ataDlacinahceM
serutaeF
673
scitsiretcarahClamrehTdnasgnitaRmumixaM
(Ratings at 25oC ambient temperature unless otherwise specified.)
For general purpose applications
Metal-on-silicon Schottky barrier device which is protected by a
PN junction guard ring. The low forward voltage drop and fast
switching make it ideal for protection of MOS devices, steering,
biasing and coupling diodes for fast switching and low logic
level applications.
This diode is also available in the MiniMELF case with type
designation LL5711 and LL6263.
Case: DO-35 Glass Case
Weight: approx. 0.13g
3626N1dna1175N1
edoiDlangiS-llamS sedoiDykttohcS
retemaraPlobmySeulaVtinU
egatlovesrevnikaeP 1175N1 3626N1 V
MRR
0706 stloV
)knistaehetinifnI(noitapissidrewoPP
tot
004
)1(
Wm
01egruselcycelgnismumixaM uevawerauqssI
MSF
0.2spmA
riatneibmaotnoitcnujecnatsiserlamrehTR
θAJ
3.0
)1(o
Wm/C
erutarepmetnoitcnuJT
j
521
)1(o
C
egnarerutarepmetegarotST
S
051+ot55-
)1(o
C
scitsiretcarahClacirtcelE
(TJ=25oC unless otherwise noted.)
retemaraPlobmySnoitidnoCtseT.niM.pyT.xaMtinU
egatlovnwodkaerbesreveR 1175N1 3626N1 V
R)RB(
I
R
01= uA0706 -
--
-stloV
tnerrucegakaeLI
R
V
R
V05=--002 nA
pordegatlovdrawroFV
F
I
F
Am1=
I
F
Am51= -
--
-14.0 0.1 tloV
ecnaticapacnoitcnuJC
tot
V
R
zHM1=f,V0=--2.2 pF
emityrevoceresreveRt
rr
I
F
I=
R
,Am5= I1.0otyrevocer
R
--1
ns
Notes: 1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.
674
SEVRUCCITSIRETCARAHCDNASGNITAR
(TA = 25oC unless otherwise noted)
