SEMICONDUCTOR KTA1225D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES A High Transition Frequency : fT=100MHz(Typ.). I C J SYMBOL RATING UNIT Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO -5 V Collector Current IC -1.5 A Base Current IB -0.3 A Ta=25 Dissipation Tc=25 Junction Temperature PC M P F 1 L F 2 3 MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 0.2 1.10 + _ 0.2 2.70 + _ 0.1 2.30 + 1.00 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 2.00 + 0.20 _ 0.10 0.50 + _ 0.10 0.91+ _ 0.1 0.90 + _ 0.10 1.00 + 0.95 MAX 1. BASE 2. COLLECTOR 3. EMITTER DPAK W 10 Tj 150 Tstg -55 150 I A C J K Q B Storage Temperature Range 1.0 H DIM A B C D E F H I J K L M O P Q D CHARACTERISTIC Collector Power K ) O MAXIMUM RATING (Ta=25 E Q B D Complementary to KTC2983D/L P H E G F 1 F 2 L 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 0.2 5.0 + _ 0.2 1.10 + _ 0.6 9.50 + _ 0.1 2.30 + _ 0.1 0.76 + 1.0 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.2 2.0 + _ 0.1 0.50 + _ 0.1 1.0 + 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER IPAK ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -1.0 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1.0 A Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -160 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -5.0 - - V DC Current Gain hFE(Note) VCE=-5V, IC=-100mA 70 - 240 VCE(sat) IC=-500mA, IB=-50mA - - -1.5 V Base-Emitter Voltage VBE VCE=-5V, IC=-500mA - - -1.0 V Transition Frequency fT VCE=-10V, IC=-100mA - 100 - MHz VCB=-10V, IE=0, f=1MHz - 30 - pF Collector-Emitter Saturation Voltage Collector Output Capacitance Cob Note : hFE Classification O:70~140, Y:120~240 2003. 3. 27 Revision No : 2 1/3 KTA1225D/L I C - VCE hFE - I C -0.6 Tc=100 C I B =-2mA -0.2 0mA 0 -2 -4 -6 -8 -10 -12 -14 Tc=-25 C 50 30 COMMON EMITTER VCE =-5V -0.01 -0.03 -0.1 -1 -0.3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C I C - VBE -1.0 I C /I B =10 -0.3 C 100 Tc= -0.1 Tc=25 C Tc=-25 C -0.05 -0.03 -0.003 -0.01 -0.03 -0.1 -1 -0.3 -0.6 -0.4 -0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE VBE (V) f T - IC Pc - Ta 300 100 50 30 COMMON EMITTER VCE =-10V Tc=25 C 0 -0.005 -0.01 -0.8 0 -3 COMMON EMITTER VCE =-5V Tc=100 C COLLECTOR CURRENT IC (A) COMMON EMITTER -0.03 -0.1 -0.3 Revision No : 2 -1 -3 Tc=25 C Tc=-25 C -1 -0.5 Tc=25 C 100 10 -0.003 -16 COLLECTOR POWER DISSIPAZTION PC (W) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -6mA COLLECTOR CURRENT I C (A) 2003. 3. 27 300 COMMON EMITTER Tc=25 C -4mA -0.4 0 TRANSITION FREQUENCY f T (MHz) -8m DC CURRENT GAIN h FE -0.8 A A 2m -1 -20 mA COLLECTOR CURRENT I C (A) -1.0 30 -1.4 1 Tc=25 C 25 2 Ta=25 C 20 15 1 10 5 0 2 0 20 40 60 80 100 120 140 160 180 AMBIENT TEMPERATURE Ta ( C) 2/3 KTA1225D/L SAFE OPERATING AREA 5 I C MAX(PULSED) * I C MAX (CONTINUOUS) 1.5 1 DC OP Tc ER =2 AT 5 I C ON 0.5 0.3 0.1 s* 1m * ms 10 s* 0m 10 COLLECTOR CURRENT I C (A) 3 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 0.05 0.02 5 10 30 50 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 2 3/3