SIEMENS BCR 1695 PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, 4 driver circuit * Two (galvanic) internal isolated Transistors in one package * Built in bias resistor (Ry=4.7kQ) 3 2 et] { VPS05604 Type Marking | Ordering Code |Pin Configuration Package BCR 169S |WSs [UPON INQUIRY|1=E1 |2=B1 |3=C2 |4=E2 |5=B2 [6=C1 |SOT-363 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VoEO 50 v Coliector-base voitage Veso 50 Emitter-base voltage VeBo 5 Input on Voltage Vion) 15 DC collector current lo 100 mA Total power dissipation, Tg = 116C Prot 250 mw Junction temperature 7 150 C Storage temperature Tstg ~ 65 ... + 150 Thermal Resistance Junction ambient =) Rings $275 K/W Junction - soldering point Rings = 140 t) Package mounted on peb 40mm x 40mm x 1.5mm / 0.5m? Cu Semiconductor Group 699 12.96SIEMENS BCR 169S Electrical Characteristics at 7,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. |max. DC Characteristics Collector-emitter breakdown voltage Vipryceo Vv Io = 100 YA, Ig =0 50 - - Collector-base breakdown voltage ViBR)CcBO ig = 10 pA, Ig =0 50 - - Base-emitter breakdown voltage ViBR)EBO Ie = 10 pA, Ig =O 5 - - Collector cutoff current Icpo nA Vop = 40 V, fe =0 - - 100 DC current gain Are - lo=5MA, Vog=5V 120 - 630 Collector-emitter saturation voltage 1) VcEsat Vv ic = 50 MA, fg = 2.5 mA - - 0.3 Input off voltage Vicott) Io = 100 PA, Veg =5V 0.4 - 0.8 Input on Voltage Viton) lo=2MA, Veg =0.3V 0.5 11 Input resistor Ay 3.2 4.7 6.2 kQ AC Characteristics Transition frequency fr MHz Io = 10 MA, Veg = 5 V, f= 100 MHz - 150 - Collector-base capacitance Cob pF Vop = 10 V, f= 1 MHz - 3 - 1) Pulse test: t< 300pis; D < 2% Semiconductor Group 700 12.96SIEMENS BCR 169S DC Current Gain hee = f (Ic) Voge = 5V (common emitter configuration) 103 10 10 10 10 mA e | input on Voltage Vion) = fic) Vog = 0.3V (common emitter configuration) 102 i 10" 10 107 Semiconductor Group Collector-Emitter Saturation Voltage Voesat = Alc), Pre = 20 102 10! 10 107 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 V 0.50 a Input off voltage Viofy = fic) Voce = 5V (common emitter configuration) 701 a Voeuat Vion 12.96SIEMENS BCR 1695 Total power dissipation Fi, = f(T": Ts) * Package mounted on epoxy Pros mw \r 200 N \ 0 Q 20 40 60 80 100 120 C 156 e 7, T.; Permissible Pulse Load Finys = Kf) Permissible Pulse Load Piotmax / Ptotoc = {bp) 103, PTs Soar Co o CHER lh ol Semiconductor Group 702 12.96