1
MRF392MOTOROLA RF DEVICE DATA
The RF Line
Designed primarily for wideband large–signal output and driver amplifier
stages in the 30 to 500 MHz frequency range.
•Specified 28 Volt, 400 MHz Characteristics —
Output Power = 125 W
Typical Gain = 10 dB
Efficiency = 55% (Typ)
•Built–In Input Impedance Matching Networks for Broadband Operation
•Push–Pull Configuration Reduces Even Numbered Harmonics
•Gold Metallization System for High Reliability
•100% Tested for Load Mismatch
•Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
6
7
2
3
1, 4
5, 8
The MRF392 is two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a push–pull configuration.
PUSH–PULL TRANSISTORS
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 30 Vdc
Collector–Base Voltage VCBO 60 Vdc
Emitter–Base Voltage VEBO 4.0 Vdc
Collector Current — Continuous IC16 Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°CPD270
1.54 Watts
W/°C
Storage Temperature Range Tstg –65 to +150 °C
Junction Temperature TJ200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 0.65 °C/W
NOTE:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull
amplifier.
Order this document
by MRF392/D
SEMICONDUCTOR TECHNICAL DATA
125 W, 30 to 500 MHz
CONTROLLED “Q”
BROADBAND PUSH–PULL
RF POWER TRANSISTOR
NPN SILICON
CASE 744A–01, STYLE 1
Motorola, Inc. 1997
REV 8
MRF392
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 30 — — Vdc
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 — — Vdc
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc
Collector Cutof f Current (VCB = 30 Vdc, IE = 0) ICBO — — 5.0 mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 40 60 100 —
DYNAMIC CHARACTERISTICS (1)
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob —75 95 pF
FUNCTIONAL TESTS (2) — See Figure 1
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 125 W, f = 400 MHz) Gpe 8.0 10 — dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 125 W, f = 400 MHz) η50 55 — %
Load Mismatch
(VCC = 28 Vdc, Pout = 125 W, f = 400 MHz,
VSWR = 30:1, all phase angles)
ψNo Degradation in Output Power
NOTES:
1. Each transistor chip measured separately.
2. Both transistor chips operating in push–pull amplifier.
Figure 1. 400 MHz Test Fixture
D.U.T.
Z1 Z3
C9
C11
L5
Z4 Z5
L6
C16
C7C6C5C3
–
+ 28 V
L3
L4
C2
C1
Z1 Z3
Z6
Z4 Z5 Z6
C12 C13 C14 C15
B1 B2
L1
C17 C18 C19
C10
+
L2
C8
Z2
C4
Z2
C1, C2 — 240 pF, 100 Mil Chip Cap (ATC) or Equivalent
C3 — 3.6 pF, 100 Mil Chip Cap (ATC) or Equivalent
C4, C8 — 8.2 pF, 100 Mil Chip Cap (ATC) or Equivalent
C5, C6 — 20 pF, 100 Mil Chip Cap (ATC) or Equivalent
C7 — 18 pF, Mini Unelco or Equivalent
C9, C10 — 270 pF, 100 Mil Chip Cap (ATC) or Equivalent
C11, C12, C16, C17 — 470 pF 100 Mil Chip Cap (ATC) or Equivalent
C13, C18 — 680 pF Feedthru
C14, C19 — 0.1 µF Erie Redcap or Equivalent
C15 — 20 µF, 50 V
L1, L2 — 0.15 µH Molded Choke With Ferrite Bead
L3, L4 — 2–1/2 T urns #20 AWG, 0.200 ID
L5, L6 — 3–1/2 T urns #18 AWG, 0.200 ID
B1 — Balun, 50 Ω Semi–Rigid Coaxial Cable 86 Mil OD, 2″ L
B2 — Balun, 50 Ω Semi–Rigid Coaxial Cable 86 Mil OD, 2″ L
Z1 — Microstrip Line 270 Mil L x 125 Mil W
Z2 — Microstrip Line 375 Mil L x 125 Mil W
Z3 — Microstrip Line 280 Mil L x 125 Mil W
Z4 — Microstrip Line 300 Mil L x 125 Mil W
Z5 — Microstrip Line 350 Mil L x 125 Mil W
Z6 — Microstrip Line 365 Mil L x 125 Mil W
Board Material — 0.0625″ Teflon Fiberglass εr = 2.5 ± 0.05 1 oz. Cu.
Board Material — CLAD, Double Sided
3
MRF392MOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power
Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage
Figure 6. Series Equivalent Input/Output Impedance
P , OUTPUT POWER (WATTS)
out
80
Pin, INPUT POWER (WATTS)
0
04 8 12 16 20
VCC = 13.5 V
Pin = 10 W
VCC, SUPPLY VOLTAGE (VOLTS)
Pin = 14 W
f = 100 MHz
VCC = 28 V
225 MHz 400 MHz
225 MHz
500 MHz
400 MHz
P , OUTPUT POWER (WATTS)
out
160
Pin, INPUT POWER (WATTS)
0
140
120
100
80
05101520
25
60
40
20
VCC, SUPPLY VOLTAGE (VOLTS)
10 30
0
70
60
50
40
30
20
10
2 6 10 14 18
P , OUTPUT POWER (WATTS)
out
160
140
120
100
80
60
40
20
14 18 22 2612 16 20 24 2810 30
0
P , OUTPUT POWER (WATTS)
out
160
140
120
100
80
60
40
20
14 18 22 2612 16 20 24 28
f = 100 MHz
5 W
7 W
7 W
10 W
f = 225 MHz f = 400 MHz
Zin
ZOL*
225
VCC = 28 V, Pout = 125 W
f = 100 MHz
450
400
500
400
225
f = 100 MHz
Zo = 20
Ω
500
450
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage and frequency.
f
MHz Zin
OHMS ZOL*
OHMS
100
225
400
450
500
0.72 + j0.44
0.72 + j2.62
3.88 + j5.72
3.84 + j2.8
1.26 + j3.01
9.0 – j6.0
5.2 – j1.8
3.6 + j0.53
3.2 + j1.2
3.0 + j2.0
CAPACITIVE
REACTANCE
COMPONENT (–jX)
INDUCTIVE
REACTANCE
COMPONENT (+jX)
Zin & ZOL* are given
from base–to–base and
collector–to–collector respectively.
MRF392
4MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 744A–01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
STYLE 1:
PIN 1. EMITTER (COMMON)
2. COLLECTOR
3. COLLECTOR
4. EMITTER (COMMON)
5. EMITTER (COMMON)
6. BASE
7. BASE
8. EMITTER (COMMON)
–T–
M
K
K
L
G
F
V
Q
4 PL
2 PL
U4 PL
D4 PL
R
56 78
12 34
–B–
M
A
M
0.76 (0.030) B M
–A–
SEATING
PLANE
N
EC
J
H
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A22.60 23.11 0.890 0.910
B9.52 10.03 0.375 0.395
C6.65 7.16 0.262 0.282
D1.60 1.95 0.063 0.077
E2.94 3.40 0.116 0.134
F2.87 3.22 0.113 0.127
G16.51 BSC 0.650 BSC
H4.01 4.36 0.158 0.172
J0.07 0.15 0.003 0.006
K4.34 4.90 0.171 0.193
L12.45 12.95 0.490 0.510
M45 NOM 45 NOM
N1.051 11.02 0.414 0.434
Q3.04 3.35 0.120 0.132
R9.90 10.41 0.390 0.410
U1.02 1.27 0.040 0.050
V0.64 0.89 0.025 0.035
__
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MRF392/D
*MRF392/D*
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