FSB50550U - FAIRCHILD SEMICONDUCTOR

FSB50550U Rev. A

FSB50550U Smart Power Module (SPM®)

February 2009

FSB50550U

Smart Power Module (SPM®)

Features

•500V R

DS(on)=1.4Ω(max) 3-phase FRFET inverter including

high voltage integrated circuit (HVIC)

• 3 divided negative dc-link terminals for inver ter current sens-

ing applications

• HVIC for gate driving and undervoltage protection

• 3/5V CMOS/TTL compatible, active-high interface

• Optimized for low electromagnetic interference

• Isolation voltage rating of 1500Vrms for 1min.

General Description

FSB50550U is a tiny smart power module (SPM®) based on

FRFET technology as a compact inverter solution for small

power motor drive applications such as fan motors and water

suppliers. It is composed of 6 fast-recovery M OSFET (FRFET),

and 3 half-bridge HVICs for FRFET gate driving. FSB50550U

provides low electromagnetic interference (EMI) char acteristics

with optimized switching speed. Moreover, since it employs

FRFET as a power switch, it has much better ruggedness and

larger safe operation area (SOA) than that of an IGBT-based

power module or one-chip solution. The package is optimized

for the thermal performance and compactness for the use in the

built-in motor application and any other application where the

assembly space is concerned. F SB50550U is the most solution

for the compact inverter providing the energy efficiency,

compactness, and low electromagnetic interference.

Absolute Maximum Ratings

Symbol Parameter Conditions Rating Units

VPN DC Link Input Voltage,

Drain-source Voltage of each FRFET 500 V

ID25 Each FRFET Drain Current, Continuous TC = 25°C 2.0 A

ID80 Each FRFET Drain Current, Continuous TC = 80°C 1.5 A

IDP Each FRFET Drain Current, Peak TC = 25°C, PW < 100μs 5 A

PDMaximum Power Dissipation TC = 25°C, Each FRFET 14.5 W

VCC Control Supply Voltage Applied between VCC and COM 20 V

VBS High-side Bias Voltage Applied between VB(U)-U, VB(V)-V, VB(W)-W 20 V

VIN Input Signal Voltage Applied between IN and COM -0.3 ~ VCC+0.3 V

TJOperating Junction Temperature -40 ~ 150 °C

TSTG Storage Temperature -50 ~ 150 °C

RθJC Junction to Case Therma l Resistance Each FRFET under inverter operating con-

dition (Note 1) 8.6 °C/W

VISO Isolation Voltage 60Hz, Sinusoidal, 1 minute, Connection

pins to heatsink 1500 Vrms

2www.fairchildsemi.com

FSB50550U Rev. A

FSB50550U Smart Power Module (SPM®)

Pin Descriptions

Note:

Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM®. External connections should be made as indicated in Fig-

ure 2 and 5. Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)

Pin Number Pin Name Pin Description

1COM IC Common Supply Ground

2 VB(U) Bias Voltage for U Phase High Side FRFET Driving

3 VCC(U) Bias Voltage for U Phase IC and Low Side FRFET Driving

4IN(UH) Signal Input for U Phase High-side

5IN(UL) Signal Inp ut for U Phase Low-side

6 VS(U) Bias Voltage Ground for U Phase High Side FRFET Driving

7 VB(V) Bias Voltage for V Phase High Side FRFET Driving

8 VCC(V) Bias Voltage for V Phase IC and Low Side FRFET Driving

9IN(VH) Signal Inp ut for V Phase High-side

10 IN(VL) Signal Input for V Phase Low-side

11 VS(V) Bias Voltage Ground for V Phase High Side FRFET Driving

12 VB(W) Bias Voltage for W Phase High Side FRFET Driving

13 VCC(W) Bias Voltage for W Phase IC and Low Side FRFET Driving

14 IN(WH) Signal Input for W Phase High-side

15 IN(WL) Signal Input for W Phase Low-side

16 VS(W) Bias Voltage Ground for W Phase High Side FRFET Driving

17 PPositive DC–Link Input

18 UOutput for U Phase

19 NUNegative DC–Link Input for U Phase

20 NVNegative DC–Link Input for V Phase

21 VOutput for V Phase

22 NWNegative DC–Link Input for W Phase

23 WOutput for W Phase

COM

VCC

LIN

HIN

COM

VCC

LIN

HIN

COM

VCC

LIN

HIN

(1) COM

(2) VB(U)

(3) VCC(U)

(4) IN(UH)

(5) IN(UL)

(6) VS(U)

(7) VB(V)

(8) VCC(V)

(9) IN(VH)

(10) IN(VL)

(11) VS(V)

(12) VB(W)

(13) VCC(W)

(14) IN(WH)

(15) IN(WL)

(16) VS(W)

(17) P

(18) U

(19) NU

(20) NV

(21) V

(22) NW

(23) W

3www.fairchildsemi.com

FSB50550U Rev. A

FSB50550U Smart Power Module (SPM®)

Electrical Characteristics (TJ = 25°C, VCC=VBS=15V Unless Otherwise Specified)

Inverter Part (Each FRFET Unless Otherwise Specified)

Control Part (Each HVIC Unless Otherwise Specified)

Note:

1. For the measurement point of case temperatur e TC, please refer to Figure 3 in page 4.

2. BVDSS is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM®. VPN should be sufficiently less than this value considering the

effect of the stray inductance so that VDS should not exceed BVDSS in any case.

3. tON and tOFF include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the

field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 4 for the switching time definition with the switching test circuit of Figure 5.

4. The peak c ur rent and voltag e o f each FRFET during the sw itchi n g o per a ti on s hou l d b e incl u ded i n t he safe operating area ( SO A). Plea se se e Fig ure 5 for the RBSOA test cir-

cuit that is same as the switching test circuit.

Package Marking & Ordering Information

Symbol Parameter Conditions Min Typ Max Units

BVDSS Drain-Source Breakdown

Voltage VIN= 0V, ID = 250μA (Note 2) 500 - - V

ΔBVDSS/

ΔTJ

Breakdown Voltage Tem-

perature Coefficient ID = 250μA, Referenced to 25°C -0.53 - V

IDSS Zero Gate Voltage

Drain Current VIN= 0V, VDS = 500V - - 250 μA

RDS(on) Static Drain-Source

On-Resistance VCC = VBS = 15V, VIN = 5V, ID = 1.2A -1.0 1.4 Ω

VSD Drain-Source Diode

Forward Voltage VCC = VBS = 15V, VIN = 0V, ID = -1.2A - - 1.2 V

tON

Switching Times

VPN = 300V, VCC = VBS = 15 V, ID = 1.2A

VIN = 0V ↔ 5V

Inductive load L=3mH

High- and low-side FRFET switching

(Note 3)

-600 -ns

tOFF -500 -ns

trr -100 -ns

EON -60 -μJ

EOFF -10 -μJ

RBSOA Reverse-bias Safe Oper-

ating Area

VPN = 400V, VCC = VBS = 15V, ID = IDP, VDS=BVDSS,

TJ = 150°C

High- and low-side FRFET switching (Note 4) Full Square

Symbol Parameter Conditions Min Typ Max Units

IQCC Quiescent VCC Current VCC=15V, VIN=0V Applied between VCC and COM - - 160 μA

IQBS Quiescent VBS Current VBS=15V, VIN=0V Applied between VB(U)-U,

VB(V)-V, VB(W)-W - - 100 μA

UVCCD Low-side Undervoltage

Protection (Figure 6) VCC Undervoltage Protection Detection Level 7.4 8.0 9.4 V

UVCCR VCC Undervoltage Protection Reset Level 8.0 8.9 9.8 V

UVBSD High-side Undervoltage

Protection (Figure 7) VBS Undervoltage Protection Detection Level 7.4 8.0 9.4 V

UVBSR VBS Undervoltage Protection Reset Level 8.0 8.9 9.8 V

VIH ON Threshold Voltage Logic High Level Applied between IN and COM 3.0 - - V

VIL OFF Threshold Voltage Logic Low Level - - 0.8 V

IIH Input Bias Current VIN = 5V Applied between IN and COM -10 20 μA

IIL VIN = 0V - - 2 μA

Device Marking Device Package Reel Size Packing Type Quantity

FSB50550U FSB50550U SPM23-AD _ _ 15

4www.fairchildsemi.com

FSB50550U Rev. A

FSB50550U Smart Power Module (SPM®)

Recommended Operating Conditions

Note:

(1) It is recommended the bootstrap diode D1 to have soft and fast recovery characteristics with 600-V rating

(2) Parameters for bootsrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of para meters is shown above.

(3) RC coupling (R5 and C5) at each input (indicat ed as dotted lines) may be used to prevent improper input sig nal due to surge nois e. Signal input of SPM®is compatible with

standard CMOS or LSTTL outptus.

(4) Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge voltage. Bypass capacitors such as C1, C2

and C3 should have good high-frequency characteristics to absorb high-frequency ripple current.

Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters

Note:

Attach the thermocouple on top of the heatsink-side of SPM® (between SPM® and heatsink if applied) to get the correct temperature measurement.

Figure 3. Case Temperature Measurement

Symbol Parameter Conditions Value Units

Min. Typ. Max.

VPN Supply Voltage Applied between P and N -300 400 V

VCC Control Supply Voltage Applied between VCC and COM 13.5 15 16.5 V

VBS High-side Bias Voltage Applied between VB and output(U, V, W) 13.5 15 16.5 V

VIN(ON) Input ON Threshold Voltage Applied between IN and COM 3.0 -VCC V

VIN(OFF) Input OFF Threshold Voltage 0 - 0.6 V

tdead Blanking Time for Preventing

Arm-short VCC=VBS=13.5 ~ 16.5V, TJ ≤ 150°C 1.0 - - μs

fPWM PWM Switching Frequency TJ ≤ 150°C -15 -kHz

COM

VCC

LIN

HIN

NR3

Inverter

Output

R1D1

Micom

15-V Line

10μFOne-Leg Diagram of SPM

These values depend on PWM

control algorithm

* Example of bootstrap paramters:

C1 = C 2 = 1μF ceramic capacitor,

R1 = 56Ω, R2 = 20Ω

HIN LIN

VDC

0 0

0 1

1 0

1 1

Open Open

Output

VDC

Forbidden

Note

Both FRFET Off

Low-side FRFET On

High-side FRFET On

Shoot-through

Same a s (0, 0 )

3.80

14.50

MOSFET Case Temperature (Tc)

Detectin

Point

3.80

14.50

MOSFET Case Temperature (Tc)

Detectin

Point

5www.fairchildsemi.com

FSB50550U Rev. A

FSB50550U Smart Power Module (SPM®)

Figure 4. Switching Time Definition

Figure 5. Switching and RBSOA(Single-pulse) Test Circuit (Low-side)

Figure 6. Undervoltage Prot ection (Low-side)

Figure 7. Undervoltage Protection (High-side)

tON trr

Irr

100% of ID120% of ID

(a) Turn -on

tOFF

(b) Tu rn -o ff

VDS

VIN VIN

10% of ID

COM

VCC

LIN

HIN

One-leg Diagram of SPM

VCC RBS

REH

CBS

VDS

UVCCD

UVCCR

Input Signal

UV Protection

Status

Low-side Supply, VCC

MOSFET Current

RESET DETECTION RESET

UVBSD

UVBSR

Input Signal

UV Protection

Status

High-si de Supply, VBS

MOSFET Current

RESET DETECTION RESET

6www.fairchildsemi.com

FSB50550U Rev. A

FSB50550U Smart Power Module (SPM®)

Figure 8. Example of Applicat ion Circuit

COM

VCC

LIN

HIN

COM

VCC

LIN

HIN

COM

VCC

LIN

HIN

(1) COM

(2) VB(U)

(3) VCC(U)

(4) IN(UH)

(5) IN(UL)

(6) VS(U)

(7) VB(V)

(8) VCC(V)

(9) IN(VH)

(10) IN(VL)

(11) VS(V)

(12) VB(W)

(13) VCC(W)

(14) IN(WH)

(15) IN(WL)

(16) VS(W)

(17) P

(18) U

(19) NU

(20) NV

(21) V

(22) NW

(23) W

Micom

15-V

Supply

C3VDC

For 3-phase current sensing and protection

7www.fairchildsemi.com

FSB50550U Rev. A

FSB50550U Smart Power Module (SPM®)

Detailed Package Outline Drawings

#1 #16

#17 #23#19

0.60±0.05

#17,18,21,22,23 LEAD

Max 1.00

(0.30)

0.50±0.05

#19, 20 LEAD

Max 1.00

(0.30)

7.00 7.00

0.50

±0.05

(R0.40)

(1.00)

(1.80)

3.10±0.20

6.05±0.20

2.55~3.35

14.55±0.30

6°

2°

16-0.50±0.05

16-Max 1.00

13-(0.30)

12.00±0.20

29.00±0.20

(1.165) 15*1.778=26.67±0.30

(1.80)

(1.30)

(2.275) 4x3.90=15.60±0.30

#1 #16

#17 #23

2x3.90=7.80±0.30

12.23 13.13

13.34 13.34

1.95±0.30

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

AccuPower™

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

EfficentMax™

EZSW ITCH™*

™*

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FETBench™

FlashWriter®*

FPS™

F-PFS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MillerDrive™

MotionM ax™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP SPM™

Power-SPM™

PowerTrench®

PowerXS™

Programmable Active Droop™

QFET®

QS™

Quiet Series™

RapidConfigure™

™

Saving our world, 1mW/W/kW at a time™

SmartMax™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Sync-Lock™ ®*

The Power Franchise®

TinyBoost™

TinyBuck™

TinyCalc™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

TriFault Detect™

TRUECURRENT™*

μSerDes™

UHC®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FAIRCHI LD SEM ICONDUCTOR RESERVES THE RIG HT TO MAKE CHANGES WITHOUT F URTHER NOTICE TO ANY PRODUCTS HEREI N TO IMPRO VE

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CIRCUI T DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LI CENSE UNDER ITS PATENT RIGHTS, NOR THE RI GHTS OF OTHERS. THESE

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WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHI LD’S PRODUCTS ARE NOT AUTHORIZED F OR USE AS CRITI CAL COM PONENTS IN LI FE SUPPORT DEVICES OR SY STEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAI RCHI LD SEM ICONDUCTOR CORPORATIO N.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical im plant i nto the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its

safety or effectiveness.

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under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.

Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in

any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes

at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only. Rev. I41