2003. 3. 27 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1225D/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : fT=100MHz(Typ.).
Complementary to KTC2983D/L
MAXIMUM RATING (Ta=25 )
DPAK
DIM MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10M
0.90 0.1O
A
C
D
B
E
K
I
J
Q
H
FF
M
O
P
L
123
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10P
0.95 MAXQ
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -160 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -1.5 A
Base Current IB -0.3 A
Collector Power
Dissipation
Ta=25 PC
1.0
W
Tc=25 10
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -1.0 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1.0 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -160 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -5.0 - - V
DC Current Gain hFE(Note) VCE=-5V, IC=-100mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -1.5 V
Base-Emitter Voltage VBE VCE=-5V, IC=-500mA -- -1.0 V
Transition Frequency fTVCE=-10V, IC=-100mA - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 30 - pF
Note : hFE Classification O:70~140, Y:120~240
DIM MILLIMETERS
IPAK
D
B
Q
E
H
F F
C
A
P
L
I
J
123
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.5 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K 2.0 0.2
K
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
2003. 3. 27 2/3
KTA1225D/L
Revision No : 2
Pc - Ta
AMBIENT TEMPERATURE Ta ( C)
020 40
C
0
COLLECTOR POWER DISSIPAZTION P (W)
20
f - I
TC
C
COLLECTOR CURRENT I (A)
-0.005
300
T
0
TRANSITION FREQUENCY f (MHz)
30
-0.01 -0.03 -0.1 -0.3 -1
50
100
COMMON EMITTER
V =-10V
Tc=25 C
CE
60 80 100 120 140 160 180
5
10
25
15
30
I - V
CCE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0-2-4-6
-0.2
C
0
COLLECTOR CURRENT I (A)
V - I
CE(sat) C
C
COLLECTOR CURRENT I (A)
-1 -3-0.003
-1
CE(sat)
COLLECTOR-EMITTER SATURATION
10
DC CURRENT GAIN hFE
300
-0.003 -3-1
COLLECTOR CURRENT I (A)
C
CFE
h - I
-0.2
COLLECTOR CURRENT I (A)
0
C
-0.20
BASE-EMITTER VOLTAGE V (V)
BE
BE
C
I - V
-8 -10 -12 -14 -16
-0.4
-0.6
-0.8
-1.0
COMMON
EMITTER
Tc=25 C
I =-2mA
B
-4mA
-6mA
-8mA
-12mA
-20mA
0mA
-0.01 -0.03 -0.1 -0.3
30
50
100
COMMON EMITTER
V =-5V
CE
Tc=100 C
Tc=25 C
Tc=-25 C
VOLTAGE V (V)
-0.01 -0.03 -0.1 -0.3
-0.03
-0.05
-0.1
-0.3
-0.5
COMMON EMITTER
I /I =10
CB
Tc=100 C
Tc=25 C
Tc=-25 C
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4
-0.4
-0.6
-0.8
-1.0
COMMON
V =-5V
CE
EMITTER
Tc=100 C
Tc=25 C
Tc=-25 C
Tc=25 C
Ta=25 C
1
2
1
2
2003. 3. 27 3/3
KTA1225D/L
Revision No : 2
COLLECTOR CURRENT I (A)
3
C
0.02
30105
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
50 100 300
0.05
0.1
0.3
0.5
1
5
I MAX(PULSED) *
C
C
I MAX
(CONTINUOUS)
1ms *
10ms *
100ms *
1.5
* SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
DC OPERATION
Tc=25 C
