TSHA4400, TSHA4401
www.vishay.com Vishay Semiconductors
Rev. 1.8, 15-Sep-14 1Document Number: 81017
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Infrared Emitting Diode, 875 nm, GaAlAs
DESCRIPTION
The TSHA440. series are infrared, 875 nm emitting diodes in
GaAlAs technology, molded in a clear, untinted plastic
package.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 20°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared remote control and free air data transmission
systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in
transmission space between emitter and detector,
because of the low absorption of 875 nm radiation in glass
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8636
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns)
TSHA4400 20 ± 20 875 600
TSHA4401 30 ± 20 875 600
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSHA4400 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
TSHA4401 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 2A
Power dissipation PV180 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature t 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W
TSHA4400, TSHA4401
www.vishay.com Vishay Semiconductors
Rev. 1.8, 15-Sep-14 2Document Number: 81017
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0 102030405060708090100
21311
T
amb
- Ambient Temperature (°C)
PV - Power Dissipation (mW)
RthJA = 300 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21312
I
F
- Forward Current (mA)
R
thJA
= 300 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.5 1.8 V
IF = 1.5 A, tp = 100 μs VF3.2 4.9 V
Temperature coefficient of VFIF = 100 mA TKVF -1.6 mV/K
Reverse current VR = 5 V IR100 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj20 pF
Temperature coefficient of eIF = 100 mA TKe-0.7 %/K
Angle of half intensity ± 20 deg
Peak wavelength IF = 100 mA p875 nm
Spectral bandwidth IF = 100 mA 80 nm
Temperature coefficient of pIF = 100 mA TKp0.2 nm/K
Rise time IF = 100 mA tr600 ns
IF = 1.5 A tr300 ns
Fall time IF = 100 mA tf600 ns
IF = 1.5 A tf300 ns
Virtual source diameter d 1.8 mm
TYPE DEDICATED CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Radiant intensity
IF = 100 mA, tp = 20 ms TSHA4400 Ie12 20 60 mW/sr
TSHA4401 Ie16 30 60 mW/sr
IF = 1.5 mA, tp = 100 μs TSHA4400 Ie140 240 mW/sr
TSHA4401 Ie190 360 mW/sr
Radiant power IF = 100 mA, tp = 20 ms TSHA4400 e20 mW
TSHA4401 e24 mW
TSHA4400, TSHA4401
www.vishay.com Vishay Semiconductors
Rev. 1.8, 15-Sep-14 3Document Number: 81017
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Radiant Power vs. Forward Current
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
tp- Pulse Duration (ms)
94 7947
10 0
10 1
101
10-1
10 -1 10 010 2
10 -2
tp/T = 0.01, I FM =2A
0.05
0.1
0.5
0.02
0.2
I - Forward Current (A)
F
VF- Forward Voltage (V)
94 8005
101
102
103
104
tp = 100 µs
tp/T= 0.001
43210
I - Forward Current (mA)
F
0.7
0.8
0.9
1.0
1.1
1.2
VF rel - Relative Forward Voltage (V)
94 7990 Tamb - Ambient Temperature (°C)
100806040200
IF = 10 mA
IF- Forward Current (mA)
94 7942
103
101102104
100
1
10
100
1000
I - Radiant Intensity (mW/sr)
e
TSHA 4401
TSHA 4400
- Radiant Power (mW)
e
I
F
- Forward Current (mA)
94 7943
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Φ
- 10 10 500 100
0
0.4
0.8
1.2
1.6
I ;
e rel e rel
140
94 8020
IF= 20 mA
Φ
Tamb - Ambient Temperature (°C)
TSHA4400, TSHA4401
www.vishay.com Vishay Semiconductors
Rev. 1.8, 15-Sep-14 4Document Number: 81017
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
780 880
λ- Wavelenght (nm)
980
94 8000
- Relative Radiant Power
e
0
0.25
0.5
0.75
1.0
1.25
IF= 100 mA
pe
Φ
ee
)/
λ
()
λ
()
rel
=
λΦΦ (
Φ
Ie, rel - Relative Radiant Intensity
0.6
80°
0°
0.7
0.4 0.2 0
30°
70°
60°
50°
40°
10° 20°
1.0
0.9
0.8
ϕ- Angular Displacement
Drawing-No.: 6.544-5264.01-4
Issue: 4; 28.07.14
technical drawings
according to DIN
specications
3.2 ± 0.15
AC
< 0.6
3.4 ± 0.15
4.4 ± 0.3
5.8 ± 0.3
34.4 ± 0.5
1.5 ± 0.5
2.54 nom.
(2.5)
0.5
+ 0.2
- 0.1
Ø 2.9 ± 0.1
AREA NOT PLANE
R1.4 (sphere)
0.4
+ 0.15
- 0.05
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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