MA44600 Series Step Recovery Diodes 30 Description The MA44600 series of Step Recovery diodes is designed for use in low and moderate power multipliers with output frequencies of up to 20 GHz. These SRD diodes generate harmonics by storing a charge as the diode is driven to forward conductance by the positive voltage of the input signal. When the signal reverses polarity, this charge is extracted. The SRD diode will appear as a low impedance current source until all the charge is extracted, then it will snap" to a higher impedance. This causes a voltage pulse to form in the impulse circuit of the multiplier. SRD diodes make excellent high order multipliers such as comb generators. They are also useful as efficient moderate power X2- X4 multipliers. The MA44750 series of higher power step recovery multiplier diodes are higher voltage SRD diodes for use in multipliers with output frequencies of 200 MHz to ~8 GHz, where higher output power of 5 to 50 watts is required. These diodes are normally useful in multipliers with multiplication ratios of 2 to 6 times. Features @ LOW TRANSITION TIMES @ TIGHT CAPACITANCE RANGES @ HIGH VOLTAGE AND LOW THERMAL RESISTANCE FOR HIGHER INPUT POWER Applications High Order Narrow Band Moderate Power Multipliers (MA44600 series) Comb Generators (MA43592, MA43543) High Power Narrow Band Multipliers (2-6 times) (MA44750 series) High Power Circuit Tested Multipliers (MA43000 series) M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 265MA44600 Series Step Recovery Diodes Specifications @ Ta = 25C Voltage2 Junction? Minimum tae Breakdown Capacitance Lifetime snag Time (ps) Model! Minimum Range (Cj) 10 mA/6 mA Number Vb (Volts) Min./Max. (pF) TI (ns) Nominal Max. MA44611A 15 .2-.3 5 50 100 MA44611B 15 3-4 5 50 100 MA44611C 16 4.5 5 50 100 MA44612A 15 5.7 5 50 100 MA44612B 15 7-9 5 50 100 MA44612C 16 9-1.1 5 50 100 MA44612D 15 4.1-1.5 5 50 100 MA44621A 20 2-.3 7 50 100 MA44621B 20 3-.4 7 50 100 MA44621C 20 4-5 7 50 100 MA44622A 20 -.7 7 50 100 MA44622B 20 7-9 7 50 100 MA44622C 20 9-1-1 7 50 100 MA44622D 20 1.1-1.5 7 50 100 MA44631A 30 3-5 8 70 100 MA44631B 30 5-7 8 70 100 MA44631C 30 7-9 8 70 100 MA44631D 30 .9-1.1 8 70 100 MA44632A 30 5.7 8 70 120 MA44632B 30 7-9 8 -70 120 MA44632C 30 9-1.1 8 70 120 MA44632D 30 1.1-1.5 8 70 120 MA44641A 40 -4-.6 12 90 150 MA44641B 40 .6-.8 12 90 150 MA44641C 40 -8-1.1 12 90 150 MA44641D 40 1.1-1.5 12 90 150 MA44642A 40 5-7 12 150 200 MA44642B 40 7-9 12 150 200 MA44642C 40 .9-1.1 12 150 200 MA44642D 40 1.1-1.5 12 150 200 MA44643A 40 7-9 12 250 300 MA44643B 40 9-1.1 12 250 300 MA44643C 40 1.1-1.5 12 250 300 MA44643D 40 1.5-2.0 12 250 300 MA44652A 50 5-7 15 150 200 MA44652B 50 7-9 15 150 200 MA44652C 50 9-11 15 150 200 MA44652D 50 1.1-1.5 15 150 200 MA44653A 50 7-9 15 250 300 MA44653B 50 9-1.1 15 250 300 MA44653C 50 1.1-1.5 15 250 300 MA44653D 50 1.5-2.0 15 250 300 MA44663A 60 7-9 20 250 300 MA44663B 60 -9-1.1 20 250 300 MA44663C 60 1.1-1.5 20 250 300 MA44663D 60 1.5-2.0 20 250 300 *The nominal chip size for the MA44600 series is 15 mils. NOTES 1. When ordering, specify the desired case styie by adding the case designa- 3. Junction capacitance is measured at a reverse voltage of 6 voits and a fre- tion as a suffix to the model number. Case styles for the MA44600 series quency of 1 MHz. are 30, 31, 91, 92, 93, 114 and 113. To order in chip form, add the suffix 4. Transition time is measured between 20% and 80% points on the voitage C to the model number. recovery trace. These values are guaranteed for the A and B capacitance 2. Breakdown voltage (Vp) is measured at a reverse bias current of 10 pA. tanges only. Test conditions are +10 mA and 10 volts. M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 266MA44600 Series Step Recovery Diodes Specifications @ Ta = 25 C (Contd) HIGH POWER CIRCUIT TESTED STEP RECOVERY DIODES Min./Max.? Minimum Maximum Breakdown Output Input Output Input Voltage Model Case! Power Frequency Frequency Power Range, Vp Number Style (Watts) (GHz) (GHz) (Watts) (Volts) MA4B300 43 8.0 0.400 2.0 30 100-145 MA43000 103 4.0 0.333 2.0 15 85-105 MA43002 91 1.5 2.000 6.0 5 45-70 MA43004 91 0.3 3.300 13.0 2 30-45 Min./Max.? Min./Max. Junction Minor Carrier Maximum Maximum Capacitance Lifetime, TL Snap Time, Ts Thermal Model Range, Cj 10 mA/6 mA ~10V/10 mA Resistance, jc Number (pF) (ns) (ps) (c/w) MA4B300 5.00-8.00 300-800 750 7 MA43000 3.00-4.50 250-500 600 12 MA43002 1.60-2.40 75-225 250 25 MA43004 0.45-0.85 20-50 150 45 NOTES 1. The standard case styles are indicated for each model number. Other case styles are available. Consult the factory for information. 2. Breakdown voltage is measured at reverse bias current of 10 uA. MA44750 SERIES HIGH POWER STEP RECOVERY MULTIPLIER DIODES 3. Junction capacitance is measured at a reverse bias of 6 volts and a frequency of 1 MHz. Maximum iz Minimums Min./Max. Maximum Transition Output? Breakdown Junction Thermal Time, Ts Frequency Model! Case Voltage, Vp | Capacitance, Cj Resistance -10V/10 mA Range Number Style (Volts) (pF) (c/w) (ps) (GHz) MA44750 56 180 8.0-12.0 8 3000 0.2-0.5 MA44751 56 160 5.0-8.0 8 2000 0.5-1.0 MA44752 56 120 3.0-5.0 10 1500 1.0-2.0 MA44753 30 100 1.5-3.0 12 1000 2.0-4.0 MA44754 30 80 1.0-1.5 15 750 4.0-8.0 NOMINAL CHARACTERISTICS Minor Carrier Lifetime, TL Model Output Power 3. 4 10 mA/6 mA X3 Efficiency Chip Size Number (Watts) (ns) (%) (mils) MA44750 60 500 65 65 MA44751 20 400 60 50 MA44752 10 250 55 30 MA44753 8 150 50 20 MA44754 6 70 45 20 NOTES . Standard case styles are listed for each model number. For other case styles available, consult the factory. These diodes can be supplied in chip form. To order in chip form, add the suffix C to the model number. This is an operable output frequency and does not imply instantaneous bandwidth. Contact the factory. Nominal case capacitance are given with the case . Characteristic values are based on performance tests and include circuit style outline drawings. losses amounting to about 1.5 dB. For special circuits, factors other than 7. These are nominal values for narrow band circuits within the suggested the diode may cause variations from the values shawn. Contact the factory frequency range and are to be used as guidelines in circuit designs. These before using this information for equipment design. values can vary substantially depending on the multiplier circuit design. . These are nominal values at the midpoint of the specified frequency range. These diodes are specifically designed for multiplication orders from 2 to 6. The MA44750 series of diodes can be operated at full efficiency over a broad range of drive power, 5. Breakdown voltage is measured at a reverse current of 10 yA. 6. Junction capacitance is measured at 1 MHz and - 6 volts. The nominal tolerance is + 10%, but + 3% control is available at a nominal charge. fs a > 800-366-2266 267 M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 aMA44600 Series Step Recovery Diodes Specifications @ Ta = 25 C (Contd) HIGH ORDER SRD VARACTORS FOR USE IN COMB GENERATION Min./Max. Min./Max.3 Min./Max.* Minor Maximum? | Breakdown Junction Carrier Maximum Maximum Nominal? Input Voltage Capacitance | Lifetime, TL | Snap Time, Tg | Thermal Output Model Case! Power Range, Vb Cj Range Range 10V/10 mA | Resistance | Frequency Number Style (Watts) (Volts) (pF) (ps) (ps) je (C/W) (GHz) MA43592 30 1.0 25-40 0.2-0.30 9-27 90 1-12 MA43543 93 1.5 20-50 0.2-0.55 10-25 60 2-20 NOTES available case styles, consul the factory N taneous bandwidth. es) . The standard case styles are indicated for each model number. For other This is an operable output frequency range and does not imply instan- . Breakdown voltage is measured at a reverse bias voitage of 10 pA 4. Junction capacitance is measured at a reverse bias voltage of 6 volts and a frequency of 1 MHz. MAXIMUM RATINGS Temperature Range Operating Range Storage Range Case Styles -65 C to + 200 C -65 C to + 200C ENVIRONMENTAL PERFORMANCE The MA44600 series of diodes is capable of meeting the tests dictated by the methods and procedures of the latest revisions of MIL-S-19500, MIL-STD-202 and MIL-STD-750 which specify mechanical, electrical, thermal and other en- vironmental tests common to semiconductor products. _} 30 43 I | _ _ 91 93 M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 268