FDC6306P
FDC6306P Rev . C
FDC6306P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
February 1999
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -20 V
VGSS Gate-Source V ol tage ±8V
IDDrain Current - Continuous (Note 1a) -1.9 A
- Pulsed -5
PDPower Diss i pation for Si ngl e Operat i on (Note 1a) 0.96 W
(Note 1b) 0.9
(Note 1c) 0.7
TJ, Tstg Operating and St orage Junction Tem perature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resis tance, J unc tion-to-Am bi ent (Note 1a) 130 °C/W
RθJC Thermal Resis tance, J unc tion-to-Case (Note 1) 60 °C/W
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
.306 FDC6306P 7’’ 8mm 3000 units
5
6
4
2
3
1
General Description
These P-Channel 2.5V specified MOSFET s are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.
Applications
•Load switch
•Battery protection
• Power management
Features
•-1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V
RDS(on) = 0.250Ω @ VGS = -2.5 V
•Low gate charge (3 nC typical).
•Fast switching speed.
• High performance trench technology for extremely
low RDS(ON).
•SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D1
S2
G1
D2
S1
G2
SuperSOT -6
TM
FDC6306P
FDC6306P Rev . C
Electrical Characteristics TA = 25°C unless otherwise noted
S
y
mbol Parameter Test Conditions Min T
yp
Max Units
Off Characteristics
BVDSS Drain-Source Break down V ol tage VGS = 0 V, ID = -250 µA-20 V
∆BVDSS
∆TJ
Breakdown Voltage Tem perature
Coefficient ID = -250
µ
A
,
Referenced to 25°C-18 mV/
°C
IDSS Zero Gate Voltage Drain Current VDS = -16 V, V GS = 0 V -1 µA
IGSSF Gate-Body Leak age Current, Forward VGS = 8 V, VDS = 0 V 100 nA
IGSSR Gate-Body Leak age Current, Reverse VGS = -8 V, VDS = 0 V -100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Vol t age VDS = VGS, ID = -250 µA -0.4 -0.9 -1.5 V
∆VGS(th)
∆TJ
Gate Threshold Volt age
Temperature Coefficient ID = -250
µ
A
,
Referenced to 25°C3 mV/
°C
RDS(on) Stat i c Drain-Source
On-Resistance VGS = -4.5 V, ID = -1.9 A
VGS = -4.5 V, ID = -1.9 A @125°C
VGS = -2.5 V, ID = -1.7 A
0.127
0.182
0.194
0.170
0.270
0.250
Ω
ID(on) On-Stat e Drain Current VGS = -4.5 V, VDS =- 5 V -5 A
gFS Forward Transconductanc e VDS = -5 V, ID = -1.9 A 4 S
Dynamic Characteristics
Ciss Input Capacit anc e 441 pF
Coss Output Capacit anc e 127 pF
Crss Reverse Transfer Capacitance
VDS = -10 V, V GS = 0 V,
f = 1.0 MHz
67 pF
Switching Characteristics (Note 2)
td(on) Turn-On Delay Time 6 12 ns
trTurn-On Rise Time 9 18 ns
td(off) Turn-Of f Delay Ti m e 14 25 ns
tfTurn-Off Fall T i m e
VDD = -10 V, ID = -1 A ,
VGS = -4.5 V, RGEN = 6 Ω
39ns
QgTotal Gate Charge 3 4.2 nC
Qgs Gate-Source Charge 0.7 nC
Qgd Gate-Drain Charge
VDS = -10 V, I D = -1.9 A,
VGS = -4.5 V
0.8 nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -0.8 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.8 A (Note 2) -0.8 -1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.Both devices are assumed to be operating and
sharing the dissipated heat energy equally.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse W idth ≤ 300 µs, Duty Cycle ≤ 2.0%
a) 130 °C/W when
mounted on a 0.125 in2
pad of 2 oz. copper.
b) 140 °C/W when
mounted on a 0.005 in2
pad of 2 oz. copper.
c) 180 °C/W when
mounted on a 0.0015 in2
pad of 2 oz. copper.
FDC6306P
FDC6306P Rev . C
Typical Characteristics
Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation
with Drain Current and Gate Voltage.
Figure 5. T ransfer Characteristics. Figure 6. Body Diode Forward V oltage
V ariation with Source Current
and Temperature.
Figure 3. On-Resistance V ariation
with Temperature. Figure 4. On-Resistance V ariation
with Gate-to-Source V oltage.
012345
0
2
4
6
8
10
12
-V , DRAIN-SO URCE VOLT AGE (V)
- I , DRA IN-SOURCE CURRE NT (A )
DS
D
-2.5 V
-4.0V
-2.0 V
-3.5 V
-3.0 V
V = -4 .5V
GS
0246810
0.8
1
1.2
1.4
1.6
1.8
2
- I , DRAI N CURRENT (A)
DRAI N-SOURCE ON-RESIS T ANCE
V = -2 .5 V
GS
D
R , NORMALIZED
DS(on)
-4.5V
-3.5V -4.0V
-3.0V
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAI N-SOURCE ON-RES IS T ANCE
J
R , NORMALIZED
DS(ON)
V = -4.5V
GS
I = -1.9 A
D
12345
0
0.1
0.2
0.3
0.4
0.5
-V , GATE TO SOURCE V OLT AGE ( V)
GS
R , ON-RESISTAN CE (OHM)
DS(ON)
I = -1A
D
T = 1 25° C
J
25°C
0 0.2 0.4 0.6 0.8 1 1.2 1.4
0.0001
0.001
0.01
0.1
1
10
-V , BODY D I O DE F ORW AR D VO L T AG E (V )
-I , REV ERSE DRA IN CURRENT (A )
25°C
-55°C
V = 0V
GS
SD
S
T = 125°C
J
012345
0
2
4
6
8
10
-V , G ATE TO SOU RC E VO L TAG E ( V)
- I , DRAI N CURRE NT (A )
V = -5V
DS
GS
D
T = -55°C
J
125°C
25°C
FDC6306P
FDC6306P Rev . C
Typical Characteristics (continued)
Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0.1 0.2 0.5 1 2 5 10 20 50
0.01
0.03
0.1
0.3
1
3
10
30
-V , DRAIN-SOURCE VOLTAGE (V)
-I , DRAIN CURRENT (A)
RDS(ON) LIMIT
D
DS
V = -4.5V
SINGLE PULSE
R = 180°C/W
T = 25°C
θJA
GS
A
DC
1s
100ms
10ms
1ms
100us
0.01 0.1 1 10 100 300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =180°C/W
T = 25°C
θJAA
0.0001 0.001 0.01 0.1 1 10 100 300
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESIST ANCE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r(t), NORMALIZED EFFECTIVE
Duty Cycle, D = t / t
12
T - T = P * R (t)
θ
JA
A
J
P(pk)
t
1 t
2
R (t) = r(t) * R
R =180°C/W
θ
JA
θ
JA
θ
JA
01234
0
1
2
3
4
5
Q , GATE CHAR GE ( nC )
-V , GATE-SOURCE VOLTAGE (V)
g
GS
V = -5V
DS
-15V
I = -1.9A
D
-10V
0.1 0.2 0.5 1 2 5 10 20
30
100
300
1000
-V , D RAIN TO SO U R CE VO L TAG E (V)
CA PA CITANCE (pF )
DS
C
iss
f = 1 MHz
V = 0 V
GS
C
oss
C
rss
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
SyncFET™
TinyLogic™
UHC™
VCX™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Rev. D
