DMC4050SSD
Document number: DS33310 Rev. 3 - 2
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DMC4050SSD
40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V(BR)DSS
RDS(ON) Max
ID Max
TA = +25°C
(Notes 6 & 8)
Q1
40V
45mΩ @ VGS= 10V
5.5A
60mΩ @ VGS= 4.5V
4.2A
Q2
-40V
45mΩ @ VGS= -10V
-5.8A
60mΩ @ VGS= -4.5V
-4.2A
Description
This MOSFET is designed to ensure that RDS(ON) of N and P channel
FET are matched to minimize losses in both arms of the bridge. The
DMC4040SSD is optimized for use in 3-phase brushless DC motor
circuits (BLDC), and CCFL backlighting.
Applications
3-Phase BLDC Motor
CCFL Backlighting
Features and Benefits
Matched N & P RDS(ON) – Minimizes Power Losses
Fast Switching – Minimizes Switching Losses
Dual Device – Reduces PCB Area
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
Ordering Information (Note 4)
Product
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
DMC4050SSD-13
C4050SD
13
12
2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
SO-8
Top View
Top View
Equivalent Circuit
D1S1
G1
S2
G2
D1
D2
D2
D1
S1
G1
D2
S2
G2
DMC4050SSD
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DMC4050SSD
Marking Information
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
N-Channel - Q1
P-Channel - Q2
Units
Drain-Source Voltage
VDSS
40
-40
V
Gate-Source Voltage
VGSS
20
20
Continuous Drain Current
VGS = 10V
(Notes 6 & 8)
ID
5.8
-5.8
A
TA = +70°C (Notes 6 & 8)
4.38
-4.52
(Notes 5 & 8)
4.2
-4.2
(Notes 5 & 9)
5.3
-5.3
Pulsed Drain Current
VGS = 10V
(Notes 7 & 8)
IDM
24.1
-24.9
Continuous Source Current (Body Diode)
(Notes 6 & 8)
IS
2.5
-2.5
Pulsed Source Current (Body Diode)
(Notes 7 & 8)
ISM
24.1
-24.9
Thermal Characteristics
Characteristic
Symbol
N-Channel - Q1
P-Channel - Q2
Unit
Power Dissipation
Linear Derating Factor
(Notes 5 & 8)
PD
1.25
10
W
mW/°C
(Notes 5 & 9)
1.8
14.3
(Notes 6 & 8)
2.14
17.2
Thermal Resistance, Junction to Ambient
(Notes 5 & 8)
RθJA
100
°C/W
(Notes 5 & 9)
70
(Notes 6 & 8)
58
Thermal Resistance, Junction to Lead
(Notes 5 & 10)
RθJL
51
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t 10 sec.
7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs.
8. For a dual device with one active die.
9. For a device with two active die running at equal power.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
C4050SD
YY WW
= Manufacturer’s Marking
C4050SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Year (ex: 10 = 2010)
WW = Week (01 - 53)
DMC4050SSD
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DMC4050SSD
Thermal Characteristics (Continued)
0.1 1 10
10m
100m
1
10
025 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
100µ 1m 10m 100m 110 100 1k
0
20
40
60
80
100
100µ 1m 10m 100m 110 100 1k
1
10
100
0.1 1 10
10m
100m
1
10
R(theta junction-to-ambient), RJA
One active die
100us
100ms
1s
RDS(ON)
Limited
1ms
N-channel Safe Operating Area
Single Pulse
Tamb= 25°C
One active die
DC
10ms
ID Drain Current (A)
VDS Drain-Source Voltage (V)
One active die
Two active die
Derating Curve
Max Power Dissipation (W)
Temperature (°C)
D=0.2
D=0.5
D=0.1
Transient Thermal Impedance
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
Single Pulse
Tamb= 25°C
One active die
Pulse Power Dissipation
Maximum Power (W)
Pulse Width (s)
Single Pulse
Tamb= 25°C
One active die
1s
DC
100us
1ms
10ms
100ms
RDS(ON)
Limited
P-channel Safe Operating Area
-VDS Drain-Source Voltage (V)
-ID Drain Current (A)
DMC4050SSD
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DMC4050SSD
Electrical Characteristics (Q1 N-Channel) (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 11)
Drain-Source Breakdown Voltage
BVDSS
40
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
1.0
µA
VDS = 40V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 11)
Gate Threshold Voltage
VGS(th)
0.8
1.3
1.8
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
—
20
33
45
60
mΩ
VGS = 10V, ID = 3A
VGS = 4.5V, ID = 3A
Forward Transfer Admittance
|Yfs|
—
12.6
—
S
VDS = 5V, ID = 3A
Diode Forward Voltage (Note 11)
VSD
—
0.7
1.0
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Ciss
—
1790.8
—
pF
VDS = 20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
—
160.6
—
pF
Reverse Transfer Capacitance
Crss
—
120.5
—
pF
Gate Resistance
Rg
—
1.03
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
—
37.56
—
nC
VGS = 10V, VDS = 20V,
ID = 3A
Gate-Source Charge
Qgs
—
7.8
—
nC
Gate-Drain Charge
Qgd
—
6.6
—
nC
Turn-On Delay Time
tD(on)
—
8.08
—
nS
VGS = 10V, VDS = 20V,
ID = 3A
Turn-On Rise Time
tr
—
15.14
—
nS
Turn-Off Delay Time
tD(off)
—
24.29
—
nS
Turn-Off Fall Time
tf
—
5.27
—
nS
Electrical Characteristics (Q2 P-Channel) (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 11)
Drain-Source Breakdown Voltage
BVDSS
-40
—
—
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
-1.0
μA
VDS = -40V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 11)
Gate Threshold Voltage
VGS(th)
-0.8
-1.3
-1.8
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
—
28
30
45
60
mΩ
VGS = -10V, ID = -3A
VGS = -4.5V, ID = -3A
Forward Transfer Admittance
|Yfs|
—
16.6
—
S
VDS = -5V, ID = -3A
Diode Forward Voltage (Note 11)
VSD
—
-0.7
-1.0
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Ciss
—
1643.17
—
pF
VDS = -20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
—
179.13
—
pF
Reverse Transfer Capacitance
Crss
—
127.82
—
pF
Gate Resistance
Rg
—
6.43
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
—
33.66
—
nC
VGS = -10V, VDS = -20V,
ID = -3A
Gate-Source Charge
Qgs
—
5.54
—
nC
Gate-Drain Charge
Qgd
—
7.30
—
nC
Turn-On Delay Time
tD(on)
—
6.85
—
nS
VGS = -10V, VDS = -20V,
ID = -3A
Turn-On Rise Time
tr
—
14.72
—
nS
Turn-Off Delay Time
tD(off)
—
53.65
—
nS
Turn-Off Fall Time
tf
—
30.86
—
nS
Notes: 11. Short duration pulse test used to minimize self-heating effect.
12. Guaranteed by design. Not subject to production testing.
DMC4050SSD
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DMC4050SSD
Typical Characteristics (Q1 N-Channel)
0
5
10
15
20
25
30
0 0.5 1 1.5 2
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
D
V = 3.5V
GS
V = 2.5V
GS V = 3.0V
GS
V = 4.0V
GS
V = 4.5V
GS
V = 8.0V
GS
0
5
10
15
20
25
30
0 1 2 3 4 5
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I , DRAIN CURRENT (A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0
0.01
0.02
0.03
0.04
0.05
0.06
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
GS
V = 10V
GS
0
0.01
0.02
0.03
0.04
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 10V
GS
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = 10V
I = 20A
GS
D
V = 4.5V
I = 10A
GS
D
0
0.01
0.02
0.03
0.04
0.05
0.06
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
V = 10V
I = 20A
GS
D
V = 4.5V
I = 10A
GS
D
DMC4050SSD
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DMC4050SSD
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0
2
4
6
8
10
12
14
16
18
20
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I , SOURCE CURRENT (A)
S
T = 25°C
A
10
100
1,000
10,000
0 5 10 15 20 25 30
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C, CAPACITANCE (pF)
Ciss
Crss
Coss
f = 1MHz
0 5 10 15 20 25 30 35 40
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
10,000
I , LEAKAGE CURRENT (nA)
DSS
1,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 5 10 15 20 25 30 35 40
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
V , GATE-SOURCE VOLTAGE (V)
GS
V = 20V
I = 12A
DS
D
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DMC4050SSD
0.001 0.01 0.1 1 10 100 1,000
Fig. 12 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
12
R (t) = r(t) *
JA R
R = 94°C/W
JA
JA
P(pk) t1
t2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
DMC4050SSD
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DMC4050SSD
Typical Characteristics (Q2 P-Channel)
0 0.5 1 1.5 2
Fig. 13 Typical Output Characteristic
-V , DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
20
25
30
-I , DRAIN CURRENT (A)
D
0 1 2 3 4 5
Fig. 14 Typical Transfer Characteristic
-V , GATE-SOURCE VOLTAGE (V)
GS
0
5
10
15
20
25
30
-I , DRAIN CURRENT (A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -5V
DS
0 5 10 15 20 25 30
Fig. 15 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
0
0.01
0.02
0.03
0.04
0.05
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = -4.5V
GS
V = -10V
GS
0 5 10 15 20 25 30
-I , DRAIN CURRENT (A)
D
Fig. 16 Typical On-Resistance
vs. Drain Current and Temperature
0
0.01
0.02
0.03
0.04
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -10V
GS
Fig. 17 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = -10V
I = -20A
GS
D
V = -4.5V
I = -10A
GS
D
Fig. 18 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.01
0.02
0.03
0.04
0.05
0.06
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
V = -10V
I = -20A
GS
D
V = -4.5V
I = -10A
GS
D
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DMC4050SSD
0
0.5
1.0
1.5
2.0
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
-V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = -250µA
D
I = -1mA
D
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 20 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
0
2
4
6
8
10
12
14
16
18
20
-I , SOURCE CURRENT (A)
S
T = 25°C
A
0 5 10 15 20 25 30
Fig. 21 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
10,000
C, CAPACITANCE (pF)
Ciss
Crss
Coss
0 5 10 15 20 25 30 35 40
Fig. 22 Typical Leakage Current
vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
10,000
-I , LEAKAGE CURRENT (nA)
DSS
1,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 5 10 15 20 25 30 35 40
Fig. 23 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
-V , GATE-SOURCE VOLTAGE (V)
GS
V = -20V
I = -12A
DS
D
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DMC4050SSD
0.001 0.01 0.1 1 10 100 1,000
Fig. 24 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001
0.001
0.01
0.1
1
r(t), TRANSIENT THERMAL RESISTANCE
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
12
R (t) = r(t) *
JA R
R = 94°C/W
JA
JA
P(pk) t1
t2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
DMC4050SSD
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DMC4050SSD
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SO-8
Dim
Min
Max
A
-
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
-
0.35
L
0.62
0.82
0°
8°
All Dimensions in mm
Dimensions
Value (in mm)
X
0.60
Y
1.55
C1
5.4
C2
1.27
Gauge Plane
Seating Plane
Detail ‘A’
Detail ‘A’
E
E1
h
L
D
eb
A2
A1
A
45°7°~9°
A3
0.254
X
C1
C2
Y
SO-8
SO-8
DMC4050SSD
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DMC4050SSD
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
