6 Lake Street, Lawrence, MA 01841 3/98 REV: F
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MAXIMUM RATINGS
Ratings Symbol 2N2060 Units
Collector-Emitter Voltage VCEO 60 Vdc
Collector-Base Voltage VCBO 100 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Collector Current IC500 mAdc
One
Section Both
Sections
Total Power Dissipation @ TA = 250C (1)
@ TC = 250C (2) PT540
1.5 600
2.12 mW
W
Operating & Storage Junction
Temperature Range TJ, Tstg -65 to +200 0C
1) Derate linearly 3.08 mW/0C for TA > 250C for one section, 3.48 mW/0C for both sections
2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage(3)
IC = 100 µAdc V(BR)CBO 100 Vdc
Collector-Emitter Breakdown Voltage(3)
RBE ≤ 10 Ω, IC = 10 mAdc V(BR)CER 80 Vdc
Collector-Emitter Breakdown Voltage
IC = 30 mAdc V(BR)CEO 60 Vdc
Emitter-Base Breakdown Voltage
IE = 100 µAdc V(BR)EBO 7.0 Vdc
Collector-Base Cutoff Current
VCB = 80 Vdc ICBO 2.0 ηAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc IEBO 2.0 ηAdc
TECHNICAL DATA
TO-78
2N2060 JAN, JTX, JTXV
2N2060L JAN, JTX, JTXV
Processed per MIL-PRF-19500/270
UNITIZED DUAL NPN SILICON TRANSISTORS
MIL-PRF
QPL
DEVICES