NTE100 (PNP) & NTE101 (NPN)
Germanium Complementary Transistors
Oscillator, Mixer for AM Radio,
Medium Speed Switch
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO 25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage (Note 1), VCEO
NTE100 24V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE101 25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
NTE100 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE101 25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
NTE100 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE101 300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current (NTE100 Only), IE100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation, PD150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 2.5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Collector Junction Temperature, TJ+85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Punch–through voltage.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Brteakdown Voltage
NTE100 V(BR)CBO IE = 0 IC = 20µA25 V
NTE101 IC = 100µA 25 V
Emitter–Base Breakdown Voltage
NTE100 V(BR)EBO IC = 0 IE = 20µA12 V
NTE101 IE = 100µA 25 V
Punch Through Voltage
NTE100 VPT VEBfl = 1V, Note 2 24 V
NTE101 25 V
Collector Cutoff Current
NTE100 ICBO IE = 0 VCB = 12V 1 5 µA
VCB = 12V, TA = +80°C 40 90 µA
NTE101 VCB = 25V 3 6 µA
Note 2. VPT is determined by measuring the Emitter–Base floating potential VEBfl. The Collector–
Base Voltage, VCB, is increased until VEBfl = 1 V; this value of VCB = (VPT + 1V). Care must
be taken not to exceed maximum Collector–Base Voltage specified under maximum ratings.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Emitter Cutoff Current
NTE100 IEBO IC = 0 VEB = 2.5V 1 2.5 µA
NTE101 VEB = 25V 2 6 µA
Static Forward Current Transfer Ratio
NTE100 hFE VCE = 0.15V, IC = 12mA 30 100
VCE = 0.20V, IC = 24mA 24 110
NTE101 VCE = 1V, IC = 10mA 20 100
VCE = 0.35V, IC = 200mA 10 100
BaseEmitter Voltage
NTE100 VBE IB = 0.4mA, IC = 12mA 0.26 0.35 V
IB = 1mA, IC = 24mA 0.30 0.40 V
NTE101 IB = 0.5mA, IC = 10mA 0.15 0.22 0.40 V
CollectorEmitter Saturation Voltage
NTE100 VCE(sat) IB = 0.4mA, IC = 12mA 0.08 0.15 V
IB = 1mA, IC = 24mA 0.08 0.20 V
NTE101 IB = 0.5mA, IC = 10mA 0.07 0.20 V
SmallSignal Forward Current Transfer Ratio
NTE100 hfe VCE = 6V IC = 1mA, f = 1kHz 135
NTE101 VCE = 5V 105
Output Capacitance
NTE100 Cob VCB = 6V IE = 0, f = 1MHz 9 20 pF
NTE101 VCB = 5V 14 20 pF
Switching Characteristics
Delay Time
NTE100 tdIC = 10mA, IB(1) = 1.3mA, 0.14 µs
NTE101 IB(2) = 0.7mA, VBE(off) = 0.8V,
RL = 1k0.07 µs
Rise Time tr
RL = 1k
0.20 µs
Storage Time
NTE100 ts0.38 µs
NTE101 0.70 µs
Fall Time
NTE100 tf0.19 µs
NTE101 0.40 µs
Stored Base Charge Qsb IB(1) = 1mA, IC = 10mA 800 1400 pcb
45°
.031 (.793)
.019 (0.5) Dia
Emitter Base
Collector
.352 (8.95) Dia Max
.320 (98.13) Dia Max
.250 (6.35)
Max
1.500 (38.1)
Min