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Document Number: 64847
S10-0720-Rev. C, 29-Mar-10
Vishay Siliconix
Si2305CDS
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 8 V
VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 9 mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 2.5
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.4 - 1 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 8 V, VGS = 0 V - 1 µA
VDS = - 8 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain CurrentaID(on) V
DS ≤ - 5 V, VGS = - 4.5 V - 10 A
Drain-Source On-State ResistanceaRDS(on)
VGS = - 4.5 V, ID = - 4.4 A 0.028 0.035
Ω
VGS = - 2.5 V, ID = - 3.8 A 0.039 0.048
VGS = - 1.8 V, ID = - 2 A 0.053 0.065
Forward Transconductanceagfs VDS = - 4 V, ID = - 4.4 A 17 S
Dynamicb
Input Capacitance Ciss
VDS = - 4 V, VGS = 0 V, f = 1 MHz
960
pFOutput Capacitance Coss 330
Reverse Transfer Capacitance Crss 300
Total Gate Charge QgVDS = - 4 V, VGS = - 8 V, ID = - 4.4 A 20 30
nC
Total Gate Charge Qg
VDS = - 4 V, VGS = - 4.5 V, ID = - 4.4 A
12 18
Gate-Source Charge Qgs 1.5
Gate-Drain Charge Qgd 3.1
Gate Resistance Rgf = 1 MHz 1 5.1 10.2 Ω
Tur n - O n D e l ay Time td(on)
VDD = - 4 V, RL = 1.1 Ω
ID ≅ - 3.5 A, VGEN = - 4.5 V, Rg = 1 Ω
20 30
ns
Rise Time tr20 30
Turn-Off Delay Time td(off) 40 60
Fall Time tf10 15
Tur n - O n D e l ay Time td(on)
VDD = - 4 V, RL = 1.1 Ω
ID ≅ - 3.5 A, VGEN = - 8 V, Rg = 1 Ω
10 15
Rise Time tr10 15
Turn-Off Delay Time td(off) 35 55
Fall Time tf10 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTC = 25 °C - 1.4 A
Pulse Diode Forward Current ISM - 20
Body Diode Voltage VSD IS = - 3.5 A, VGS = 0 V - 0.8 - 1.2 V
Body Diode Reverse Recovery Time trr
IF = - 3.5 A, dI/dt = 100 A/µs, TJ = 25 °C
35 55 ns
Body Diode Reverse Recovery Charge Qrr 14 25 nC
Reverse Recovery Fall Time ta16 ns
Reverse Recovery Rise Time tb19