1N5711 and 1N6263 Small-Signal Diode Schottky Diodes Features For general purpose applications Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the MiniMELF case with type designation LL5711 and LL6263. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics (Ratings at 25oC ambient temperature unless otherwise specified.) Parameter 1N5711 1N6263 Peak inverse voltage Power dissipation (Infinite heatsink) Symbol Value Unit VRRM 70 60 Volts Ptot Maximum single cycle surge 10 us square wave IFSM Thermal resistance junction to ambient air RJA Junction temperature Tj Storage temperature range TS 400 (1) mW 2.0 0.3 125 Amps (1) o (1) -55 to +150 (1) C/mW o C o C Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Symbol Test Condition Min. Typ. Max. Unit V(BR)R IR=10uA 70 60 - - Volts IR VR=50V - - 200 nA Forward voltage drop VF IF=1mA IF=15mA - - 0.41 1.0 Volt Junction capacitance Ctot VR=0V, f=1MHz - - 2.2 pF trr IF=IR=5mA, recovery to 0.1IR - - 1 ns Reverse breakdown voltage Leakage current Reverse recovery time Notes: 1N5711 1N6263 1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. 673 RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted) 674