2N3906 PNP EPITAXIAL PLANAR TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R201-028, C
ABSOLUTE MAXIMUM RATING ( TA=25°С, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -200 mA
Base Current IB -50 mA
Collector dissipation PC 625 mW
Junction Temperature TJ 125 °С
Operating Temperature TOPR -20 ~ +85 °С
Storage Temperature TSTG -40 ~ +150 °С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current ICE
V
CE=-30V, VEB=-3V -50 nA
Base Cut-Off Current IBL V
CE=-30V, VEB=-3V -50 nA
Collector-Base Breakdown Voltage VCBO I
C=-10μA, IE=0 -40 V
Collector-Emitter Breakdown Voltage VCEO I
C=-1mA, IB=0 (Note) -40 V
Emitter-Base Breakdown Voltage VEBO I
E=-10μA, IC=0 -6 V
DC Current Gain (Note)
hFE1 V
CE=-1V, IC=-0.1mA 60
hFE2 V
CE=-1V, IC=-1mA 80
hFE3 V
CE=-1V, IC=-10mA 100 300
hFE4 V
CE=-1V, IC=-50mA 60
hFE5 V
CE=-1V, IC=-100mA 30
Collector-Emitter Saturation Voltage
(Note)
VCE
SAT
1IC=-10mA, IB=-1mA -0.25 V
VCE
SAT
2IC=-50mA, IB=-5mA -0.4
Base-Emitter Saturation Voltage VBE
SAT
1IC=-10mA, IB=-1mA -0.65 -0.85 V
VBE
SAT
2IC=-50mA, IB=-5mA -0.95
Transition Voltage fT V
CE=-20V, IC=-10mA, f=100MHz 250 MHz
Output Capacitance COB V
CB=-5V, IE=0, f=1MHz 4.5 pF
Turn On Time tON V
CC=-3V, VBE=-0.5V, IC=-10mA, IB1=-1mA 70 ns
Turn Off Time tOFF I
B1=1B2=-1mA 300 ns
Note: Pulse test: PW<=300μs, Duty Cycle<=2%