T TRF530,531 D84DL2,K2 14.0 AMPERES 100, 60 VOLTS RDS(ON) = 0.18 0 SOWERMOS FET FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear N-CHANNEL CASE STYLE T0-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 404(10,26) 11612: 95} transfer characteristics makes it well suited for many linear psoas +" THO. 7e) ee a ss applications such as audio amplifiers and servo motors. GC z +7-\-f / - .265(6.73) Features J CF as . reweGfarune oge oye . eat POINT e i ; Polysilicon gate Improved stability and reliability 4809604 + 5510.00) . -220(5.59) e No secondary breakdown Excellent ruggedness | 4 . ; + 130(3.3) Lg ,006(0.15) e Ultra-fast switching Independent of temperature A a + POHO.028) TERM.1 Voltage controlled High transconductance reRm2 ww . . . . HY Gaeta) e Low input capacitance Reduced drive requirement TERM3~ a . 03310.84) e105267) #4 103(2.72 e Excellent thermal stability Ease of paralleling 0270.63) pe (2.44) mo Me Sara UNIT TYPE JTEAM.UTERM.2) TERM. TAB POWER MOS FET|T0-220-AB} GATE | GRAIN|SOURCE{ GRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF530/D84DL2 IRF531/D84DK2 UNITS Drain-Source Voltage Vpss 100 60 Volts Drain-Gate Voltage, Res = IMO Voar 100 60 Voits Continuous Drain Current @ To = 25C Ip 14 14 A @ Tc = 100C 9 9 A Pulsed Drain Current tom 56 56 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 75 75 Watts Derate Above 25C 0.6 0.6 WwW/C Operating and Storage Junction Temperature Range Ty, TsteG -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Reic 1.67 1.67 C/W Thermal Resistance, Junction to Ambient Rea 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 181electrical characteristics (Tc = 25C) (unless otherwise specified) |. CHARACTERISTIC [syMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF530/D84DL2 BVpss 100 _ _ Volts (Vas = OV, Ip = 250 uA) IRF531/084DK2 60 _ - Zero Gate Voltage Drain Current lpss (Vps = Max Rating, Vag = OV, To = 25C) _ _ 250 uA (Vpg = Max Rating, * 0.8, Vag = OV, To = 125C) _ _ 1000 Gate Sour ee Current lass _ _ +500 nA on characteristics Gate Threshold Voltage To = 25C | VesctH) 2.0 _ 4.0 Volts (Vos = Vas: Ip = 250 nA) On-State Drain Current (Vag = 10V, Vs = 10V) ID(on) | 14.0 - A Static Drain-Source On-State Resistance (V@s = 10V, Ip = 8A) Rps(On) _ 0.15 0.18 Ohms Forward Transconductance (Vps = 10V, Ip = 8A) fs 3.2 4.0 _ mhos dynamic characteristics Input Capacitance Vas = OV Ciss - 650 800 pF Output Capacitance Vps = 25V Coss _ 240 500 pF Reverse Transfer Capacitance f=1MHz Crss - 55 150 pF switching characteristics Turn-on Delay Time Vps = 30V tdion) _ 15 _ ns Rise Time Ip = 8A, Vag = 15V tr _ 55 _ ns Turn-off Delay Time Roen = 500, Reg = 12.50 | taoft) _- 30 - ns Fall Time (Res equiv.) = 109) tt _ 10 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 14 A Pulsed Source Current Isom _ _ 56 A Diode Forward Voltage _ 1 2 it (To = 25C, Vag = OV, Is = 144) Vsp 0 Volts Reverse Recovery Time ter _ 210 _ ns (Ig = 14A, dlg/dt = 100A/usec, Tc = 125C) Qrr 1.4 _ uc *Pulse Test: Pulse width <= 300 ys, duty cycle = 2% 100 80 60 40 20 bh Onoe MAY BE LIMITED BY A ip, DRAIN CURRENT (AMPERES) nN 2g 99> -& awo LE Te = 25C IRFS30/D84DL2 0.1 1 2 4 6 810 20 40 60 80100 Vos. DRAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 1000 182 oN b Ff CONDITIONS: Fos(ONn CONDITIONS: Ip = 8.0 A, Vag = 10V V@s(TH) CONDITIONS: If = 2502A, Vos * Yas n & , NORMALIZED 5b 2 9 0 Veith) 2 a Rosion) ANO Vesrrm 9 2 Ny bh o 0 40 80 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rogion; AND Vasiri VS- TEMP. ~40 120 160