AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 1 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
Applications
SOIC-8 Package
Repeaters
Base Station Transceivers
High Power Amplifiers
Mobile Infrastructure
LTE / WCDMA / CDMA / WiMAX
Product Features
Functional Block Diagram
400-2700 MHz
13.7 dB Gain at 2140 MHz
+33 dBm P1dB
+50 dBm Output IP3
500 mA Quiescent Current
+5 V Single Supply
MTTF > 100 Years
Lead-free/RoHS-compliant SOIC-8 Package
1
2
3
4
8
7
6
5
Vbias
N/C
RF_In
N/C
Iref
RF_Out
RF_Out
N/C
Backside Paddle - RF/DC GND
Pin 1 Reference Mark
General Description
Pin Configuration
The AH322 is a high dynamic range driver amplifier in a
low-cost surface-mount package. The InGaP/GaAs HBT
is able to achieve high performance for various
narrowband-tuned application circuits with up to +50
dBm OIP3 and +33 dBm of compressed 1dB power. The
integrated active bias circuitry in the devices enables
excellent stable linearity performance over temperature. It
is housed in a lead-free/RoHS-compliant SOIC-8 package.
All devices are 100% RF and DC tested.
The AH322 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. The AH322 is ideal for the final stage
of small repeaters or as driver stages for high power
amplifiers. In addition, the amplifier can be used for a
wide variety of other applications within the 400 to 2700
MHz frequency band.
Pin #
Symbol
1
Vbias
2, 4, 5
N/C
3
RF_in
6, 7
RF_Out
8
Iref
Backside Paddle
RF/DC GND
Ordering Information
Part No.
Description
AH322-S8G
2W High Linearity Amplifier
Standard T/R size = 1000 pieces on a 7” reel.
Not Recommended for
New Designs
Recommended Replacement
Part: TQP7M9104
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 2 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
Specifications
Absolute Maximum Ratings
Parameter
Rating
Storage Temperature
-65 to 150 °C
RF Input Power, CW, 50Ω, T=25°C
+10 dBm
Device Voltage,Vcc, Vbias
+8 V
Device Current
1400 mA
Device Power
+8 W
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min
Typ
Max
Units
Vcc
+4.5
+5
+5.25
V
Tcase
-40
+85
°C
TJ (for >106 hours MTTF)
+200
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: Vcc = +5 V, Icq = 500 mA, T = +25°C, in a tuned application circuit.
Parameter
Conditions
Min
Typical
Max
Units
Operational Frequency Range
400
2700
MHz
Test Frequency
2140
MHz
Gain
13.7
dB
Input Return Loss
10.2
dB
Output Return Loss
14
dB
Output P1dB
+31.4
+32.6
dBm
Output IP3
See Note 1
+45
+50.0
dBm
WCDMA Channel Power at -50 dBc ACLR
See Note 2
+23.4
dBm
Noise Figure
4.7
dB
Vcc, Vbias
+5
V
Quiescent Current, Icq
See Note 3
435
500
600
mA
Iref
30
mA
Thermal Resistance (jnc. to case) jc
18.6
°C/W
Notes:
1. OIP3 measured with two tones at an output power of +24 dBm / tone separated by 1 MHz, 2140 MHz. The suppression on the largest IM3
product is used to calculate the OIP3 using a 2:1 rule.
2. 3GPP WCDMA, 1±64DPCH, ±5 MHz, no clipping, PAR = 10.2 dB at 0.01% Probability.
3. This corresponds to the quiescent collector current or operating current under small-signal conditions into pins 6 and 7.
Performance Summary Table
Test conditions unless otherwise noted: Vcc = +5 V, Icq = 500 mA, T = +25°C, in an application circuit tuned for each frequency.
Frequency
750
940
1840
1960
2140
2655
MHz
Gain
19.2
19.3
14.6
14.1
13.7
12.6
dB
Input Return Loss
17
13
19
12.6
10.2
20
dB
Output Return Loss
10.3
7.5
11.3
10.9
14
9.3
dB
Output P1dB
+32.5
+32.8
+33.1
+33.2
+32.6
+31.9
dBm
Output IP3 [See note 1]
+46
+47.3
+49.5
+48.5
+50.0
+45.1
dBm
WCDMA Channel Power at -50 dBc ACLR
+23.1
+23.5
+24.1
+23.7
+23.4
+22.6
dBm
Notes:
1. OIP3 is measured at 21 dBm / tone separated by 1 MHz, 750 MHz, 940 MHz, 1840 MHz, 1960 MHz, and 2655 MHz. OIP3 is measured at 24 dBm /
tone separated by 1 MHz, 2140 MHz.
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 3 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
Device Characterization Data
-5
0
5
10
15
20
25
30
35
40
45
0 0.5 1 1.5 2 2.5 3
Gain (dB)
Frequency (GHz)
Gain / Maximum Stable Gain
Gain (MAX)
Gain
-1
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
0.8
1
-1 -0.75-0.5-0.25 0 0.250.50.75 1
Input Smith Chart
0.05 GHz
3 GHz
Output Smith Chart
0.05 GHz
3 GHz
Note: The gain for the unmatched device in 50 ohm system is shown as the trace in pink color, [DB (S (2, 1)]. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the blue line [DB (GMAX)]. The
impedance plots are shown from 0.05 – 3 GHz.
S-Parameter Data
Vcc = +5 V, Icq = 500 mA, T = +25°C, unmatched 50 ohm system, calibrated to device leads
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
-0.74
-174.58
29.75
109.51
-43.47
25.51
-1.15
-135.3
100
-0.53
-179.31
24.21
98.59
-43.22
17.83
-1.22
-157.31
200
-0.45
176.71
18.46
89.55
-42.49
8.135
-1.19
-170.3
400
-0.44
170.07
12.77
80.82
-42.04
5.31
-1.22
-178.39
600
-0.56
163.11
9.78
73.71
-41.41
10.52
-1.18
176.07
700
-0.61
159.9
8.73
69.49
-41.21
11.31
-1.12
173.93
800
-0.64
156.03
7.94
65.68
-40.26
12.50
-1.17
171.69
1000
-0.78
147.66
6.80
56.95
-39.65
7.88
-1.22
166.82
1200
-0.87
138.49
6.11
46.99
-38.34
2.45
-1.26
162.15
1400
-1.08
128.32
5.80
36.79
-37.99
-3.10
-1.33
157.29
1600
-1.40
117.39
5.83
25.05
-37.52
-14.57
-1.49
152.31
1800
-1.94
106.19
6.17
10.83
-37.39
-27.07
-1.46
147.31
2000
-3.20
95.90
6.80
-7.89
-37.45
-42.22
-1.41
143.05
2200
-5.84
94.01
7.36
-33.75
-38.56
-69.38
-1.21
138.40
2400
-6.52
112.96
6.50
-64.88
-41.93
-115.31
-0.9
133.24
2600
-4.45
121.06
4.77
-92.83
-41.83
167.17
-0.4
126.56
2800
-2.44
117.78
2.24
-121.06
-38.13
103.07
-0.27
119.41
3000
-1.26
108.49
-1.12
-142.85
-34.99
62.15
-0.35
112.36
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 4 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
700 - 800 MHz Application Circuit
C8
10 pF
L2
2.2pF
C1
1000pF
C17
4.7uF
0805
C7
10uF
6032
C
9
1.2
nH
J1
RF
Input
R2
51 R5
1
C11
100pF C10
22pF
C15
47pF
C6
1.5 nH
R3
15
R6
0R7
0
R8
DNP
VREF
Vcc=+5V
Vpd
R1
56.2 FB1
L4
0L30L1
33nH
1008
U1
AH322
1
2
3
4
8
7
6
5
Vbias +
D3
SM05T1G
C3
100pF RF
Output
J2
C5
10 pF C2
DNP
DNP
R4
C14
1000 pF
C12
DNP
Typical Performance 700 - 800 MHz
Frequency
MHz
700
750
800
Gain
dB
18.9
19.2
19
Input Return Loss
dB
12.4
17
15
Output Return Loss
dB
7.4
10.3
16.7
Output P1dB
dBm
+32
+32.5
+32
Channel Power @ 2.5% EVM [1]
dBm
+24.6
+25.2
+24.6
WCDMA Channel Power at -50 dBc ACLR [2]
dBm
+22.5
+23.1
+22.5
Output IP3(21 dBm/tone, 1 MHz spacing) [3]
dBm
+45.5
+46
+44.2
Supply Voltage, Vcc
V
+5
Quiescent Collector Current, Icq
mA
600
Notes:
1. EVM Test set-up: 802.16 – 2004 OFDMA, 64QAM – ½, 1024 FFT, 20 symbols, 30 subchannels.
2. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset, PAR = 10.2 dB @ 0.01% Prob.
3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing.
Notes:
1. Vref can be used as device power down voltage (low = RF off) by
swapping R7 with R8.
2. The edge of R5 is placed at 10 mils from the edge of AH322 RFin pin
pad (1.5 º @ 750 MHz)
3. The edge of C8 is placed at 10 mils from the edge of component R5
(1.5 º @ 750 MHz).
4. The edge of C5 is placed at 170 mils from the edge of AH322 RFout
pin pad (7 º @ 750 MHz).
5. L2 is placed against the edge of C9.
6. L3 is critical for linearity performance.
7. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
8. 0 Ω jumpers may be replaced with copper traces in the target
application layout.
9. DNP implies Do Not Place.
10. FB1 (Ferrite Bead) prevents bias line resonances by isolating C15 and
C17. Steward MI0603K300R-10.
R5 C3
J5
J3
J1 J2
C15
R2
C10
C11
C8
C5
C1
J4
L1
C7
C9
L2
R3
R1L3
L4 R6
R7
FB1
C17
D3
C6
U1
C14
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 5 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
Typical Performance Plots 700 - 800 MHz
15
16
17
18
19
20
700 720 740 760 780 800
Gain (dB)
Frequency (MHz)
Small Signal Performance
+25C
-20
-16
-12
-8
-4
0
700 720 740 760 780 800
Return Loss (dB)
Frequency (MHz)
Return Loss vs. Frequency
+25ºC
S11
S22
28
29
30
31
32
33
700 720 740 760 780 800
P1dB (dBm)
Frequency (MHz)
P1dB vs. Frequency
+25ºC
-60
-55
-50
-45
-40
-35
-30
20 21 22 23 24 25 26 27
ACLR (dBc)
Pout (dBm)
ACLR vs. Pout vs. Freq
3GPP WCDMA, TM1± 64DPCH, ±5MHz Offset, +25ºC
700 MHz
750 MHz
800 MHz
0
1
2
3
4
5
6
7
20 21 22 23 24 25 26 27
EVM (%)
Pout (dBm)
EVM vs. Pout vs. Freq
OFDM, QAM-64, 54 Mb/s, +25ºC
700 MHz
750 MHz
800 MHz
30
35
40
45
50
55
16 18 20 22 24 26
OIP3 (dBm)
Pout / tone (dBm)
OIP3 vs. Pout/Tone vs. Freq
1MHz Spacing, +25ºC
700 MHz
750 MHz
800 MHz
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 6 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
824 - 894 MHz Application Circuit
C8
10 pF
L2
6.8pF
C1
1000pF
C17
4.7uF
0805
C7
10uF
6032
C9
3.9 pF
J1
RF
Input
R2
51
C11
100pF C10
22pF
C15
47pF
C6
0
R3
15
R6
0R7
0
R8
DNP
VREF
Vcc=+5V
Vpd
R1
56.2 FB1
L4
0L30L1
33nH
1008
U1
AH322
1
2
3
4
8
7
6
5
Vbias +
D3
SM05T1G
C3
100pF RF
Output
J2
C5
DNP C2
8.2 pF
DNP
R4
C14
1000 pF
C12
1.0 uF
0805
Typical Performance 824 - 894 MHz
Frequency
MHz
824
848
894
Gain
dB
19.7
19.7
19.7
Input Return Loss
dB
16
16
13
Output Return Loss
dB
7
8
12
Output P1dB
dBm
+33.0
+33
+32.6
Channel Power @ 2.5% EVM [1]
dBm
+24.4
+24.4
+23.8
WCDMA Channel Power at -50 dBc ACLR [2]
dBm
+23.7
+23.7
+23
Output IP3(21 dBm/tone, 1 MHz spacing) [3]
dBm
+46.2
+46.3
+45.1
Supply Voltage, Vcc
V
+5
Quiescent Collector Current, Icq
mA
600
Notes:
1. EVM test set-up: IS-95CDMA, 9 channels fwd, ±750KHz offset, 30KHz Meas BW, PAR=9.7 dB@ 0.01% Prob.
2. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset, PAR = 10.34 dB @ 0.01% Prob.
3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing.
Notes:
1. Vref can be used as device power down voltage (low = RF off) by
swapping R7 with R8.
2. The edge of L2 is placed at 265 mils from edge of AH322 RFout pin pad
(12º @ 850 MHz).
3. The edge of C2 is placed at 250 mils from edge of AH322 RFout pin pad
(11º @ 850 MHz).
4. The edge of C8 is placed at 25 mils from edge of AH322 RFout pin pad
(1º @ 850 MHz).
5. L1 is critical for linearity performance.
6. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
7. Zero ohm jumpers may be replaced with copper traces in the target
application layout.
8. DNP implies Do Not Place.
9. FB1 (Ferrite Bead) prevents bias line resonances by isolating C15 and
C1.Steward MI0603K300R-10.
C3
J5
J3
J1 J2
C15
R2
C10
C11
C8
C2
C1
J4
L1
C7
C9
L2
R3
R1L3
L4 R6
R7
FB1
C17
D3
C6
U1
C14
C12
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 7 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
Typical Performance Plots 824 - 894 MHz
15
16
17
18
19
20
800 820 840 860 880 900
Gain (dB)
Frequency (MHz)
Small Signal Performance
+25ºC
-20
-16
-12
-8
-4
0
800 820 840 860 880 900
Return Loss (dB)
Frequency (MHz)
Return Loss vs. Frequency
+25ºC
S11
S22
29
30
31
32
33
34
800 820 840 860 880 900
P1dB (dBm)
Frequency (MHz)
P1dB vs. Frequency
+25ºC
-60
-55
-50
-45
-40
-35
-30
20 21 22 23 24 25 26
ACLR (dBc)
Output Channel Power (dBm)
ACLR vs. Pout vs. Freq
3GPP WCDMA,TM1±64DPCH,±5MHz Offset Freq.,+25ºC
824 MHz
848 MHz
894 MHz
-70
-65
-60
-55
-50
-45
-40
20 21 22 23 24 25 26
ACPR (dBc)
Output Channel Power (dBm)
ACPR vs. Pout vs. Frequency
IS-95 CDMA, 9 CH. Fwd., ±750 KHz offset Frequency, +25ºC
824 MHz
848 MHz
894 MHz
35
38
41
44
47
50
18 20 22 24 26
OIP3 (dBm)
Pout / tone (dBm)
OIP3 vs. Pout/Tone vs. Freq
1MHz spacing, 25ºC
824 MHz
848 MHz
894 MHz
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 8 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
920 - 960 MHz Application Circuit (AH322-S8PCB900)
C8
10 pF
L2
12.0 nH
C17
4.7uF
0805
C9
2.7 pF
J1
RF
Input
R2
51
C11
100pF C10
22pF
C15
100pF
C6
0
R3
15
R6
0R7
0
VREF
Vcc=+5V
Vpd
R1
56.2 FB1
L4
0L3
0L1
33nH
1008
U1
AH322
1
2
3
4
8
7
6
5
Vbias
D3
SM05T1G
C3
100pF RF
Output
J2
C5
8.2 pF
C12
1.0 uF
0805
Typical Performance 920 - 960 MHz
Frequency
MHz
920
940
960
Gain
dB
19.1
19.3
19.4
Input Return Loss
dB
10.6
13
14.3
Output Return Loss
dB
7.1
7.5
8.3
Output P1dB
dBm
+32.8
+32.8
+32.5
WCDMA Channel Power at -50 dBc ACLR [1]
dBm
+23.6
+23.6
+23.6
Output IP3 (21 dBm/tone, 1 MHz spacing) [2]
dBm
+47.6
+47.3
+46.9
Noise Figure
dB
7.5
7.9
8.3
Supply Voltage, Vcc
V
+5
Quiescent Collector Current, Icq
mA
600
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset, PAR=10.2dB@0.01% Prob.
2. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing.
Notes:
1. Vref can be used as device power down voltage (low = RF off) by swapping
R7 with R8.
2. The edge of L2 is placed at 240 mils from the edge of AH322 RFin pin pad
(12 º @ 940 MHz)
3. The edge of C9 is placed at 75 mils from the edge of AH322 RFin pin pad
(3.8 º @ 940 MHz).
4. The edge of C8 is placed at 7 mils from the edge of AH322 RFin pin pad
(0.3 º @ 940 MHz)
5. The edge of C5 is placed at 192 mils from the edge of AH322 RFout pin pad
(9.6 º @ 940 MHz).
6. L1 is critical for linearity performance.
7. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
8. 0 Ω jumpers may be replaced with copper traces in the target application
layout.
9. DNP implies Do Not Place.
10. FB1 (Ferrite Bead) prevents bias line resonances by isolating C15 and
C17. Steward MI0603K300R-10.
C9 C3
J5
J3
J1 J2
C15
R2
C10
C11
C5
C12
J4
L1
L2
R3
R1L3
L4 R6
R7
FB1
C17
D3
C6
U1
C8
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 9 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
Typical Performance Plots 920 - 960 MHz
17
18
19
20
21
22
920 930 940 950 960
Gain (dB)
Frequency (MHz)
Gain vs. Frequency
Temp.=+25°C
-25
-20
-15
-10
-5
0
920 930 940 950 960
Output Return Loss (dB)
Frequency (MHz)
Return Loss vs. Frequency
Temp.=+25°C
S22
S11
29
30
31
32
33
34
35
920 930 940 950 960
P1dB (dBm)
Frequency (MHz)
P1dB vs. Frequency
+25C
7
8
8
9
9
920 930 940 950 960
Noise Figure (dB)
Frequency (MHz)
Noise Figure vs. Frequency
+25C
-60
-55
-50
-45
-40
-35
-30
19 21 23 25 27
ACLR (dBc)
Output Power (dBm)
ACLR vs. Pout vs Freq.
3GPP WCDMA, TM ±64DPCH, ±5MHz Offset, +25C
920 MHz
940 MHz
960 MHz
43
44
45
46
47
48
16 18 20 22 24 26
OIP3 (dBm)
Pout/tone (dBm)
OIP3 vs. Pout/Tone over Frequency
1 MHz spacing, 25C
920 MHz
940 MHz
960 MHz
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 10 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
1805 - 1880 MHz Application Circuit
C8
1.5 pF
L2
DNP
C1
1000pF
C17
4.7uF
0805
C7
10uF
6032
C9
1.3 pF
J1
RF
Input
R2
51
C11
100pF C10
22pF
C15
10pF
C6
3.3 pF
R3
15
R6
0R7
0
R8
DNP
VREF
Vcc=+5V
Vpd
R1
68 FB1
L4
0L3
82 nH L1
22nH
1008
U1
AH322
1
2
3
4
8
7
6
5
Vbias +
D3
SM05T1G
C3
100pF RF
Output
J2
C5
3 pF C2
DNP
DNP
R4
C14
1000 pF
C12
1.0 uF
0805
Typical Performance 1805 - 1880 MHz
Frequency
MHz
1805
1840
1880
Gain
dB
14.3
14.6
14.7
Input Return Loss
dB
17
19
15
Output Return Loss
dB
7.7
11.3
20
Output P1dB
dBm
+33
+33.1
+32.3
WCDMA Channel Power at -50 dBc ACLR [1]
dBm
+23.2
+24.1
+22.5
Output IP3(21 dBm/tone, 1 MHz spacing) [2]
dBm
+47.9
+49.5
+44.6
Noise Figure
dB
4.9
4.9
4.9
Supply Voltage, Vcc
V
+5
Quiescent Collector Current, Icq
mA
500
Notes:
1. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset, PAR=10.2dB @ 0.01% Prob.
2. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing.
Notes:
1. Vref can be used as device power down voltage (low = RF off) by
swapping R7 with R8.
2. The edge of C5 is placed at 315 mils from the edge of AH322 RFout pin pad
(31 º @ 1840 MHz).
3. C8 is placed against the edge of C9.
4. The multilayer inductor L3 (82nH) is critical for linearity performance.
5. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
6. 0 Ω jumpers may be replaced with copper traces in the target application
layout.
7. DNP implies Do Not Place.
8. FB1 (Ferrite Bead) prevents bias line resonances by isolating C15 and
C1.Steward MI0603K300R-10.
C9 C3
J5
J3
J1 J2
C15
R2
C10
C11
C5
C1
C12
J4
L1
C7
C8 R3
R1L3
L4 R6
R7
FB1
C17
D3
C6
U1
C14
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 11 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
Typical Performance Plots 1805 - 1880 MHz
10
11
12
13
14
15
1800 1820 1840 1860 1880 1900
S21 (dB)
Frequency (MHz)
S21 vs. Frequency
+25ºC
-25
-20
-15
-10
-5
0
1800 1820 1840 1860 1880 1900
Return Loss (dB)
Frequency (MHz)
Return Loss vs. Frequency
+25ºC
S22
S11
28
29
30
31
32
33
34
1800 1820 1840 1860 1880 1900
P1dB (dBm)
Frequency (MHz)
P1dB vs. Frequency
+25ºC
35
40
45
50
55
19 20 21 22 23 24 25 26
OIP3 (dBm)
Output Power / Tone (dBm)
OIP3 vs Pout/Tone vs. Freq
1 MHz spacing, 25ºC
1805 MHz
1840 MHz
1880 MHz
500
520
540
560
580
600
20 21 22 23 24 25
Icc (mA)
Pout (dBm)
Icc vs. Pout
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, +25ºC
-60
-55
-50
-45
-40
20 21 22 23 24 25
ACLR (dBc)
Output Power (dBm)
ACLR vs. Pout vs. Freq
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, +25ºC
1805 MHz
1840 MHz
1880 MHz
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 12 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
1930 - 1990 MHz Application Circuit (AH322-S8PCB1960)
C9 C3
J5
J3
J1 J2
C15
R2
C11
C5
J4
L1
C8 R3
R1L3
L4 R6
R7
FB1
D3
C6
U1
C10
C1
C7
C8
1.2 pF
L2
DNP
C1
4.7 uF
C7
10uF
6032
C9
1.8 pF
J1
RF
Input
R2
51
C11
22 pF C10
22pF
C15
10pF
C6
4.7 pF
R3
15
R6
0R7
0
VREF
Vcc=+5V
Vpd
R1
68 FB1
L4
0L3
82 nH L1
22nH
1008
U1
AH322
1
2
3
4
8
7
6
5
Vbias +
D3
SM05T1G
C3
22 pF RF
Output
J2
C5
2.7 pF
C12
1.0 uF
Typical Performance 1930 - 1990 MHz
Frequency
MHz
1930
1960
1990
Gain
dB
14.0
14.1
14.1
Input Return Loss
dB
14.5
12.6
11.0
Output Return Loss
dB
8.5
10.9
13.6
Output P1dB
dBm
+33.2
+33.2
+32.9
WCDMA Channel Power at -50 dBc ACLR [1]
dBm
+23
+23.7
+23.3
Output IP3(21 dBm/tone, 1 MHz spacing) [2]
dBm
+49.0
+48.5
+46.4
Noise Figure
dB
4.6
4.6
4.6
Supply Voltage, Vcc
V
+5
Quiescent Collector Current, Icq
mA
500
Notes:
1. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset, PAR=10.2dB @ 0.01% Prob.
2. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing.
Notes:
1. Vref can be used as device power down voltage (low = RF off) by
swapping R7 with R8.
2. The edge of C9 is placed at 100 mils from the edge of AH322 RFin pin pad
(10.5 º @ 1960 MHz).
3. The edge of C8 is placed at 40 mils from the edge of AH322 RFin pin pad
(4.2 º @ 1960 MHz).
4. The edge of C6 is placed at 110 mils from the edge of AH322 RFout pin pad
(11.5 º @ 1960 MHz).
5. The edge of C5 is placed at 210 mils from the edge of AH322 RFout pin pad
(11 º @ 1960 MHz).
6. The multilayer inductor L3 (82nH) is critical for linearity performance.
7. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
8. 0 Ω jumpers may be replaced with copper traces in the target application
layout.
9. DNP implies Do Not Place.
10. FB1 (Ferrite Bead) prevents bias line resonances by isolating C15 and
C1.Steward MI0603K300R-10.
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 13 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
Typical Performance Plots 1930 - 1990 MHz
10
11
12
13
14
15
1930 1940 1950 1960 1970 1980 1990
S21 (dB)
Frequency (MHz)
S21 vs. Frequency
+25C
-20
-16
-12
-8
-4
0
1930 1940 1950 1960 1970 1980 1990
Magnitude (dB)
Frequency (MHz)
Return Loss vs. Frequency
+25C
S22
S11
29
30
31
32
33
34
1930 1940 1950 1960 1970 1980 1990
P1dB (dBm)
Frequency (MHz)
P1dB vs. Frequency
+25ºC
30
35
40
45
50
55
16 18 20 22 24 26
OIP3 (dBm)
Pout / Tone (dBm)
OIP3 vs. Pout/Tone vs. Freq
1 MHz spacing, +25C
1930 MHz
1960 MHz
1990 MHz
-60
-55
-50
-45
-40
20 21 22 23 24 25 26
ACLR (dBc)
Channel Output Power (dBm)
ACLR vs. Pout vs. Freq
3GPP WCDMA, TM1+64DPCH, ±5MHz Offset, +25C
1990 MHz
1930 MHz
1960 MHz
30
35
40
45
50
55
1930 1940 1950 1960 1970 1980 1990
OIP3 (dBm)
Frequency (MHz)
OIP3 vs. Frequency
1 MHz, +25C
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 14 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
2110 - 2170 MHz Application Circuit (AH322-S8PCB2140)
C8
0.8 pF
L2
DNP
C1
1000pF
0805
C7
10uF
6032
C9
2.4 pF
J1
RF
Input
R2
51
C11
100pF C10
22pF
C15
10pF
C6
3.6 pF
R3
15
R6
0R7
0
VREF
Vcc=+5V
Vpd
R1
68 FB1
L4
0L3
82 nH L1
18nH
1008
U1
AH322
1
2
3
4
8
7
6
5
Vbias +
D3
SM05T1G
C3
22pF RF
Output
J2
C5
2.4 pF C2
DNP
C14
1000 pF
C12
1.0 uF
Typical Performance 2110 - 2170 MHz
Frequency
MHz
2110
2140
2170
Gain
dB
13.6
13.7
13.7
Input Return Loss
dB
11
10.2
10
Output Return Loss
dB
11
14
17.5
Output P1dB
dBm
+32.9
+32.6
+32.5
WCDMA Channel Power at -50 dBc ACLR [1]
dBm
+23.8
+23.4
+23
Output IP3(24 dBm/tone, 1 MHz spacing) [2]
dBm
+47.9
+50
+49.8
Noise Figure
dB
4.7
4.7
4.7
Supply Voltage, Vcc
V
+5
Quiescent Collector Current, Icq
mA
500
Notes:
1. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset PAR = 10.2 dB @ 0.01% Prob.
2. OIP3 is measured at 24 dBm / tone output power with 1 MHz spacing.
Notes:
1. Vref can be used as device power down voltage (low = RF off) by
swapping R7 with R8.
2. The edge of C5 is placed at 195 mils from the edge of AH322 RFout pin pad
(22 º @ 2140 MHz).
3. The edge of C8 is placed at 0.5 mils from the edge of AH322 RFin pin pad
(0 º @ 2140 MHz).
4. The edge of C9 is placed at 85 mils from the edge of AH322 RFin pin pad
(9.9 º @ 2140 MHz).
5. The multilayer inductor L3 (82 nH) is critical for linearity performance.
6. Zero ohm jumpers may be replaced with copper traces in the target
application layout.
7. DNP means Do Not Place.
8. FB1 (Ferrite Bead) prevents bias line resonances by isolating C15 and
C1.Steward MI0603K300R-10.
C9 C3
J5
J3
J1 J2
C15
R2
C11
C5
C12
J4
L1
C8 R3
R1L3
L4 R6
R7
FB1
D3
C6
U1
C10
C14
C1
C7
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 15 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
Typical Performance Plots 2110 - 2170 MHz
10
11
12
13
14
15
2110 2120 2130 2140 2150 2160 2170
Gain (dB)
Frequency (MHz)
Gain vs. Frequency
25⁰C
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Magnitude (dB)
Frequency (MHz)
Return Loss vs. Frequency
25⁰C
S11
S22
29
30
31
32
33
34
2110 2120 2130 2140 2150 2160 2170
P1dB (dBm)
Frequency (MHz)
P1dB vs. Frequency
25⁰C
520
540
560
580
600
620
20 21 22 23 24 25 26
Icc (mA)
Pout (dBm)
Icc vs. Pout
2140 MHz,3GPP WCDMA,TM1+64DPCH,5MHz Offset,25⁰C
-60
-55
-50
-45
-40
21 22 23 24 25 26
ACLR (dBc)
Pout (dBm)
ACLR vs. Pout over Frequency
3GPP WCDMA, TM1+64DPCH, 5MHz Offset, 25⁰C
2110 MHz
2170 MHz
2140 MHz
35
40
45
50
55
60
20 21 22 23 24 25 26
OIP3 (dBm)
Pout/tone (dBm)
OIP3 vs. Pout/tone over Frequency
1 MHz Spacing, 25⁰C
2110 MHz
2170 MHz
2140 MHz
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 16 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
2570 - 2740 MHz Application Circuit
C8
0.8 pF
L2
DNP
C1
1000pF
C17
4.7uF
0805
C7
10uF
6032
C9
1.8 pF
J1
RF
Input
R2
51
C11
100pF C10
22pF
C15
10pF
C6
2.0 pF
R3
15
R6
0R7
0
R8
DNP
VREF
Vcc=+5V
Vpd
R1
68 FB1
L4
0L3
82 nH L1
12nH
1008
U1
AH322
1
2
3
4
8
7
6
5
Vbias +
D3
SM05T1G
C3
100pF RF
Output
J2
C5
1.8 pF C2
DNP
DNP
R4
C14
1000 pF
C12
1.0 uF
0805
Typical Performance 2570 - 2740 MHz
Frequency
MHz
2570
2655
2740
Gain
dB
11.8
12.6
11.8
Input Return Loss
dB
26.7
20
10.2
Output Return Loss
dB
6
9.3
7
Output P1dB
dBm
+31.7
+31.9
+30.4
Channel Power @ 2.5% EVM [1]
dBm
+23.9
+24.5
+23
WCDMA Channel Power at -50 dBc ACLR [2]
dBm
+21.6
+22.6
+21
Output IP3(21 dBm/tone, 1 MHz spacing) [3]
dBm
+44.4
+45.1
+43.3
Noise Figure
dB
5.9
6.2
6.7
Supply Voltage, Vcc
V
+5
Quiescent Collector Current, Icq
mA
500
Notes:
1. EVM Test set-up: 802.16 – 2004 OFDMA, 64QAM – ½, 1024 FFT, 20 symbols, 30 subchannels.
2. ACLR Test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset PAR = 10.2 dB @ 0.01% Prob.
3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing.
Notes:
1. Vref can be used as device power down voltage (low = RF off) by
swapping R7 with R8.
2. The edge of C5 is placed at 160 mils from the edge of AH322 RFout pin pad
(22.6 º @ 2655 MHz).
3. The edge of C8 is placed at 0.5 mils from the edge of AH322 RFout pin pad
(0 º @ 2655 MHz).
4. The multilayer inductor L3 (82 nH) is critical for linearity performance.
5. Zero ohm jumpers may be replaced with copper traces in the target
application layout.
6. DNP means Do Not Place.
7. FB1 (Ferrite Bead) prevents bias line resonances by isolating C15 and
C1.Steward MI0603K300R-10.
R5
C3
J5
J3
J1 J2
C15
R2
C11
C5
C12
J4
L1
C9
C8 R3
R1L3
L4 R6
R7
FB1
C17
D3
C6
U1
C10
C7
C1
C14
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 17 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
Typical Performance Plots 2570 - 2740 MHz
8
9
10
11
12
13
2570 2600 2630 2660 2690 2720 2750
Gain (dB)
Frequency (MHz)
Small Signal Performance
+25ºC
-30
-25
-20
-15
-10
-5
0
2570 2600 2630 2660 2690 2720 2750
Return Loss (dB)
Frequency (MHz)
Return Loss vs. Frequency
+25ºC
S22
S11
0
1
2
3
4
5
6
17 18 19 20 21 22 23 24 25
EVM (%)
Pout (dBm)
EVM vs Pout vs. Freq
OFDM, QAM-64-1/2, 54Mb/s
2740 MHz
2655 MHz
2570 MHz
-60
-55
-50
-45
-40
-35
-30
18 19 20 21 22 23 24 25
ACLR (dBc)
Output Channel Power (dBm)
ACLR vs. Pout vs. Freq
3GPP WCDMA, TM1+64DPCH, +5MHz offset, +25C
2740 MHz
2655 MHz
2570 MHz
28
29
30
31
32
33
34
2570 2600 2630 2660 2690 2720 2750
P1dB (dBm)
Frequency (MHz)
P1dB vs. Frequency
+25ºC
30
34
38
42
46
50
18 20 22 24 26
OIP3 (dBm)
Pout/tone (dBm)
OIP3 vs Pout/Tone vs. Freq
1 MHz spacing, 25C
2570 MHz
2655 MHz
2740 MHz
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 18 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
Pin Description
1
2
3
4
8
7
6
5
Vbias
N/C
RF_In
N/C
Iref
RF_Out
RF_Out
N/C
Backside Paddle - RF/DC GND
Pin 1 Reference Mark
Pin
Symbol
Description
1
Vbias
Voltage supply for active bias. Connect to same supply voltage as Vcc.
2, 4, 5
N/C
No internal connection. This pin can be grounded or N/C on PCB.
3
RF_in
RF Input. Requires matching for operation.
6
RF_out
RF Output and DC supply voltage.
7
RF_out
See pin 6.
8
Iref
Reference current into internal active bias current mirror. Current into Iref sets device
quiescent current. Also, can be used as on/off control.
Backside
Paddle
RF/DC GND
Use recommended via pattern shown on page 20 and ensure good solder attach for
optimum thermal and electrical performance.
Application Board Information
PC Board Layout
Top RF layer is .014” Getek, єr = 4.0, 4 total layers
(0.062” thick) for mechanical rigidity. Metal layers are 1-
oz copper. Microstrip line details: width = .030”, spacing
= .026”.
The silk screen markers „A‟, „B‟, „C‟, etc. and „1‟, „2‟, „3‟,
etc. are used as placemarkers for the input and output
tuning shunt capacitors – C8, C5 and C2. The markers
and vias are spaced in .050” increments.
The pad pattern shown has been developed and tested for
optimized assembly at TriQuint Semiconductor. The PCB
land pattern has been developed to accommodate lead and
package tolerances. Since surface mount processes vary
from company to company, careful process development
is recommended.
For further technical information, Refer to
www.TriQuint.com
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 19 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
Mechanical Information
Package Information and Dimensions
This package is lead-free/RoHS-compliant. The plating
material on the leads is NiPdAu. It is compatible with
both lead-free (maximum 260 °C reflow temperature)
and lead (maximum 245 °C reflow temperature)
soldering processes.
The AH225 will be marked with an “AH322G”
designator with a lot code marked below the part
designator. The “Y” represents the last digit of the year
the part was manufactured, the “XXXX” is an auto-
generated number, and “Z” refers to a wafer number in
a lot batch.
Mounting Configuration
Notes:
1. A heat sink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device
can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”) or equivalent.
3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the board to a heat sink. Ensure that the ground / thermal via region contact the heat
sink.
5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heat sink.
6. RF Trace width depends upon the PC board material and construction.
7. Use 1 oz. Copper minimum.
8. All dimensions are in millimeters (inches). Angles are in degrees.
AH322
2W High Linearity InGaP HBT Amplifier
Data Sheet: Rev B 05/14/2012
- 20 of 20 -
Disclaimer: Subject to change without notice
© 2012 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global
Network®
Product Compliance Information
ESD Information
ESD Rating: Class 1C
Value: Passes 1000 V to < 2000V.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22A114
ESD Rating: Class IV
Value: Passes 1000 V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22C101
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°.
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
MSL Rating
The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC
standard IPC/JEDEC J-STD-020.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com Tel: +1.503.615.9000
Email: info-sales@tqs.com Fax: +1.503.615.8902
For technical questions and application information:
Email: sjcapplications.engineering@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
