to the quiescent collector current or operating current under small-signal conditions into pins 6 and 7. 2. 3. Performance Summary Table Test conditions unless otherwise noted: Vcc = +5 V, Icq = 500 mA, T = +25 C, in an application circuit tuned for each frequency. Frequency 750 940 1840 1960 2140 2655 MHz Gain Input Return Loss Output Return Loss Output P1dB Output IP3 [See note 1] WCDMA Channel Power at -50 dBc ACLR 19.2 17 10.3 +32.5 +46 +23.1 19.3 13 7.5 +32.8 +47.3 +23.5 14.6 19 11.3 +33.1 +49.5 +24.1 14.1 12.6 10.9 +33.2 +48.5 +23.7 13.7 10.2 14 +32.6 +50.0 +23.4 12.6 20 9.3 +31.9 +45.1 +22.6 dB dB dB dBm dBm dBm Notes: 1. OIP3 is measured at 21 dBm / tone separated by 1 MHz, 750 MHz, 940 MHz, 1840 MHz, 1960 MHz, and 2655 MHz. OIP3 is measured at 24 dBm / tone separated by 1 MHz, 2140 MHz. Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. - 2 of 20 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier Device Characterization Data Gain / Maximum Stable Gain 1 40 35 0.8 3 GHz 30 Gain (dB) Output Smith Chart Input Smith Chart 45 25 3 GHz 0.6 Gain (MAX) 0.4 20 Gain 15 0.2 10 0 5 -0.2 0 0.25 0.5 0.75 1 -1 -0.75 -0.5-0.25 0.05 GHz 0 -5 -0.4 0 0.5 1 1.5 2 2.5 3 0.05 GHz -0.6 Frequency (GHz) -0.8 -1 Note: The gain for the unmatched device in 50 ohm system is shown as the trace in pink color, [DB (S (2, 1)]. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the blue line [DB (GMAX)]. The impedance plots are shown from 0.05 - 3 GHz. S-Parameter Data Vcc = +5 V, Icq = 500 mA, T = +25 C, unmatched 50 ohm system, calibrated to device leads Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) 50 -0.74 -174.58 29.75 109.51 -43.47 25.51 -1.15 -135.3 100 -0.53 -179.31 24.21 98.59 -43.22 17.83 -1.22 -157.31 200 -0.45 176.71 18.46 89.55 -42.49 8.135 -1.19 -170.3 400 -0.44 170.07 12.77 80.82 -42.04 5.31 -1.22 -178.39 600 -0.56 163.11 9.78 73.71 -41.41 10.52 -1.18 176.07 700 -0.61 159.9 8.73 69.49 -41.21 11.31 -1.12 173.93 800 -0.64 156.03 7.94 65.68 -40.26 12.50 -1.17 171.69 1000 -0.78 147.66 6.80 56.95 -39.65 7.88 -1.22 166.82 1200 -0.87 138.49 6.11 46.99 -38.34 2.45 -1.26 162.15 1400 -1.08 128.32 5.80 36.79 -37.99 -3.10 -1.33 157.29 1600 -1.40 117.39 5.83 25.05 -37.52 -14.57 -1.49 152.31 1800 -1.94 106.19 6.17 10.83 -37.39 -27.07 -1.46 147.31 2000 -3.20 95.90 6.80 -7.89 -37.45 -42.22 -1.41 143.05 2200 -5.84 94.01 7.36 -33.75 -38.56 -69.38 -1.21 138.40 2400 -6.52 112.96 6.50 -64.88 -41.93 -115.31 -0.9 133.24 2600 -4.45 121.06 4.77 -92.83 -41.83 167.17 -0.4 126.56 2800 -2.44 117.78 2.24 -121.06 -38.13 103.07 -0.27 119.41 3000 -1.26 108.49 -1.12 -142.85 -34.99 62.15 -0.35 112.36 Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. - 3 of 20 - S22 (ang) Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier 700 - 800 MHz Application Circuit R7 R6 Vcc=+5V C7 C7 Vbias C17 D3 + R5 VREF R6 0 R4 R7 0 U1 C6 Vpd C3 DNP DNP D3 SM05T1G J2 10uF 6032 C17 R8 L1 C5 C9 J3 C15 L3 R1 R3 L4 R2 C10 L2 C11 C8 C14 J1 FB1 C1 J4 4.7uF 0805 C1 C12 1000pF J5 DNP C14 Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. Vref can be used as device power down voltage (low = RF off) by swapping R7 with R8. The edge of R5 is placed at 10 mils from the edge of AH322 RFin pin pad (1.5 @ 750 MHz) The edge of C8 is placed at 10 mils from the edge of component R5 (1.5 @ 750 MHz). The edge of C5 is placed at 170 mils from the edge of AH322 RFout pin pad (7 @ 750 MHz). L2 is placed against the edge of C9. L3 is critical for linearity performance. Do not exceed +5.5V supply or TVS diode D3 will be damaged. 0 jumpers may be replaced with copper traces in the target application layout. DNP implies Do Not Place. FB1 (Ferrite Bead) prevents bias line resonances by isolating C15 and C17. Steward MI0603K300R-10. R2 J1 RF Input C11 1000 pF 51 C10 100pF L2 2.2pF C 9 1.2 nH R5 R3 15 R1 56.2 L4 0 L3 0 2 3 C8 10 pF 1 8 1 4 U1 AH322 7 FB1 C15 47pF L1 33nH 1008 C3 C6 6 5 1.5 nH C5 10 pF C2 100pF DNP J2 RF Output 22pF Typical Performance 700 - 800 MHz Frequency MHz 700 750 800 Gain Input Return Loss Output Return Loss Output P1dB Channel Power @ 2.5% EVM [1] WCDMA Channel Power at -50 dBc ACLR [2] Output IP3(21 dBm/tone, 1 MHz spacing) [3] Supply Voltage, Vcc Quiescent Collector Current, Icq dB dB dB dBm dBm dBm dBm V mA 18.9 12.4 7.4 +32 +24.6 +22.5 +45.5 19.2 17 10.3 +32.5 +25.2 +23.1 +46 +5 600 19 15 16.7 +32 +24.6 +22.5 +44.2 Notes: 1. EVM Test set-up: 802.16 - 2004 OFDMA, 64QAM - 1/2, 1024 FFT, 20 symbols, 30 subchannels. 2. ACLR test set-up: 3GPP WCDMA, TM164 DPCH, 5MHz offset, PAR = 10.2 dB @ 0.01% Prob. 3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing. Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. - 4 of 20 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier Typical Performance Plots 700 - 800 MHz Small Signal Performance Return Loss vs. Frequency +25C 20 32 S22 P1dB (dBm) Return Loss (dB) -8 -12 17 15 29 -20 700 720 740 760 780 800 28 700 720 740 Frequency (MHz) 760 780 800 700 ACLR vs. Pout vs. Freq EVM (%) -50 4 800 700 MHz 750 MHz 800 MHz 50 700 MHz 750 MHz 800 MHz 780 1MHz Spacing, +25C 55 700 MHz 750 MHz 800 MHz 5 760 OIP3 vs. Pout/Tone vs. Freq OFDM, QAM-64, 54 Mb/s, +25C 6 -40 740 Frequency (MHz) EVM vs. Pout vs. Freq 7 -35 -45 720 Frequency (MHz) 3GPP WCDMA, TM1 64DPCH, 5MHz Offset, +25C -30 30 S11 -16 16 31 OIP3 (dBm) Gain (dB) 18 +25C 33 -4 19 ACLR (dBc) P1dB vs. Frequency +25C 0 45 3 40 2 -55 35 1 -60 0 20 21 22 23 24 25 26 Pout (dBm) Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. 27 30 20 21 22 23 24 Pout (dBm) - 5 of 20 - 25 26 27 16 18 20 22 24 26 Pout / tone (dBm) Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier 824 - 894 MHz Application Circuit R1 L3 L4 C9 U1 C6 VREF R6 0 R4 R7 0 C3 DNP DNP 0805 D3 SM05T1G J2 10uF 6032 C17 R8 Vpd C2 R2 C10 J3 C15 L1 C8 C11 L2 C14 J1 + C1 R3 J4 C7 Vbias FB1 C12 R7 R6 Vcc=+5V C7 C17 D3 4.7uF 0805 C1 C12 J5 1000pF 1.0 uF C14 Notes: 1. Vref can be used as device power down voltage (low = RF off) by swapping R7 with R8. 2. The edge of L2 is placed at 265 mils from edge of AH322 RFout pin pad (12 @ 850 MHz). 3. The edge of C2 is placed at 250 mils from edge of AH322 RFout pin pad (11 @ 850 MHz). 4. The edge of C8 is placed at 25 mils from edge of AH322 RFout pin pad (1 @ 850 MHz). 5. L1 is critical for linearity performance. 6. Do not exceed +5.5V supply or TVS diode D3 will be damaged. 7. Zero ohm jumpers may be replaced with copper traces in the target application layout. 8. DNP implies Do Not Place. 9. FB1 (Ferrite Bead) prevents bias line resonances by isolating C15 and C1.Steward MI0603K300R-10. R2 J1 RF Input C11 1000 pF R1 56.2 L4 0 L3 0 3 C10 100pF L2 3.9 pF 6.8pF C8 10 pF 8 1 2 C9 51 R3 15 4 U1 AH322 7 FB1 C15 47pF L1 33nH 1008 C3 C6 6 5 0 C5 DNP C2 100pF 8.2 pF J2 RF Output 22pF Typical Performance 824 - 894 MHz Frequency MHz 824 848 894 Gain Input Return Loss Output Return Loss Output P1dB Channel Power @ 2.5% EVM [1] WCDMA Channel Power at -50 dBc ACLR [2] Output IP3(21 dBm/tone, 1 MHz spacing) [3] Supply Voltage, Vcc Quiescent Collector Current, Icq dB dB dB dBm dBm dBm dBm V mA 19.7 16 7 +33.0 +24.4 +23.7 +46.2 19.7 16 8 +33 +24.4 +23.7 +46.3 +5 600 19.7 13 12 +32.6 +23.8 +23 +45.1 Notes: 1. 2. 3. EVM test set-up: IS-95CDMA, 9 channels fwd, 750KHz offset, 30KHz Meas BW, PAR=9.7 dB@ 0.01% Prob. ACLR test set-up: 3GPP WCDMA, TM164 DPCH, 5MHz offset, PAR = 10.34 dB @ 0.01% Prob. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing. Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. - 6 of 20 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier Typical Performance Plots 824 - 894 MHz Small Signal Performance Return Loss vs. Frequency +25C 20 33 17 S22 P1dB (dBm) Gain (dB) 18 -8 -12 16 S11 -20 800 820 840 860 880 900 820 840 ACLR vs. Pout vs. Freq 900 -40 -50 824 MHz 848 MHz 894 MHz -55 -60 23 24 25 Output Channel Power (dBm) Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. 26 860 880 900 1MHz spacing, 25C 47 -55 824 MHz 848 MHz 894 MHz -60 44 824 MHz 848 MHz 894 MHz 41 38 -70 22 840 OIP3 vs. Pout/Tone vs. Freq 50 -65 21 820 Frequency (MHz) OIP3 (dBm) -45 20 800 ACPR vs. Pout vs. Frequency ACPR (dBc) ACLR (dBc) 880 IS-95 CDMA, 9 CH. Fwd., 750 KHz offset Frequency, +25C -40 -35 -50 860 Frequency (MHz) 3GPP WCDMA,TM164DPCH,5MHz Offset Freq.,+25C -45 31 29 800 Frequency (MHz) -30 32 30 -16 15 +25C 34 -4 Return Loss (dB) 19 P1dB vs. Frequency +25C 0 35 20 21 22 23 24 Output Channel Power (dBm) - 7 of 20 - 25 26 18 20 22 24 26 Pout / tone (dBm) Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier 920 - 960 MHz Application Circuit (AH322-S8PCB900) J3 R6 0 C15 L3 R1 R3 L4 FB1 C12 J4 R7 R6 Vcc=+5V Vbias C17 D3 VREF R7 0 L1 C9 U1 C6 C3 C5 R2 C10 C8 C11 L2 J1 Vpd J2 0805 D3 SM05T1G C17 4.7uF 0805 C12 J5 1.0 uF R3 15 R1 56.2 L4 0 L3 0 Notes: 1. Vref can be used as device power down voltage (low = RF off) by swapping R7 with R8. 2. The edge of L2 is placed at 240 mils from the edge of AH322 RFin pin pad (12 @ 940 MHz) 3. The edge of C9 is placed at 75 mils from the edge of AH322 RFin pin pad (3.8 @ 940 MHz). 4. The edge of C8 is placed at 7 mils from the edge of AH322 RFin pin pad (0.3 @ 940 MHz) 5. The edge of C5 is placed at 192 mils from the edge of AH322 RFout pin pad (9.6 @ 940 MHz). 6. L1 is critical for linearity performance. 7. Do not exceed +5.5V supply or TVS diode D3 will be damaged. 8. 0 jumpers may be replaced with copper traces in the target application layout. 9. DNP implies Do Not Place. 10. FB1 (Ferrite Bead) prevents bias line resonances by isolating C15 and C17. Steward MI0603K300R-10. R2 8 1 C11 J1 51 2 C9 3 RF Input C10 100pF 2.7 pF L2 12.0 nH C8 10 pF 4 U1 AH322 7 FB1 C15 100pF L1 33nH 1008 C3 C6 6 5 0 C5 8.2 pF 100pF J2 RF Output 22pF Typical Performance 920 - 960 MHz Frequency MHz 920 940 960 Gain Input Return Loss Output Return Loss Output P1dB WCDMA Channel Power at -50 dBc ACLR [1] Output IP3 (21 dBm/tone, 1 MHz spacing) [2] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq dB dB dB dBm dBm dBm dB V mA 19.1 10.6 7.1 +32.8 +23.6 +47.6 7.5 19.3 13 7.5 +32.8 +23.6 +47.3 7.9 +5 600 19.4 14.3 8.3 +32.5 +23.6 +46.9 8.3 Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM164 DPCH, 5MHz offset, PAR=10.2dB@0.01% Prob. 2. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing. Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. - 8 of 20 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier Typical Performance Plots 920 - 960 MHz Gain vs. Frequency 22 19 18 17 34 S22 P1dB (dBm) Output Return Loss (dB) 20 -5 -10 S11 -15 -20 930 940 950 960 930 940 950 960 920 OIP3 (dBm) ACLR (dBc) Noise Figure (dB) -45 920 MHz 940 MHz 960 MHz -50 -60 Frequency (MHz) Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. 960 920 MHz 940 MHz 960 MHz 46 45 44 -55 950 960 47 -40 8 7 950 1 MHz spacing, 25C 48 -35 8 940 OIP3 vs. Pout/Tone over Frequency 3GPP WCDMA, TM 64DPCH, 5MHz Offset, +25C -30 9 940 930 Frequency (MHz) ACLR vs. Pout vs Freq. +25C 930 31 Frequency (MHz) Noise Figure vs. Frequency 920 32 29 920 Frequency (MHz) 9 33 30 -25 920 +25C 35 Temp.=+25C 21 Gain (dB) P1dB vs. Frequency Return Loss vs. Frequency 0 Temp.=+25C 43 19 21 23 Output Power (dBm) - 9 of 20 - 25 27 16 18 20 22 24 26 Pout/tone (dBm) Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier 1805 - 1880 MHz Application Circuit C14 R2 C10 C9 R7 0 U1 C6 C3 DNP DNP 0805 D3 SM05T1G J2 10uF 6032 C17 R8 Vpd C5 C11 VREF R6 0 R4 L1 C8 J1 + J3 C15 L3 L4 R1 R3 J4 C7 Vbias C1 FB1 C12 R7 R6 Vcc=+5V C7 C17 D3 4.7uF 0805 C1 C12 1000pF J5 1.0 uF Notes: R2 1. Vref can be used as device power down voltage (low = RF off) by swapping R7 with R8. 2. The edge of C5 is placed at 315 mils from the edge of AH322 RFout pin pad (31 @ 1840 MHz). 3. C8 is placed against the edge of C9. 4. The multilayer inductor L3 (82nH) is critical for linearity performance. 5. Do not exceed +5.5V supply or TVS diode D3 will be damaged. 6. 0 jumpers may be replaced with copper traces in the target application layout. 7. DNP implies Do Not Place. 8. FB1 (Ferrite Bead) prevents bias line resonances by isolating C15 and C1.Steward MI0603K300R-10. C11 J1 R3 15 R1 68 C14 L4 0 L3 82 nH 1000 pF 1 2 C9 51 3 RF Input C10 100pF L2 DNP 1.3 pF C8 1.5 pF 4 8 U1 AH322 7 FB1 C15 10pF L1 22nH 1008 C3 C6 6 5 3.3 pF C5 3 pF C2 100pF DNP J2 RF Output 22pF Typical Performance 1805 - 1880 MHz Frequency MHz 1805 1840 1880 Gain Input Return Loss Output Return Loss Output P1dB WCDMA Channel Power at -50 dBc ACLR [1] Output IP3(21 dBm/tone, 1 MHz spacing) [2] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq dB dB dB dBm dBm dBm dB V mA 14.3 17 7.7 +33 +23.2 +47.9 4.9 14.6 19 11.3 +33.1 +24.1 +49.5 4.9 +5 500 14.7 15 20 +32.3 +22.5 +44.6 4.9 Notes: 1. ACLR test set-up: 3GPP WCDMA, TM164 DPCH, 5MHz offset, PAR=10.2dB @ 0.01% Prob. 2. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing. Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. - 10 of 20 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier Typical Performance Plots 1805 - 1880 MHz S21 vs. Frequency 0 13 12 11 -5 S22 P1dB (dBm) Return Loss (dB) S21 (dB) +25C 34 33 14 -10 -15 S11 -20 10 1800 1820 1840 1860 1880 -25 1800 1900 1820 1840 1860 1880 ACLR (dBc) -45 540 40 500 22 23 24 25 26 Output Power / Tone (dBm) Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. 1880 1900 1805 MHz 1840 MHz 1880 MHz -50 -55 520 35 1860 ACLR vs. Pout vs. Freq Icc (mA) 45 1840 3GPP WCDMA, TM164DPCH, 5MHz Offset, +25C -40 580 21 1820 Frequency (MHz) 560 20 28 1800 1900 3GPP WCDMA, TM164DPCH, 5MHz Offset, +25C 600 1805 MHz 1840 MHz 1880 MHz 19 30 Icc vs. Pout 1 MHz spacing, 25C 50 31 Frequency (MHz) OIP3 vs Pout/Tone vs. Freq 55 32 29 Frequency (MHz) OIP3 (dBm) P1dB vs. Frequency Return Loss vs. Frequency +25C +25C 15 -60 20 21 22 23 Pout (dBm) - 11 of 20 - 24 25 20 21 22 23 24 25 Output Power (dBm) Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier 1930 - 1990 MHz Application Circuit (AH322-S8PCB1960) Vcc=+5V R7 R6 C7 Vbias C7 + D3 R1 L3 FB1 R3 L4 C1 J4 R6 0 J3 C15 VREF R7 0 Vpd L1 R2 C10 C9 U1 C6 C3 C5 C11 C8 J1 10uF 6032 J2 D3 SM05T1G C1 C12 J5 4.7 uF 1.0 uF Notes: 1. Vref can be used as device power down voltage (low = RF off) by swapping R7 with R8. 2. The edge of C9 is placed at 100 mils from the edge of AH322 RFin pin pad (10.5 @ 1960 MHz). 3. The edge of C8 is placed at 40 mils from the edge of AH322 RFin pin pad (4.2 @ 1960 MHz). 4. The edge of C6 is placed at 110 mils from the edge of AH322 RFout pin pad (11.5 @ 1960 MHz). 5. The edge of C5 is placed at 210 mils from the edge of AH322 RFout pin pad (11 @ 1960 MHz). 6. The multilayer inductor L3 (82nH) is critical for linearity performance. 7. Do not exceed +5.5V supply or TVS diode D3 will be damaged. 8. 0 jumpers may be replaced with copper traces in the target application layout. 9. DNP implies Do Not Place. 10. FB1 (Ferrite Bead) prevents bias line resonances by isolating C15 and C1.Steward MI0603K300R-10. R3 15 R1 68 L4 0 L3 82 nH R2 8 1 C11 J1 2 C9 51 3 RF Input C10 22 pF L2 DNP 1.8 pF C8 1.2 pF U1 AH322 4 7 FB1 C15 10pF L1 22nH 1008 C3 C6 6 5 4.7 pF C5 22 pF 2.7 pF J2 RF Output 22pF Typical Performance 1930 - 1990 MHz Frequency MHz 1930 1960 1990 Gain Input Return Loss Output Return Loss Output P1dB WCDMA Channel Power at -50 dBc ACLR [1] Output IP3(21 dBm/tone, 1 MHz spacing) [2] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq dB dB dB dBm dBm dBm dB V mA 14.0 14.5 8.5 +33.2 +23 +49.0 4.6 14.1 12.6 10.9 +33.2 +23.7 +48.5 4.6 +5 500 14.1 11.0 13.6 +32.9 +23.3 +46.4 4.6 Notes: 1. ACLR test set-up: 3GPP WCDMA, TM164 DPCH, 5MHz offset, PAR=10.2dB @ 0.01% Prob. 2. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing. Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. - 12 of 20 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier Typical Performance Plots 1930 - 1990 MHz S21 vs. Frequency Return Loss vs. Frequency +25C 15 12 11 33 S22 -8 -12 S11 -16 1940 1950 1960 1970 1980 1990 -20 1930 1940 Frequency (MHz) 1960 1970 1980 ACLR (dBc) 45 1990 MHz 1930 MHz 1960 MHz 30 22 24 Pout / Tone (dBm) Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. 26 1960 1970 1980 1990 1980 1990 OIP3 vs. Frequency 1 MHz, +25C 50 -50 45 40 35 -60 20 1950 55 -55 35 18 1940 Frequency (MHz) 1990 MHz 1930 MHz 1960 MHz -45 16 29 1930 1990 3GPP WCDMA, TM1+64DPCH, 5MHz Offset, +25C -40 50 OIP3 (dBm) 1950 ACLR vs. Pout vs. Freq 1 MHz spacing, +25C 40 31 Frequency (MHz) OIP3 vs. Pout/Tone vs. Freq 55 32 30 OIP3 (dBm) 10 1930 P1dB (dBm) 13 +25C 34 -4 Magnitude (dB) S21 (dB) 14 P1dB vs. Frequency +25C 0 20 21 22 23 24 Channel Output Power (dBm) - 13 of 20 - 25 26 30 1930 1940 1950 1960 1970 Frequency (MHz) Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier 2110 - 2170 MHz Application Circuit (AH322-S8PCB2140) R7 R6 Vcc=+5V C7 C7 Vbias C1 C14 C9 C6 VREF R7 0 10uF 6032 Vpd C3 C5 C11 R6 0 L1 U1 C8 J1 R2 C10 J3 C15 L3 L4 R1 R3 J4 + D3 FB1 C12 0805 C1 D3 SM05T1G J2 C12 1000pF J5 1.0 uF Notes: 1. Vref can be used as device power down voltage (low = RF off) by swapping R7 with R8. 2. The edge of C5 is placed at 195 mils from the edge of AH322 RFout pin pad (22 @ 2140 MHz). 3. The edge of C8 is placed at 0.5 mils from the edge of AH322 RFin pin pad (0 @ 2140 MHz). 4. The edge of C9 is placed at 85 mils from the edge of AH322 RFin pin pad (9.9 @ 2140 MHz). 5. The multilayer inductor L3 (82 nH) is critical for linearity performance. 6. Zero ohm jumpers may be replaced with copper traces in the target application layout. 7. DNP means Do Not Place. 8. FB1 (Ferrite Bead) prevents bias line resonances by isolating C15 and C1.Steward MI0603K300R-10. R2 J1 RF Input C11 51 C9 C10 2.4 pF R3 15 R1 68 C14 L4 0 L3 82 nH 1000 pF 1 2 3 100pF L2 DNP C8 0.8 pF 4 8 U1 AH322 7 FB1 C15 10pF L1 18nH 1008 C3 C6 6 5 3.6 pF C5 2.4 pF C2 22pF DNP J2 RF Output 22pF Typical Performance 2110 - 2170 MHz Frequency MHz 2110 2140 2170 Gain Input Return Loss Output Return Loss Output P1dB WCDMA Channel Power at -50 dBc ACLR [1] Output IP3(24 dBm/tone, 1 MHz spacing) [2] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq dB dB dB dBm dBm dBm dB V mA 13.6 11 11 +32.9 +23.8 +47.9 4.7 13.7 10.2 14 +32.6 +23.4 +50 4.7 +5 500 13.7 10 17.5 +32.5 +23 +49.8 4.7 Notes: 1. ACLR test set-up: 3GPP WCDMA, TM164 DPCH, 5MHz offset PAR = 10.2 dB @ 0.01% Prob. 2. OIP3 is measured at 24 dBm / tone output power with 1 MHz spacing. Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. - 14 of 20 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier Typical Performance Plots 2110 - 2170 MHz Gain vs. Frequency Return Loss vs. Frequency 25C 15 33 12 11 10 S22 -10 S11 -15 2120 2130 2140 2150 Frequency (MHz) 2160 2170 31 29 2110 Icc vs. Pout 2120 2130 2140 2150 Frequency (MHz) 2160 2170 2110 ACLR vs. Pout over Frequency 2140 MHz,3GPP WCDMA,TM1+64DPCH,5MHz Offset,25C 620 32 30 -20 2110 2120 2130 2140 2150 Frequency (MHz) 2160 2170 OIP3 vs. Pout/tone over Frequency 3GPP WCDMA, TM1+64DPCH, 5MHz Offset, 25C -40 1 MHz Spacing, 25C 60 55 ACLR (dBc) -45 580 560 2110 MHz 2170 MHz 2140 MHz OIP3 (dBm) 600 Icc (mA) P1dB (dBm) 13 25C 34 -5 Magnitude (dB) Gain (dB) 14 P1dB vs. Frequency 25C 0 -50 -55 540 520 21 22 23 24 Pout (dBm) 25 Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. 26 45 2110 MHz 2170 MHz 2140 MHz 40 -60 20 50 35 21 22 23 24 Pout (dBm) - 15 of 20 - 25 26 20 21 22 23 24 Pout/tone (dBm) 25 26 Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier 2570 - 2740 MHz Application Circuit C14 C9 R7 0 U1 C6 C3 DNP DNP 0805 D3 SM05T1G J2 10uF 6032 C17 R8 Vpd C5 R2 C10 C8 C11 VREF R6 0 R4 L1 R5 J1 + J3 C15 L3 L4 R1 R3 J4 C7 Vbias C1 FB1 C12 R7 R6 Vcc=+5V C7 C17 D3 4.7uF 0805 C1 C12 J5 1000pF 1.0 uF Notes: 1. Vref can be used as device power down voltage (low = RF off) by swapping R7 with R8. 2. The edge of C5 is placed at 160 mils from the edge of AH322 RFout pin pad (22.6 @ 2655 MHz). 3. The edge of C8 is placed at 0.5 mils from the edge of AH322 RFout pin pad (0 @ 2655 MHz). 4. The multilayer inductor L3 (82 nH) is critical for linearity performance. 5. Zero ohm jumpers may be replaced with copper traces in the target application layout. 6. DNP means Do Not Place. 7. FB1 (Ferrite Bead) prevents bias line resonances by isolating C15 and C1.Steward MI0603K300R-10. R2 C11 J1 R3 15 R1 68 C14 L4 0 L3 82 nH 1000 pF 1 2 C9 51 3 RF Input C10 100pF L2 DNP 1.8 pF C8 0.8 pF 4 8 U1 AH322 7 FB1 C15 10pF L1 12nH 1008 C3 C6 6 5 2.0 pF C5 1.8 pF C2 100pF DNP J2 RF Output 22pF Typical Performance 2570 - 2740 MHz Frequency MHz 2570 2655 2740 Gain Input Return Loss Output Return Loss Output P1dB Channel Power @ 2.5% EVM [1] WCDMA Channel Power at -50 dBc ACLR [2] Output IP3(21 dBm/tone, 1 MHz spacing) [3] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq dB dB dB dBm dBm dBm dBm dB V mA 11.8 26.7 6 +31.7 +23.9 +21.6 +44.4 5.9 12.6 20 9.3 +31.9 +24.5 +22.6 +45.1 6.2 +5 500 11.8 10.2 7 +30.4 +23 +21 +43.3 6.7 Notes: 1. EVM Test set-up: 802.16 - 2004 OFDMA, 64QAM - 1/2, 1024 FFT, 20 symbols, 30 subchannels. 2. ACLR Test set-up: 3GPP WCDMA, TM164 DPCH, 5MHz offset PAR = 10.2 dB @ 0.01% Prob. 3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing. Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. - 16 of 20 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier Typical Performance Plots 2570 - 2740 MHz Small Signal Performance Return Loss vs. Frequency +25C 5 -10 4 Return Loss (dB) Gain (dB) -15 10 S22 S11 -20 9 8 2570 2630 2660 2690 2720 2750 -30 2570 ACLR vs. Pout vs. Freq 2690 2720 2750 17 -50 -55 -60 20 21 22 20 23 24 Output Channel Power (dBm) Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. 25 22 23 24 25 46 32 31 30 28 2570 21 1 MHz spacing, 25C 50 42 2570 MHz 2655 MHz 2740 MHz 38 34 29 19 19 OIP3 vs Pout/Tone vs. Freq +25C OIP3 (dBm) -45 18 18 Pout (dBm) 33 P1dB (dBm) ACLR (dBc) 2660 P1dB vs. Frequency 34 2740 MHz 2655 MHz 2570 MHz -40 2630 Frequency (MHz) 3GPP WCDMA, TM1+64DPCH, +5MHz offset, +25C -35 2 0 2600 Frequency (MHz) -30 2740 MHz 2655 MHz 2570 MHz 3 1 -25 2600 OFDM, QAM-64-1/2, 54Mb/s 6 -5 12 11 EVM vs Pout vs. Freq +25C 0 EVM (%) 13 30 2600 2630 2660 2690 Frequency (MHz) - 17 of 20 - 2720 2750 18 20 22 24 26 Pout/tone (dBm) Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier Pin Description Pin 1 Reference Mark Vbias 1 8 Iref N/C 2 7 RF_Out RF_In 3 6 RF_Out N/C 4 5 N/C Backside Paddle - RF/DC GND Pin Symbol Description 1 2, 4, 5 3 6 7 Vbias N/C RF_in RF_out RF_out 8 Iref Backside Paddle RF/DC GND Voltage supply for active bias. Connect to same supply voltage as Vcc. No internal connection. This pin can be grounded or N/C on PCB. RF Input. Requires matching for operation. RF Output and DC supply voltage. See pin 6. Reference current into internal active bias current mirror. Current into Iref sets device quiescent current. Also, can be used as on/off control. Use recommended via pattern shown on page 20 and ensure good solder attach for optimum thermal and electrical performance. Application Board Information PC Board Layout Top RF layer is .014" Getek, r = 4.0, 4 total layers (0.062" thick) for mechanical rigidity. Metal layers are 1oz copper. Microstrip line details: width = .030", spacing = .026". The silk screen markers A, B, C, etc. and 1, 2, 3, etc. are used as placemarkers for the input and output tuning shunt capacitors - C8, C5 and C2. The markers and vias are spaced in .050" increments. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical www.TriQuint.com information, Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. Refer to - 18 of 20 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier Mechanical Information Package Information and Dimensions This package is lead-free/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes. The AH225 will be marked with an "AH322G" designator with a lot code marked below the part designator. The "Y" represents the last digit of the year the part was manufactured, the "XXXX" is an autogenerated number, and "Z" refers to a wafer number in a lot batch. Mounting Configuration Notes: 1. A heat sink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010") or equivalent. 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heat sink. Ensure that the ground / thermal via region contact the heat sink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heat sink. 6. RF Trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters (inches). Angles are in degrees. Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. - 19 of 20 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network AH322 2W High Linearity InGaP HBT Amplifier Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260. ESD Rating: Value: Test: Standard: Class 1C Passes 1000 V to < 2000V. Human Body Model (HBM) JEDEC Standard JESD22A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000 V min. Charged Device Model (CDM) JEDEC Standard JESD22C101 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free MSL Rating The part is rated Moisture Sensitivity Level 3 at 260C per JEDEC standard IPC/JEDEC J-STD-020. Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@tqs.com Tel: Fax: +1.503.615.9000 +1.503.615.8902 For technical questions and application information: Email: sjcapplications.engineering@tqs.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev B 05/14/2012 (c) 2012 TriQuint Semiconductor, Inc. - 20 of 20 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global (R) Network