2003. 3. 27 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1225D/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : fT=100MHz(Typ.).
Complementary to KTC2983D/L
MAXIMUM RATING (Ta=25 )
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -160 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -1.5 A
Base Current IB -0.3 A
Collector Power
Dissipation
Ta=25 PC
1.0
W
Tc=25 10
Junction Temperature Tj150
Storage Temperature Range Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -1.0 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1.0 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -160 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -5.0 - - V
DC Current Gain hFE(Note) VCE=-5V, IC=-100mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -1.5 V
Base-Emitter Voltage VBE VCE=-5V, IC=-500mA -- -1.0 V
Transition Frequency fTVCE=-10V, IC=-100mA - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 30 - pF
Note : hFE Classification O:70~140, Y:120~240
1. BASE
2. COLLECTOR
3. EMITTER