MRF8S7170NR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for base station applications with frequencies from 618 to
803 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Single--Carrier W--CDMA Performance: VDD =28Volts,I
DQ =
1200 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth =
3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency (1)
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
728 MHz 19.7 37.1 6.2 --38.7
748 MHz 19.5 37.0 6.1 --37.5
768 MHz 19.4 37.9 6.1 --37.8
Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW Output
Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced
Ruggedness
Typical Pout @ 1 dB Compression Point ≃182 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
225C Capable Plastic Package
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13--inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +70 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 C
Case Operating Temperature TC150 C
Operating Junction Temperature (2,3) TJ225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value (3,4) Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 170 W CW, 28 Vdc, IDQ = 1200 mA
Case Temperature 81C, 50 W CW, 28 Vdc, IDQ = 1200 mA
RJC
0.30
0.37
C/W
1. This part is not recommended for Doherty applications across the 600 to 728 MHz band.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF8S7170N
Rev. 2, 2/2014
Freescale Semiconductor
Technical Data
618--803 MHz, 50 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
OM--780--2L
PLASTIC
MRF8S7170NR3
Freescale Semiconductor, Inc., 2010, 2014.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
MRF8S7170NR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) IV
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 C
Table 5. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =70Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 355 Adc)
VGS(th) 1.5 2.3 3Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
D= 1200 mAdc, Measured in Functional Test)
VGS(Q) 2.3 3.1 3.8 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2.9Adc)
VDS(on) 0.1 0.22 0.3 Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1200 mA, Pout = 50 W Avg., f = 748 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 18.0 19.5 21.0 dB
Drain Efficiency D34.0 37.0 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 5.7 6.1 —dB
Adjacent Channel Power Ratio ACPR —--37.5 --35.0 dBc
Input Return Loss IRL — -- 2 4 -- 9 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1200 mA, Pout =50WAvg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
728 MHz 19.7 37.1 6.2 --38.7 -- 1 3
748 MHz 19.5 37.0 6.1 --37.5 -- 2 4
768 MHz 19.4 37.9 6.1 --37.8 -- 1 6
1. Part internally matched both on input and output.
(continued)
MRF8S7170NR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1200 mA, 618--803 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —182 — W
IMD Symmetry @ 160 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—16 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —65 —MHz
Gain Flatness in 185 MHz Bandwidth @ Pout =50WAvg. GF—0.5 —dB
Gain Variation over Temperature
(--30Cto+85C)
G — 0.017 —dB/C
Output Power Variation over Temperature
(--30Cto+85C)
P1dB —0.0048 —dB/C
4
RF Device Data
Freescale Semiconductor, Inc.
MRF8S7170NR3
Figure 1. MRF8S7170NR3 Test Circuit Component Layout
B1
CUT OUT AREA
MRF8S7170N
Rev. 0
R1 C5
C6
C7
C1
C3
C4 R2
C2
C22 C23 C24 C25
C26
C15
C20 C14
C8
C9
C12 C13
C10 C11
C16 C17 C18 C19
C21
Table 6. MRF8S7170NR3 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Ferrite Bead, Short 2743019447 Fair--Rite
C1 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC
C2 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC
C3, C4 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC
C5 47 F, 63 V Electrolytic Capacitor 476KXM063M Illinois Capacitor
C6 6.8 F, 100 V Chip Capacitor C4532X7R1H685KT TDK
C7 100 pF Chip Capacitor ATC100B101JT500XT ATC
C8, C9 11 pF Chip Capacitors ATC100B110JT500XT ATC
C10, C12 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C11, C13 7.5 pF Chip Capacitors ATC100B7R5CT500XT ATC
C14 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC
C15, C16, C17, C22, C23 39 pF Chip Capacitors ATC100B390JT500XT ATC
C18, C19, C24, C25 10 F, 25 V Chip Capacitors C5750X7R1E106KT TDK
C20 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC
C21, C26 470 F, 63 V Electrolytic Capacitors 477KXM063M Illinois Capacitor
R1 2K , 1/4 W Chip Resistor CRCW12062K00FKEA Vishay
R2 4.3 , 1/4 W Chip Resistor CRCW12064R30FKEA Vishay
PCB 0.030,r=3.5 RF--35 Taconic
MRF8S7170NR3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
17.8
21
20.6
20.2
19.8
19.4
19
18.6
18.2
17
17.4
IRL, INPUT RETURN LOSS (dB)
710
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
-- 1 5
-- 1 9
-- 2 3
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
720 730 740 750 760 770 780 790
-- 2 7
PARC
PARC (dB)
ACPR (dBc)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--U
IM3--L
IM5--U
IM5--L IM7--U
VDD =28Vdc,P
out = 160 W (PEP), IDQ = 1200 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 748 MHz
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 4
-- 5
50
0
-- 2
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
30 90 110 130
30
60
50
55
45
DDRAIN EFFICIENCY (%)
-- 1 d B = 4 2 W
D
PARC
ACPR (dBc)
-- 5 0
-- 2 0
-- 3 0
-- 4 0
-- 3 5
-- 4 5
20
Gps, POWER GAIN (dB)
18.5
19.5
19
17.5
17
Gps
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
-- 2 d B = 6 0 W
-- 3 d B = 9 6 W
VDD =28Vdc,P
out =50W(Avg.),I
DQ = 1200 mA
Single--Carrier W--CDMA
IM7--L
35
-- 3 8
40
38
36
34
32
--35.5
-- 3 6
--36.5
-- 3 7
--37.5
-- 7
-- 11
-- 1
-- 1 . 5
-- 2
-- 2 . 5
0
-- 0 . 5
70
-- 3 40
-- 2 5
18
ACPR
VDD =28Vdc,I
DQ = 1200 mA
f = 748 MHz, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
6
RF Device Data
Freescale Semiconductor, Inc.
MRF8S7170NR3
TYPICAL CHARACTERISTICS
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
10
22
0
72
36
24
12
D, DRAIN EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
20
100 300
-- 6 0
ACPR (dBc)
0
-- 2 0
-- 3 0
Figure 6. Broadband Frequency Response
10
22
600
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 1200 mA
14
650
GAIN (dB)
Gain
700 800 900 1000
IRL
-- 3 0
0
-- 1 5
-- 2 0
-- 2 5
IRL (dB)
12
768 MHz
18
16
60
48
-- 5 0
-- 4 0
748 MHz
728 MHz
20
-- 1 0
-- 5
14
12 748 MHz
728 MHz
1
VDD =28Vdc,I
DQ = 1200 mA
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
748 MHz
768 MHz
768 MHz
728 MHz
10
18
16
750 850 950
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
13579
MRF8S7170NR3
7
RF Device Data
Freescale Semiconductor, Inc.
VDD =28Vdc,I
DQ = 1200 mA, Pout =50WAvg.
f
MHz
Zsource
Zload
710 0.876 -- j2.237 1.685 -- j0.887
720 0.910 -- j2.150 1.659 -- j0.776
730 0.942 -- j2.080 1.650 -- j0.683
740 0.970 -- j2.032 1.660 -- j0.610
750 0.981 -- j2.013 1.677 -- j0.563
760 0.961 -- j2.009 1.688 -- j0.550
770 0.911 -- j1.996 1.687 -- j0.551
780 0.843 -- j1.955 1.660 -- j0.557
790 0.787 -- j1.881 1.620 + j0.548
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 9. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
8
RF Device Data
Freescale Semiconductor, Inc.
MRF8S7170NR3
LOAD PULL CHARACTERISTICS
VDD =28Vdc,I
DQ = 1200 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle (1)
f
(MHz)
P1dB P3dB
Watts dBm Watts dBm
600 129 51.1 178 52.5
658 219 53.4 275 54.4
698 219 53.4 282 54.5
728 229 53.6 310 54.9
748 227 53.5 303 54.8
768 214 53.3 293 54.6
805 219 53.4 275 54.4
1. Output power capability drops rapidly below 658 MHz.
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
f
(MHz)
Zsource
Zload
600 P1dB 2.90 -- j0.40 0.70 -- j2.20
658 P1dB 0.80 -- j1.10 1.20 -- j1.00
698 P1dB 0.70 -- j1.88 1.10 -- j0.97
728 P1dB 0.61 -- j2.32 0.72 -- j1.32
748 P1dB 0.73 -- j2.60 0.81 -- j1.27
768 P1dB 0.72 -- j2.82 0.58 -- j1.46
805 P1dB 0.90 -- j3.20 1.00 -- j1.20
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S7170NR3
9
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8S7170NR3
MRF8S7170NR3
11
RF Device Data
Freescale Semiconductor, Inc.
12
RF Device Data
Freescale Semiconductor, Inc.
MRF8S7170NR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Feb. 2010 Initial Release of Data Sheet
1Oct. 2010 Changed Human Body Model ESD rating from Class 1C to Class 2 to reflect recent ESD test results of the
device, p. 2.
2Feb. 2014 Changed operating frequency from 728–768 MHz to 618–803 MHz due to expanded device frequency
capability resulting from additional test data, p. 1
Typical Single--Carrier W--CDMA Performance table: added footnote 1, “This part is not recommended for
Doherty applications across the 600 to 728 MHz band,” p. 1
Table 3, ESD Protection Characteristics: removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production.
ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD
sensitive devices, p. 2
Fig. 10, Pulsed CW Output Power versus Input Power @ 28 V: updated to reflect additional test data;
added footnote 1, “Output power capability drops rapidly below 658 MHz,” p. 8
MRF8S7170NR3
13
RF Device Data
Freescale Semiconductor, Inc.
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
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respective owners.
E2010, 2014 Freescale Semiconductor, Inc.
How to Reach Us:
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Document Number: MRF8S7170N
Rev. 2, 2/2014
