2N5545/46/47/JANTX/JANTXV
Vishay Siliconix
Document Number: 70253
S-04031—Rev. C, 04-Jun-01 www.vishay.com
8-1
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 – VGS2j Max (mV)
2N5545 –0.5 to –4.5 –50 1.5 –50 5
2N5546 –0.5 to –4.5 –50 1.5 –50 10
2N5547 –0.5 to –4.5 –50 1.5 –50 15
FEATURES BENEFITS APPLICATIONS
DMonolithic Design
DHigh Slew Rate
DLow Offset/Drift Voltage
DLow Gate Leakage: 3 pA
DLow Noise
DHigh CMRR: 100 dB
DTight Differential Match vs. Current
DImproved Op Amp Speed, Settling Time
Accuracy
DMinimum Input Error/Trimming Requirement
DInsignificant Signal Loss/Error Voltage
DHigh System Sensitivity
DMinimum Error with Large Input Signal
DWideband Differential Amps
DHigh-Speed, Temp-Compensated,
Single-Ended Input Amps
DHigh-Speed Comparators
DImpedance Converters
DESCRIPTION
The 2N5545/5546/5547JANTX/JANTXV are monolithic dual
n-channel JFETs designed to provide high input impedance
(IG < 50 pA) for general-purpose differential amplifiers. The
2N5545 features minimum system error and calibration (5 mV
offset maximum).
TO-71
Top View
G1
S1
D1
G2
D2
S2
1
2
3
6
5
4
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage –50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : Per Sidea250 mW. . . . . . . . . . . . . . . . . . . . . . . .
Totalb500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
2N5545/46/47/JANTX/JANTXV
Vishay Siliconix
www.vishay.com
8-2 Document Number: 70253
S-04031—Rev. C, 04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5545 2N5546 2N5547
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = –1 mA, VDS = 0 V –57 –50 –50 –50
Gate-Source
Cutoff V oltage VGS(off) VDS = 15 V, ID = 0.5 nA –2–0.5 –4.5 –0.5 –4.5 –0.5 –4.5 V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 3 0.5 8 0.5 8 0.5 8 mA
VGS = –30 V, VDS = 0 V –10 –100 –100 –100 pA
Gate Reverse Current IGSS TA = 150_C–20 –150 –150 –150 nA
Gate Operating Current IGVDG = 15 V, ID = 200 mA–3–50 –50 –50 pA
Gate-Source
Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source Forward
Transconductancebgfs VDS = 15 V, VGS = 0 V 2.5 1.5 6.0 1.5 6.0 1.5 6.0 mS
Common-Source
Output Conductancebgos
VDS = 15 V, VGS = 0 V
f = 1 kHz 2 25 25 25 mS
Common-Source
Input Capacitance Ciss VDS = 15 V, VGS = 0 V 3.5 6 6 6
Common-Source Reverse
T ransfer Capacitance Crss
VDS = 15 V, VGS = 0 V
f = 1 MHz 1.3 2 2 2 pF
Equivalent Input
Noise Voltage enVDS = 15 V, ID = 200 mA
f = 10 Hz 20 180 200 nV⁄
√Hz
Noise Figure NF RG = 1 MW0.1 3.5 5 dB
Matching
Differential VDG = 15 V, ID = 50 mA5 10 15
Differential
Gate-Source Voltage |VG7S1 –VGS2|VDG = 15 V, ID = 200 mA5 10 15 mV
Gate-Source Voltage
Differential Change
with Temperature
D|VGS1 –VGS2|
DTVDG = 15 V, ID = 200 mA
TA = –55 to 125_C10 20 40 mV/
_C
Saturation Drain
Current RatiocIDSS1
IDSS2 VDS = 15 V, VGS = 0 V 0.98 0.95 1 0.9 1 0.9 1
T ransconductance Ratiocgfs1
gfs2 VDS = 15 V, ID = 200 mA
f = 1 kHz 0.99 0.97 1 0.95 1 0.9 1
Differential Output
Conductance |gos1 –gos2|VDG = 15 V, VGS = 0 V
f = 1 kHz 0.1 1 2 3 mS
Differential Gate Current |IG1 –IG2|VDG = 15 V, ID = 200 mA
TA = 125_C1 5 5 5 nA
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NQP
b. Pulse test: PW v300 ms duty cycle v3%.
c. Assumes smaller value in the numerator .
2N5545/46/47/JANTX/JANTXV
Vishay Siliconix
Document Number: 70253
S-04031—Rev. C, 04-Jun-01 www.vishay.com
8-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
5
0–5–4–3–2–1
4
2
1
00302010 40 50
3
2.6
2.2
1
3
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage Gate Leakage Current
VGS(off) – Gate-Source Cutoff Voltage (V) VDG – Drain-Gate Voltage (V)
0.1 pA
10 pA
1 pA
IDSS @ VDS = 15 V, VGS = 0 V
gfs @ VDG = 15 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
IGSS @ 125_C
IGSS @ 25_C
TA = 125_C
TA = 25_C
200 mA
100 pA
1 nA
10 nA
100 nA
5
012168420
4
3
2
1
0
Output Characteristics Output Characteristics
VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)
–0.2 V
–0.4 V
–0.6 V
–0.3 V
–0.9 V
–0.6 V
–2.1 V
–1.5 V
–0.8 V
–1.0 V
–1.2 V
–1.2 V
–1.8 V
VGS(off) = –2 V
VGS = 0 V
5
4
3
2
1
0012168420
VGS = 0 V
VGS(off) = –3 V
2
1.6
1.2
0.8
0.4
0
Output Characteristics Output Characteristics
VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
–1.4 V
VGS(off) = –2 V
VGS = 0 V
2.5
2.0
1.5
1.0
0.5
00 0.6 0.80.40.2 1
VGS = 0 V
VGS(off) = –3 V –0.3 V
–0.9 V
–0.6 V
–2.1 V
–1.5 V
–1.2 V
–2.4 V
–1.8 V
1.8
1.4
50 mA
IG @ ID = 200 mA
–1.6 V
–1.4 V
0 0.6 0.80.40.2 1
–2.4 V
50 mA
gfs – Forward Transconductance (mS)
IDSS – Saturation Drain Current (mA)
IG – Gate Leakage
ID – Drain Current (mA)
ID – Drain Current (mA)ID – Drain Current (mA)
ID – Drain Current (mA)
2N5545/46/47/JANTX/JANTXV
Vishay Siliconix
www.vishay.com
8-4 Document Number: 70253
S-04031—Rev. C, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
0.01 0.1 1
10
1
0–1.5–1.0–0.5 –2.0 –2.5
4
3
2
1
0
0.01 0.1 1
130
120
80
110
100
90
0.01 0.1 1
100
10
1
100
5
0.1 10.01
100
80
60
40
20
0
Transfer Characteristics Gate-Source Differential Voltage
vs. Drain Current
Voltage Differential with Temperature
vs. Drain Current Common Mode Rejection Ratio
vs. Drain Current
CMRR (dB)
VGS – Gate-Source Voltage (V) ID – Drain Current (mA)
ID – Drain Current (mA) ID – Drain Current (mA)
ID – Drain Current (mA)
2N5545
TA = –55_C
125_C
VGS(off) = –2 V VDG = 15 V
TA = 25_C
5 – 10 V
VGS(off) = –3 V
Circuit Voltage Gain vs. Drain Current
2N5547
2N5545
2N5547
On-Resistance vs. Drain Current
ID – Drain Current (mA)
0.01 0.1 1
1 k
800
600
400
200
0
VGS(off) = –2 V
AV+gfs RL
1)RLgos
RL+10 V
ID
Assume VDD = 15 V, VDS = 5 V
VDS = 10 V
VGS(off) = –2 V VGS(off) = –3 V
25_C
VDG = 15 V
DTA = 25 to 125_C
DTA = –55 to 25_C
DVDG = 10 – 20 V
(mV)
VGS1 VGS2
–
V/ _C
()
t
D
Dm
VGS1 VGS2
–
VGS1 VGS2
–
DVDG
CMRR = 20 log D
rDS(on) – Drain-Source On-Resistance ( Ω )
ID – Drain Current (mA)
AV – Voltage Gain
2N5545/46/47/JANTX/JANTXV
Vishay Siliconix
Document Number: 70253
S-04031—Rev. C, 04-Jun-01 www.vishay.com
8-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10 100 1 k 100 k10 k
10
0–12 –16 –20–8–4
8
6
4
2
0
VGS – Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
– Input Capacitance (pF)Ciss
VDS = 0 V
5 V
f = 1 MHz 5
0–12 –20–16–8–4
4
3
2
1
0
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
– Reverse Feedback Capacitance (pF)Crss
VGS – Gate-Source Voltage (V)
VDS = 0 V
5 V
15 V
f = 1 MHz
16
12
8
4
0
20 Equivalent Input Noise Voltage vs. Frequency
f – Frequency (Hz)
VDS = 10 V
ID @ 200 mA
VGS = 0 V
2.5
2.0
1.5
1.0
0.5
00.01 0.1 1
Output Conductance vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125_C
0.01 0.1 1
2.5
2.0
1.5
1.0
0.5
0
Common-Source Forward Transconductance
vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125_C
1 k
0–3–5–4–2–1
800
600
400
200
0
10
8
6
4
2
0
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS = 15 V, VGS = 0 V, f = 1 kHz
rDS
gos
25_C
25_C
VGS(off) = –2 V VDS = 15 V
f = 1 kHz
VGS(off) = –2 V VDS = 15 V
f = 1 kHz
15 V
S)gos– Output Conductance ( m
en – Noise Voltage nV / Hz
gfs – Forward Transconductance (mS)
rDS(on) – Drain-Source On-Resistance ( Ω ) gos – Output Conductance (µS)
