Agilent AT-31011, AT-31033
Low Current, High Performance
NPN Silicon Bipolar Transistor
Data Sheet
Description
Agilent’s AT-31011 and AT-31033
are high performance NPN bipolar
transistors that have been
optimized for operation at low
voltages, making them ideal for use
in battery powered applications in
wireless markets. The AT-31033
uses the 3 lead SOT-23, while the
AT-31011 places the same die in the
higher performance 4 lead
SOT-143. Both packages are
industry standards compatible with
high volume surface mount
assembly techniques.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a mul-
tiplicity of tasks. The 10 emitter
finger interdigitated geometry
yields an extremely fast transistor
with low operating currents and
reasonable impedances.
Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.9 GHz, and 2.4 GHz
battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Applications
include cellular and PCS handsets
as well as Industrial-Scientific-
Medical systems. Typical
amplifier designs at 900 MHz yield
1.3 dB noise figures with 11 dB or
more associated gain at a 2.7 V, 1
mA bias. Moderate output power
capability (+9 dBm P1dB) coupled
with an excellent noise figure
yields high dynamic range for a
microcurrent device. High gain
capability at 1 V, 1 mA makes these
devices a good fit for 900 MHz
pager applications.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Agilent’s 10 GHz fT, 30
GHz fmax Self-Aligned-Transistor
(SAT) process. The die are nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of these devices.
BASE EMITTER
EMITTER COLLECTOR
BASE EMITTER
COLLECTOR
310
310
SOT-23 (AT-31033)
SOT-143 (AT-31011)
Outline Drawing
Features
• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation
• 900 MHz Performance:
AT-31011: 0.9 dB NF, 13 dB GA
AT-31033: 0.9 dB NF, 11 dB GA
• Characterized for End-Of-
Life Battery Use (2.7 V)
• SOT-143 SMT Plastic
Package
• Tape-And-Reel Packaging
Option Available
• Lead-free Option Available
2
AT-31011, AT-31033 Absolute Maximum Ratings
Symbol Parameter Units Absolute Maximum[1]
VEBO Emitter-Base Voltage V 1.5
V
CBO Collector-Base Voltage V 11
V
CEO Collector-Emitter Voltage V 5.5
ICCollector Current mA 16
PTPower Dissipation[2,3] mW 150
TjJunction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. TMounting Surface = 25°C.
3. Derate at 1.82 mW/°C for TC > 67.5°C.
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a
Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical,
Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310
Geometries.
Electrical Specifications, T
A = 25°C
AT-31011 AT-31033
Symbol Parameters and Test Conditions Units Min Typ Max Min Typ Max
NF Noise Figure
VCE = 2.7 V, IC = 1 mA f = 0.9 GHz dB 0.9[1] 1.2[1] 0.9[2] 1.2[2]
GAAssociated Gain
VCE = 2.7 V, IC = 1 mA f = 0.9 GHz dB 11[1] 13[1] 9[2] 11[2]
hFE Forward Current V
CE = 2.7 V - 70 300 70 300
Transfer Ratio IC = 1 mA
ICBO Collector Cutoff Current V
CB = 3 V µA 0.05 0.2 0.05 0.2
IEBO Emitter Cutoff Current VEB = 1 V µA 0.1 1.5 0.1 1.5
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.
1000 pF
V
BB
W = 10 L = 1860
W = 10 L = 1000 W = 30 L = 100 W = 30 L = 100
W = 10 L = 1860
1000 pF
V
CC
25 Ω
W = 10 L = 1025
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
NOT TO SCALE
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
DIMENSIONS IN MILS
Thermal Resistance[2]:
θjc = 550°C/W
3
P 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0 1.5
10
4
2
0.5 2.5
6
2.0
8
10 mA
5 mA
2 mA
2 mA
5 mA
10 mA
Ga (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
10 mA
1 mA
Ga (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
25
10
5
0.5 2.5
15
2.0
20
1 mA
10 mA
Characterization Information, T
A = 25°
AT-31011 AT-31033
Symbol Parameters and Test Conditions Units Typ Typ
P1dB Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 10 mA f = 0.9 GHz dBm 9 9
G1dB Gain at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 10 mA f = 0.9 GHz dB 15 13
IP3Output Third Order Intercept Point,
VCE = 2.7 V, IC = 10 mA (opt tuning) f = 0.9 GHz dBm 20 20
|S21|E2Gain in 50 Ω System; V
CE = 2.7 V, IC = 1 mA f = 0.9 GHz dB 10 9
CCB Collector-Base Capacitance V
CB = 3V, f = 1 MHz pF 0.04 0.04
Note:
1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and
including circuit losses.
Figure 7. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 2.7 V.
Figure 6. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 2.7 V.
Figure 5. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 2.7 V.
Figure 4. AT-31033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE = 2.7 V.
Figure 3. AT-31011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE = 2.7 V.
Figure 2. AT-31011 and AT-31033
Minimum Noise Figure and Amplifier
NF[1] vs. Frequency and Current at
VCE = 2.7 V.
C
NOISE FIGURE (dB)
0
0
FREQUENCY (GHz)
1 1.5
2.5
1
0.5
0.5 2.5
1.5
2
2
1 mA
10 mA
AMPLIFIER NF
NF MIN.
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
8
4
0.5 2.5
12
2.0
16
2 mA
5 mA
10 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
16
4
0.5 2.5
8
2.0
12
2 mA
5 mA
10 mA
4
AT-31011, AT-31033 Typical Performance
P 1dB (dBm)
0
0
FREQUENCY (GHz)
1.0 1.5
15
6
3
0.5 2.5
9
2.0
12
10 mA
2 mA
5 mA
2 mA
5 mA
10 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
8
4
0.5 2.5
12
2.0
16
2 mA
5 mA
10 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
8
4
0.5 2.5
12
2.0
16
2 mA
5 mA
10 mA
Figure 8. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 5 V.
Figure 9. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 5 V.
Figure 10. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 5 V.
P 1dB (dBm)
0
-4
FREQUENCY (GHz)
1.0 1.5
4
-2
0.5 2.5
0
2.0
2
5 mA
2 mA
Figure 13. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 1 V.
Figure 12. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
VCE = 1 V.
Figure 11. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE = 1 V.
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
8
4
0.5 2.5
12
2.0
16
2 mA
5 mA
G 1dB (dB)
0
0
FREQUENCY (GHz)
1.0 1.5
20
8
4
0.5 2.5
12
2.0
16
2 mA
5 mA
Figure 14. AT-31011 Noise Figure and
Associated Gain at VCE = 2.7 V,
IC= 1 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded)
Figure 16. AT-31011 and AT-31033
Intermodulation Products vs. Output
Power at VCE = 2.7 V, IC= 10 mA,
900 MHz with Optimal Tuning.
Figure 15. AT-31033 Noise Figure and
Associated Gain at VCE = 2.7 V,
IC= 1 mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded)
Ga (dBm)
-50
0
TEMPERATURE (°C)
50
25
10
5
0 100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE FIGURE (dB)
Ga
NF
Ga (dBm)
-50
0
TEMPERATURE (°C)
50
25
10
5
0 100
15
20
0
2.5
1.0
0.5
1.5
2.0
NOISE FIGURE (dB)
Ga
NF
IM3 (dBc)
-9
-80
POWER PER TONE (dBm)
-3 0
0
-60
-6 6
-40
3
-20
IM3 (dBc)
IM5 (dBc)
IM7 (dBc)
5
AT-31033 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 1 V, IC = 1 mA
ΓΓ
ΓΓ
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 0.5 0.90 12 0.70
0.9 0.6 0.82 28 0.60
1.8 1.1 0.57 68 0.38
2.4 1.6 0.41 100 0.22
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-31011 Typical Scattering Parameters, VCE = 1 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.95 -8 11.12 3.60 174 -37.91 0.01 85 0.999 -3
0.5 0.92 -34 10.58 3.38 150 -24.67 0.06 68 0.94 -15
0.9 0.81 -60 9.74 3.07 130 -20.67 0.09 53 0.89 -25
1.0 0.79 -66 9.33 2.93 125 -20.03 0.10 50 0.88 -27
1.5 0.66 -94 8.02 2.52 104 -18.34 0.12 36 0.80 -36
1.8 0.60 -110 7.18 2.28 93 -17.95 0.13 30 0.76 -40
2.0 0.57 -119 6.76 2.18 87 -17.73 0.13 27 0.74 -42
2.4 0.51 -139 5.56 1.90 74 -17.69 0.13 22 0.71 -46
3.0 0.45 -167 4.22 1.63 57 -17.95 0.13 19 0.67 -51
4.0 0.45 153 2.30 1.30 36 -18.33 0.12 22 0.64 -62
5.0 0.49 120 0.73 1.09 17 -17.33 0.14 32 0.62 -72
AT-31011 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 1 V, IC = 1 mA
ΓΓ
ΓΓ
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 0.5 0.90 13 0.85
0.9 0.6 0.85 29 0.73
1.8 1.1 0.68 67 0.46
2.4 1.6 0.55 98 0.28
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-31033 Typical Scattering Parameters, VCE = 1 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.94 -7 11.16 3.61 173 -35.95 0.02 85 0.999 -3
0.5 0.87 -34 10.37 3.30 144 -22.84 0.07 68 0.92 -17
0.9 0.70 -58 9.17 2.87 121 -19.06 0.11 56 0.85 -27
1.0 0.66 -64 8.69 2.72 115 -18.49 0.12 53 0.83 -29
1.5 0.46 -90 7.11 2.27 92 -16.94 0.14 45 0.74 -37
1.8 0.36 -106 6.16 2.03 81 -16.40 0.15 43 0.70 -40
2.0 0.31 -117 5.66 1.92 74 -16.06 0.16 42 0.68 -42
2.4 0.22 -143 4.48 1.67 62 -15.50 0.17 42 0.66 -45
3.0 0.16 166 3.19 1.44 46 -14.34 0.19 44 0.63 -50
4.0 0.23 101 1.39 1.17 25 -11.85 0.26 46 0.60 -62
5.0 0.33 67 0.05 1.01 9 -9.11 0.35 41 0.56 -77
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21
Figure 17. AT-31011 Gains vs.
Frequency at VCE = 1 V, IC= 1 mA.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21 MSG
Figure 18. AT-31033 Gains vs.
Frequency at VCE = 1 V, IC= 1 mA.
6
AT-31011 Typical Scattering Parameters, VCE = 2.7 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.96 -7 11.11 3.59 174 -39.92 0.01 86 0.999 -2
0.5 0.93 -32 10.66 3.41 152 -26.43 0.05 69 0.95 -13
0.9 0.83 -56 9.90 3.13 132 -22.32 0.08 55 0.91 -22
1.0 0.81 -61 9.53 2.99 128 -21.66 0.08 53 0.90 -24
1.5 0.68 -89 8.32 2.61 107 -19.90 0.10 40 0.84 -32
1.8 0.62 -104 7.52 2.38 96 -19.46 0.11 34 0.80 -36
2.0 0.58 -113 7.15 2.28 90 -19.24 0.11 31 0.78 -38
2.4 0.52 -133 5.98 1.99 77 -19.15 0.11 27 0.75 -42
3.0 0.45 -160 4.65 1.71 61 -19.37 0.11 25 0.72 -46
4.0 0.43 158 2.75 1.37 39 -19.60 0.10 29 0.69 -56
5.0 0.46 123 1.16 1.14 20 -18.16 0.12 41 0.68 -66
AT-31011 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 2.7 V, IC = 1 mA
ΓΓ
ΓΓ
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 0.5 0.92 13 0.85
0.9 0.6 0.85 29 0.73
1.8 1.1 0.68 67 0.46
2.4 1.6 0.55 98 0.28
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-31033 Typical Scattering Parameters, VCE = 2.7 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.94 -7 11.07 3.58 173 -37.44 0.01 86 0.999 -3
0.5 0.89 -32 10.35 3.29 146 -24.11 0.06 70 0.94 -15
0.9 0.72 -54 9.27 2.91 123 -20.27 0.10 58 0.87 -25
1.0 0.69 -59 8.80 2.76 118 -19.65 0.10 56 0.86 -26
1.5 0.48 -83 7.32 2.32 95 -18.01 0.13 48 0.78 -33
1.8 0.38 -97 6.39 2.09 84 -17.43 0.13 46 0.74 -36
2.0 0.33 -107 5.91 1.97 77 -17.07 0.14 45 0.72 -38
2.4 0.23 -130 4.73 1.72 65 -16.46 0.15 46 0.70 -41
3.0 0.14 -178 3.43 1.48 49 -15.25 0.17 48 0.67 -46
4.0 0.19 103 1.62 1.21 28 -12.62 0.23 51 0.65 -57
5.0 0.30 67 0.25 1.03 12 -9.72 0.33 47 0.63 -71
AT-31033 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 2.7 V, IC = 1 mA
ΓΓ
ΓΓ
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 0.5 0.90 12 0.70
0.9 0.6 0.82 28 0.60
1.8 1.1 0.57 68 0.38
2.4 1.6 0.41 100 0.22
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21
Figure 19. AT-31011 Gains vs.
Frequency at VCE = 2.7 V, IC= 1 mA.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21 MSG
Figure 20. AT-31033 Gains vs.
Frequency at VCE = 2.7 V, IC= 1 mA.
7
AT-31011 Typical Scattering Parameters, VCE = 2.7 V, IC = 10 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.74 -23 27.42 23.49 161 -41.00 0.01 77 0.95 -9
0.5 0.46 -85 22.65 13.57 116 -30.64 0.03 59 0.68 -24
0.9 0.32 -121 18.73 8.64 97 -27.55 0.04 59 0.59 -27
1.0 0.30 -128 17.91 7.86 93 -27.05 0.04 59 0.58 -27
1.5 0.25 -161 14.77 5.48 79 -24.48 0.06 61 0.55 -30
1.8 0.25 -177 13.29 4.62 72 -23.26 0.07 61 0.54 -32
2.0 0.24 174 12.42 4.18 68 -22.51 0.07 61 0.53 -33
2.4 0.25 157 10.97 3.54 60 -21.12 0.09 59 0.53 -36
3.0 0.27 138 9.11 2.86 49 -19.31 0.11 58 0.52 -40
4.0 0.31 113 6.86 2.20 33 -16.88 0.14 54 0.51 -50
5.0 0.37 94 5.19 1.82 17 -14.75 0.18 48 0.50 -59
AT-31011 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 2.7 V, IC = 10 mA
ΓΓ
ΓΓ
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 1.3 0.45 11 0.55
0.9 1.4 0.37 33 0.46
1.8 1.7 0.25 86 0.29
2.4 2.0 0.18 129 0.18
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-31033 Typical Scattering Parameters, VCE = 2.7 V, IC = 10 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.72 -21 26.80 21.87 154 -38.46 0.01 80 0.92 -10
0.5 0.33 -49 19.93 9.92 106 -27.31 0.04 73 0.66 -20
0.9 0.19 -47 15.51 5.96 88 -22.90 0.07 72 0.61 -22
1.0 0.17 -46 14.66 5.41 85 -22.03 0.08 72 0.60 -23
1.5 0.11 -28 11.44 3.73 72 -18.74 0.12 69 0.59 -27
1.8 0.10 -14 9.99 3.16 66 -17.26 0.14 67 0.58 -30
2.0 0.10 -6 9.15 2.87 62 -16.40 0.15 65 0.58 -32
2.4 0.10 9 7.78 2.45 54 -14.88 0.18 62 0.57 -35
3.0 0.12 23 6.16 2.03 43 -12.99 0.22 57 0.55 -41
4.0 0.15 34 4.30 1.64 27 -10.49 0.30 48 0.52 -53
5.0 0.20 36 3.01 1.41 12 -8.53 0.37 38 0.48 -65
AT-31033 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 2.7 V, IC = 10 mA
ΓΓ
ΓΓ
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 1.3 0.42 10 0.38
0.9 1.4 0.31 30 0.34
1.8 1.7 0.16 80 0.23
2.4 2.0 0.08 118 0.17
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21 MSG
MSG
MAG
Figure 22. AT-31033 Gains vs.
Frequency at VCE = 2.7 V, IC= 10 mA.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21 MSG
Figure 21. AT-31011 Gains vs.
Frequency at VCE = 2.7 V, IC= 10 mA.
8
AT-31011 Typical Scattering Parameters, VCE = 5 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.96 -7 11.10 3.59 174 -40.35 0.01 84 0.999 -2
0.5 0.94 -31 10.67 3.41 153 -26.95 0.04 69 0.96 -13
0.9 0.83 -54 9.93 3.14 133 -22.80 0.07 56 0.92 -22
1.0 0.81 -60 9.57 3.01 129 -22.18 0.08 53 0.91 -23
1.5 0.68 -86 8.41 2.63 108 -20.33 0.10 41 0.85 -31
1.8 0.62 -101 7.62 2.40 97 -19.85 0.10 35 0.81 -35
2.0 0.58 -110 7.27 2.31 91 -19.64 0.10 32 0.79 -37
2.4 0.52 -129 6.10 2.02 78 -19.50 0.11 28 0.76 -41
3.0 0.44 -157 4.78 1.73 62 -19.68 0.10 26 0.73 -45
4.0 0.42 161 2.90 1.40 40 -19.86 0.10 31 0.70 -55
5.0 0.45 125 1.33 1.17 21 -18.35 0.12 43 0.70 -65
AT-31011 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 5 V, IC = 1 mA
ΓΓ
ΓΓ
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 0.5 0.92 13 0.85
0.9 0.6 0.85 29 0.73
1.8 1.1 0.68 67 0.46
2.4 1.6 0.55 98 0.28
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-31033 Typical Scattering Parameters, VCE = 5 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.95 -7 10.93 3.52 173 -37.78 0.01 85 0.999 -3
0.5 0.89 -31 10.24 3.25 147 -24.43 0.06 70 0.94 -15
0.9 0.73 -52 9.20 2.88 124 -20.49 0.09 59 0.88 -24
1.0 0.70 -57 8.75 2.74 119 -19.91 0.10 57 0.87 -26
1.5 0.49 -80 7.30 2.32 96 -18.15 0.12 49 0.79 -32
1.8 0.39 -93 6.41 2.09 85 -17.54 0.13 47 0.75 -36
2.0 0.34 -102 5.93 1.98 78 -17.19 0.14 46 0.73 -37
2.4 0.23 -122 4.77 1.73 66 -16.55 0.15 46 0.71 -40
3.0 0.13 -166 3.49 1.49 50 -15.35 0.17 49 0.68 -45
4.0 0.17 107 1.71 1.22 29 -12.83 0.23 51 0.66 -56
5.0 0.28 68 0.32 1.04 12 -9.96 0.32 48 0.64 -69
AT-31033 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 5 V, IC = 1 mA
ΓΓ
ΓΓ
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 0.5 0.90 12 0.70
0.9 0.6 0.82 28 0.60
1.8 1.1 0.57 68 0.38
2.4 1.6 0.41 100 0.22
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21
Figure 23. AT-31011 Gains vs.
Frequency at VCE = 5 V, IC= 1 mA.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21 MSG
Figure 24. AT-31033 Gains vs.
Frequency at VCE = 5 V, IC= 1 mA.
9
AT-31011 Typical Scattering Parameters, VCE = 5 V, IC = 10 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.77 -21 27.41 23.46 162 -41.49 0.01 80 0.95 -8
0.5 0.48 -77 22.97 14.07 118 -30.66 0.03 61 0.70 -24
0.9 0.32 -112 19.14 9.06 98 -27.77 0.04 59 0.61 -27
1.0 0.30 -119 18.34 8.26 95 -27.11 0.04 60 0.59 -27
1.5 0.23 -151 15.23 5.78 80 -24.56 0.06 60 0.56 -29
1.8 0.22 -168 13.75 4.87 73 -23.37 0.07 60 0.55 -31
2.0 0.21 -178 12.91 4.42 69 -22.62 0.07 60 0.55 -32
2.4 0.21 163 11.46 3.74 61 -21.25 0.09 59 0.54 -36
3.0 0.23 142 9.60 3.02 50 -19.45 0.11 58 0.53 -39
4.0 0.27 116 7.36 2.33 34 -17.08 0.14 54 0.52 -48
5.0 0.33 96 5.70 1.93 19 -14.97 0.18 48 0.51 -58
AT-31011 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 5 V, IC = 10 mA
ΓΓ
ΓΓ
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang
0.5[2] 1.3 0.45 11 0.55
0.9 1.4 0.37 33 0.46
1.8 1.7 0.25 86 0.29
2.4 2.0 0.18 129 0.18
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values
unachievable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
AT-31033 Typical Scattering Parameters, VCE = 5 V, IC = 10 mA, Common Emitter, ZO = 50 Ω
Freq. S11 S21 S12 S22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 0.75 -19 26.79 21.84 155 -38.82 0.01 79 0.92 -10
0.5 0.37 -45 20.17 10.20 107 -27.39 0.04 73 0.67 -20
0.9 0.23 -42 15.79 6.16 90 -23.00 0.07 72 0.62 -22
1.0 0.21 -42 14.94 5.58 86 -22.11 0.08 72 0.61 -23
1.5 0.15 -30 11.75 3.87 73 -18.86 0.11 69 0.60 -27
1.8 0.14 -21 10.30 3.27 67 -17.37 0.14 66 0.59 -29
2.0 0.13 -17 9.47 2.97 63 -16.51 0.15 65 0.58 -31
2.4 0.13 -7 8.08 2.54 55 -15.00 0.18 62 0.57 -35
3.0 0.13 3 6.47 2.11 45 -13.14 0.22 57 0.56 -41
4.0 0.14 19 4.61 1.7 29 -10.67 0.29 48 0.53 -52
5.0 0.18 28 3.33 1.47 14 -8.73 0.37 38 0.49 -64
AT-31033 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 5 V, IC = 10 mA
ΓΓ
ΓΓ
ΓOPT
Freq Fmin[1] Rn
GHz dB Mag Ang -
0.5[2] 1.3 0.42 10 0.38
0.9 1.4 0.31 30 0.34
1.8 1.7 0.16 80 0.23
2.4 2.0 0.08 118 0.17
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values
unacheivable in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
S21 MSG
MSG
MAG
Figure 26. AT-31033 Gains vs.
Frequency at VCE = 5 V, IC= 10 mA.
GAIN (dB)
0
0
FREQUENCY (GHz)
23
30
15
10
4
20
MSG
MAG
S21
MSG
Figure 25. AT-31011 Gains vs.
Frequency at VCE = 5 V, IC= 10 mA.
10
SOT-143 Plastic Package
Package Dimensions
SOT-23 Plastic Package
Ordering Information
Part Numbers No. of Devices Comments
AT-31011-BLK AT-31033-BLK 100 Bulk
AT-31011-BLKG AT-31033-BLKG 100 Bulk
AT-31011-TR1 AT-31033-TR1 3000 7" Reel
AT-31011-TR1G AT-31033-TR1G 3000 7" Reel
AT-31011-TR2 AT-31033-TR2 10000 13" Reel
AT-31011-TR2G AT-31033-TR2G 10000 13" Reel
Note: Order part number with a “G” suffix if lead-free option is desired.
e
B
e2
e1
E1
C
E
XXX
L
D
A
A1
Notes:
XXX-package marking
Drawings are not to scale
DIMENSIONS (mm)
MIN.
0.79
0.000
0.37
0.086
2.73
1.15
0.89
1.78
0.45
2.10
0.45
MAX.
1.20
0.100
0.54
0.152
3.13
1.50
1.02
2.04
0.60
2.70
0.69
SYMBOL
A
A1
B
C
D
E1
e
e1
e2
E
L
eB
e2
B1
e1
E1
C
E
XXX
L
D
A
A1
Notes:
XXX-package marking
Drawings are not to scale
DIMENSIONS (mm)
MIN.
0.79
0.013
0.36
0.76
0.086
2.80
1.20
0.89
1.78
0.45
2.10
0.45
MAX.
1.097
0.10
0.54
0.92
0.152
3.06
1.40
1.02
2.04
0.60
2.65
0.69
SYMBOL
A
A1
B
B1
C
D
E1
e
e1
e2
E
L
e
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Copyright © 2005 Agilent Technologies, Inc.
Obsoletes 5965-8919E
March 28, 2005
5989-2642EN
